JPWO2019202874A1 - 半導体レーザ駆動装置およびその製造方法 - Google Patents
半導体レーザ駆動装置およびその製造方法 Download PDFInfo
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- JPWO2019202874A1 JPWO2019202874A1 JP2020514012A JP2020514012A JPWO2019202874A1 JP WO2019202874 A1 JPWO2019202874 A1 JP WO2019202874A1 JP 2020514012 A JP2020514012 A JP 2020514012A JP 2020514012 A JP2020514012 A JP 2020514012A JP WO2019202874 A1 JPWO2019202874 A1 JP WO2019202874A1
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Abstract
Description
1.実施の形態(半導体レーザ駆動装置)
2.適用例(電子機器)
[半導体レーザ駆動装置]
図1は、本技術の実施の形態における半導体レーザ駆動装置10の上面図の一例を示す図である。
上述のように、半導体レーザ300とレーザドライバ200との間の接続においては、配線インダクタンスが問題となる。全ての導体には誘導成分があり、ToFシステムのような高周波領域では、極めて短いリード線のインダクタンスでも悪影響をおよぼすおそれがある。すなわち、高周波動作した際に、配線インダクタンスの影響によりレーザドライバ200から半導体レーザ300を駆動するための駆動波形が歪んでしまい、動作が不安定になるおそれがある。
IDC=0.0002L・(ln(2L/R)−0.75)
IDC=0.0002L・(ln(2L/(W+H))
+0.2235((W+H)/L)+0.5)
図6および図7は、本技術の実施の形態のレーザドライバ200の製造過程において銅ランドおよび銅配線層(RDL:Redistribution Layer)を加工する工程の一例を示す図である。
[電子機器]
図13は、本技術の実施の形態の適用例である電子機器800のシステム構成例を示す図である。
d=(c/4πf)×arctan{(Q3−Q4)/(Q1−Q2)}
(1)レーザドライバを内蔵する基板と、
前記基板の一方の面に実装された半導体レーザと、
前記レーザドライバと前記半導体レーザとを0.5ナノヘンリー以下の配線インダクタンスにより電気接続する接続配線と
を具備する半導体レーザ駆動装置。
(2)前記接続配線は、0.5ミリメートル以下の長さを備える
前記(1)に記載の半導体レーザ駆動装置。
(3)前記接続配線は、前記基板に設けられる接続ビアを介する
前記(1)または(2)に記載の半導体レーザ駆動装置。
(4)前記半導体レーザは、その一部が前記レーザドライバの上方に重ねて配置される
前記(1)から(3)のいずれかに記載の半導体レーザ駆動装置。
(5)前記半導体レーザは、その面積の50%以下の部分が前記レーザドライバの上方に重ねて配置される
前記(4)に記載の半導体レーザ駆動装置。
(6)前記基板は、前記半導体レーザが実装された位置においてサーマルビアを備える
前記(1)から(5)のいずれかに記載の半導体レーザ駆動装置。
(7)前記基板の前記一方の面において前記半導体レーザを含む領域を囲う外壁と、
前記外壁に囲まれた領域の上方を覆う拡散板と
をさらに具備する前記(1)から(6)のいずれかに記載の半導体レーザ駆動装置。
(8)前記基板の前記一方の面に実装されて前記半導体レーザから照射されたレーザ光の光強度を監視するフォトダイオードをさらに具備する前記(1)から(7)のいずれかに記載の半導体レーザ駆動装置。
(9)前記基板の前記一方の面とは反対の面において外部との接続端子をさらに具備する前記(1)から(8)のいずれかに記載の半導体レーザ駆動装置。
(10)前記接続端子は、半田ボール、銅コアボール、銅ピラーバンプ、および、ランドグリッドアレイの少なくとも何れか1つにより形成される
前記(9)に記載の半導体レーザ駆動装置。
(11)レーザドライバを内蔵する基板と、
前記基板の一方の面に実装された半導体レーザと、
前記レーザドライバと前記半導体レーザとを0.5ナノヘンリー以下の配線インダクタンスにより電気接続する接続配線と
を具備する電子機器。
(12)支持板の上面にレーザドライバを形成する手順と、
前記レーザドライバの接続配線を形成して前記レーザドライバを内蔵する基板を形成する手順と、
前記基板の一方の面に半導体レーザを実装して前記接続配線を介して前記レーザドライバと前記半導体レーザとを0.5ナノヘンリー以下の配線インダクタンスにより電気接続する接続配線を形成する手順と
を具備する半導体レーザ駆動装置の製造方法。
100 基板
