JPWO2019093206A1 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 171
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 170
- 239000010703 silicon Substances 0.000 claims abstract description 168
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract description 111
- 229910021342 tungsten silicide Inorganic materials 0.000 claims abstract description 111
- 229910052751 metal Inorganic materials 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 79
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 79
- 239000010937 tungsten Substances 0.000 claims abstract description 78
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 12
- 150000001722 carbon compounds Chemical class 0.000 claims abstract description 7
- 150000002291 germanium compounds Chemical class 0.000 claims abstract description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 53
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 53
- 239000002994 raw material Substances 0.000 claims description 37
- 150000001875 compounds Chemical class 0.000 claims description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 229910052799 carbon Inorganic materials 0.000 claims description 24
- 239000002243 precursor Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- -1 tungsten nitride Chemical class 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 abstract description 67
- 238000010586 diagram Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 128
- 239000007789 gas Substances 0.000 description 62
- 238000010438 heat treatment Methods 0.000 description 28
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 23
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 23
- 230000000694 effects Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 13
- 229910021350 transition metal silicide Inorganic materials 0.000 description 9
- 150000003624 transition metals Chemical class 0.000 description 9
- 229910052723 transition metal Inorganic materials 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
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- 238000009792 diffusion process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- XRXPBLNWIMLYNO-UHFFFAOYSA-J tetrafluorotungsten Chemical compound F[W](F)(F)F XRXPBLNWIMLYNO-UHFFFAOYSA-J 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 150000003658 tungsten compounds Chemical class 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
(2) 前記金属電極が、タングステン、窒化タングステン、チタン、窒化チタン、タンタル、窒化タンタル、ニッケル、コバルト、モリブデンのうちの少なくとも1つ以上であることを特徴とする前記(1)に記載の半導体装置。
(3) 前記シリコンとゲルマニウムの化合物層は、(ゲルマニウム)/(シリコン+ゲルマニウム)の組成比が0より大で1以下であることを特徴とする前記(1)又は(2)に記載の半導体装置。
(4) 前記シリコンとカーボンの化合物層は、(カーボン)/(シリコン+カーボン)の組成比が0より大で0.5以下であることを特徴とする前記(1)乃至(3)のいずれか1項に記載の半導体装置。
(5) 前記第1の積層構造における前記シリコン層又はシリコンとカーボンの前記化合物層が、n型のキャリアタイプであり、前記第2の積層構造におけるシリコンとゲルマニウムの前記化合物層が、p型のキャリアタイプであることを特徴とする前記(1)乃至(4)のいずれか1項に記載の半導体装置。