101 接続ビア
102 サーマルビア
110 支持板
120 接着性樹脂層
130 ピーラブル銅箔
131 キャリア銅箔
132 極薄銅箔
140、180 ソルダーレジスト
150 配線パターン
161〜163 層間絶縁性樹脂
170〜172 ビアホール
200 レーザドライバ
210 I/Oパッド
220 保護絶縁層
230 表面保護膜
240 密着層/シード層
250 フォトレジスト
260 銅ランドおよび銅配線層(RDL)
290 ダイアタッチフィルム(DAF)
300 半導体レーザ
400 フォトダイオード
500 受動部品
600 側壁
700 拡散板
800 電子機器
801 筐体
810 撮像部
830 シャッタボタン
840 電源ボタン
850 制御部
860 記憶部
870 無線通信部
880 表示部
890 バッテリ
Claims (12)
- レーザドライバを内蔵する基板と、
前記基板の一方の面に実装された半導体レーザと、
前記レーザドライバと前記半導体レーザとを0.5ナノヘンリー以下の配線インダクタンスにより電気接続する接続配線と
を具備する半導体レーザ駆動装置。 - 前記接続配線は、0.5ミリメートル以下の長さを備える
請求項1記載の半導体レーザ駆動装置。 - 前記接続配線は、前記基板に設けられる接続ビアを介する
請求項1記載の半導体レーザ駆動装置。 - 前記半導体レーザは、その一部が前記レーザドライバの上方に重ねて配置される
請求項1記載の半導体レーザ駆動装置。 - 前記半導体レーザは、その面積の50%以下の部分が前記レーザドライバの上方に重ねて配置される
請求項4記載の半導体レーザ駆動装置。 - 前記基板は、前記半導体レーザが実装された位置においてサーマルビアを備える
請求項1記載の半導体レーザ駆動装置。 - 前記基板の前記一方の面において前記半導体レーザを含む領域を囲う外壁と、
前記外壁に囲まれた領域の上方を覆う拡散板と
をさらに具備する請求項1記載の半導体レーザ駆動装置。 - 前記基板の前記一方の面に実装されて前記半導体レーザから照射されたレーザ光の光強度を監視するフォトダイオードをさらに具備する請求項1記載の半導体レーザ駆動装置。
- 前記基板の前記一方の面とは反対の面において外部との接続端子をさらに具備する請求項1記載の半導体レーザ駆動装置。
- 前記接続端子は、半田ボール、銅コアボール、銅ピラーバンプ、および、ランドグリッドアレイの少なくとも何れか1つにより形成される
請求項9記載の半導体レーザ駆動装置。 - レーザドライバを内蔵する基板と、
前記基板の一方の面に実装された半導体レーザと、
前記レーザドライバと前記半導体レーザとを0.5ナノヘンリー以下の配線インダクタンスにより電気接続する接続配線と
を具備する電子機器。 - 支持板の上面にレーザドライバを形成する手順と、
前記レーザドライバの接続配線を形成して前記レーザドライバを内蔵する基板を形成する手順と、
前記基板の一方の面に半導体レーザを実装して前記接続配線を介して前記レーザドライバと前記半導体レーザとを0.5ナノヘンリー以下の配線インダクタンスにより電気接続する接続配線を形成する手順と
を具備する半導体レーザ駆動装置の製造方法。
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TWI784382B (zh) * | 2020-01-13 | 2022-11-21 | 日商新唐科技日本股份有限公司 | 半導體裝置 |
JP7521203B2 (ja) * | 2020-02-26 | 2024-07-24 | 富士フイルムビジネスイノベーション株式会社 | 発光装置、光学装置及び計測装置 |
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WO2019202874A1 (ja) | 2019-10-24 |
US11962123B2 (en) | 2024-04-16 |
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CN118472790A (zh) | 2024-08-09 |
CN112005455B (zh) | 2024-06-04 |
US20210143607A1 (en) | 2021-05-13 |
CN112005455A (zh) | 2020-11-27 |
KR102629637B1 (ko) | 2024-01-30 |
EP3783759A1 (en) | 2021-02-24 |
EP3783759A4 (en) | 2021-06-30 |
KR20220060447A (ko) | 2022-05-11 |
JP2023145742A (ja) | 2023-10-11 |
JP7499391B2 (ja) | 2024-06-13 |
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