(6) 前記第1及び第2の積層構造の少なくともいずれか一方の積層構造が、2つ以上並列する構造であって、該並列する構造の、中間位置に金属と酸化膜と半導体層の順で積層されたMOS構造を備えていることを特徴とする前記(1)乃至(5)のいずれか1項に記載の半導体装置。
(7) 複数の前記第1の積層構造及び複数の第2の積層構造が金属配線によって接続された、CMOS構造を備えることを特徴とする前記(1)乃至(6)のいずれか1項記載の半導体装置。
(8) タングステンの原料ガスとシリコンの原料ガスを気相中で化学反応させることにより、シリコン/タングステンの組成比が4より大で12以下の前駆体を気相中で作製した後に、前記前駆体を、シリコン層若しくはシリコンとカーボンの化合物層並びにシリコンとゲルマニウムの化合物層の上に堆積して、タングステンシリサイド膜を作製する工程と、金属電極を前記タングステンシリサイド膜上に作製する電極作製工程と、を備えることを特徴とする、前記(1)記載の半導体装置の製造方法。
(9) 前記電極作製工程は、前記タングステンの原料ガスと前記シリコンの原料ガスのうち少なくとも1つ以上の原料ガスを含む原料ガスを用いて、タングテン電極を前記タングステンシリサイド膜上に作製する工程であることを特徴とする、前記(8)記載の製造方法。
本発明の第1の実施形態の半導体装置について、図を参照して以下説明する。第1の積層構造がシリコン層を備えるCMOSの場合を、代表例として説明する。本実施形態のCMOSにおけるn型MOSのソース/ドレインの金属電極接触部は、金属電極、タングステンシリサイド膜、n型シリコン層の積層構造を備える。本実施形態のCMOSにおけるp型MOSのソース/ドレインの金属電極接触部は、金属電極、タングステンシリサイド膜、シリコンとゲルマニウムの化合物層(又はゲルマニウム層)の積層構造を備える。
本実施形態のCMOSの製造方法について、ソース/ドレインの金属電極接触部の構造の製造方法を中心に、以下説明する。以下に説明するソース/ドレインの金属電極接触部の構造及び電子障壁高さ調整のための処理以外は、通常のCMOSの製造方法を適宜採用することができる。
(工程1) ソース/ドレインの金属電極接触部の構造の形成の前段階として、n型MOS構造のためのn型シリコン層と、p型MOS構造のためのシリコンゲルマニウム層を形成する工程。
(工程2) n型MOS構造のためのn型シリコン層と、p型MOS構造のためのシリコンゲルマニウム層とに、タングステンシリサイド層を形成する工程。
(工程3) n型MOS構造のためのタングステンシリサイド層と、p型MOS構造のためのタングステンシリサイド層とに、金属電極を形成する工程。
(工程4) 電子障壁高さ調整のための熱処理工程。
第2の実施形態の半導体装置は、第1の実施形態における第1の積層構造のシリコン層に替えて、シリコンとカーボンの化合物層を用いた場合に係る。本実施形態のn型MOSにおいても、タングステンシリサイド膜がフェルミレベルのピンニング緩和を行い、シリコンとカーボンの化合物層に対する電子障壁高さを低減することができるので、第1の実施形態と同様の効果が得られる。シリコンとカーボンの化合物層はシリコンよりも高い融点を持っているので、熱処理を行ってもタングステンシリサイド膜とシリコンとカーボンの化合物層の界面での相互拡散は生じ難く、フェルミレベルのピンニング解除効果は熱処理工程後も維持される。不純物元素として、リン(P)、ヒソ(As)、アンチモン(Sb)などが入っていても第1の実施形態と同様の効果が得られる。
2、12 タングステンシリサイド膜
3、4、14 シリコン層
5、15 金属電極(ゲート)
6、16 酸化物
13 シリコンゲルマニウム層又はゲルマニウム層
Claims (9)
- 金属電極、タングステンシリサイド膜、並びにシリコン層若しくはシリコンとカーボンの化合物層の順で積層された第1の積層構造と、前記金属電極、前記タングステンシリサイド膜、及びシリコンとゲルマニウムの化合物層の順で積層された第2の積層構造とを備え、前記タングステンシリサイド膜のシリコン/タングステンの組成比が4より大で12以下であることを特徴とする半導体装置。
- 前記金属電極が、タングステン、窒化タングステン、チタン、窒化チタン、タンタル、窒化タンタル、ニッケル、コバルト、モリブデンのうちの少なくとも1つ以上であることを特徴とする請求項1に記載の半導体装置。
- 前記シリコンとゲルマニウムの化合物層は、(ゲルマニウム)/(シリコン+ゲルマニウム)の組成比が0より大で1以下であることを特徴とする請求項1又は2に記載の半導体装置。
- 前記シリコンとカーボンの化合物層は、(カーボン)/(シリコン+カーボン)の組成比が0より大で0.5以下であることを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。
- 前記第1の積層構造における前記シリコン層又はシリコンとカーボンの前記化合物層が、n型のキャリアタイプであり、前記第2の積層構造におけるシリコンとゲルマニウムの前記化合物層が、p型のキャリアタイプであることを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置。
- 前記第1及び第2の積層構造の少なくともいずれか一方の積層構造が、2つ以上並列する構造であって、該並列する構造の、中間位置に金属と酸化膜と半導体層の順で積層されたMOS構造を備えていることを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。
- 複数の前記第1の積層構造及び複数の第2の積層構造が金属配線によって接続された、CMOS構造を備えることを特徴とする請求項1乃至6のいずれか1項記載の半導体装置。
- タングステンの原料ガスとシリコンの原料ガスを気相中で化学反応させることにより、シリコン/タングステンの組成比が4より大で12以下の前駆体を気相中で作製した後に、前記前駆体を、シリコン層若しくはシリコンとカーボンの化合物層並びにシリコンとゲルマニウムの化合物層の上に堆積して、タングステンシリサイド膜を作製する工程と、
金属電極を前記タングステンシリサイド膜上に作製する電極作製工程と、
を備えることを特徴とする、請求項1記載の半導体装置の製造方法。 - 前記電極作製工程は、
前記タングステンの原料ガスと前記シリコンの原料ガスのうち少なくとも1つ以上の原料ガスを含む原料ガスを用いて、タングテン電極を前記タングステンシリサイド膜上に作製する工程であることを特徴とする、請求項8記載の製造方法。
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