JP2007318132A - シリサイド・コンタクトとその上のメタライゼーションとの間の接触抵抗を低減する方法及び構造体 - Google Patents
シリサイド・コンタクトとその上のメタライゼーションとの間の接触抵抗を低減する方法及び構造体 Download PDFInfo
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- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 73
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000001465 metallisation Methods 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 128
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000002184 metal Substances 0.000 claims abstract description 99
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims abstract description 63
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 230000005669 field effect Effects 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000010410 layer Substances 0.000 claims description 60
- 230000004888 barrier function Effects 0.000 claims description 46
- 238000009792 diffusion process Methods 0.000 claims description 31
- 239000011229 interlayer Substances 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- KYCKJHNVZCVOTJ-UHFFFAOYSA-N [GeH3-].[Si+4].[GeH3-].[GeH3-].[GeH3-] Chemical compound [GeH3-].[Si+4].[GeH3-].[GeH3-].[GeH3-] KYCKJHNVZCVOTJ-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 239000004020 conductor Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- -1 region Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005272 metallurgy Methods 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- FBOUIAKEJMZPQG-AWNIVKPZSA-N (1E)-1-(2,4-dichlorophenyl)-4,4-dimethyl-2-(1,2,4-triazol-1-yl)pent-1-en-3-ol Chemical compound C1=NC=NN1/C(C(O)C(C)(C)C)=C/C1=CC=C(Cl)C=C1Cl FBOUIAKEJMZPQG-AWNIVKPZSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910003217 Ni3Si Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004964 aerogel Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009867 copper metallurgy Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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Abstract
【解決手段】上に配置される少なくとも1つの電界効果トランジスタを含み、前記少なくとも1つの電界効果トランジスタに隣接して配置されるシリサイド・コンタクト領域16A,16B,16Cを含む、半導体基板12と、前記半導体基板上に配置され、前記少なくとも1つの電界効果トランジスタの上に延び、前記シリサイド・コンタクト領域を露出させるコンタクト開口部20を有する絶縁中間層18と、前記コンタクト開口部内の金属ゲルマニウム化物含有コンタクト材料24とを備える。
【選択図】図2
Description
その上に配置される少なくとも1つの電界効果トランジスタを含み、前述の少なくとも1つの電界効果トランジスタに隣接して配置されるシリサイド・コンタクト領域を含む半導体基板と、
前述の半導体基板上に配置され、前述の少なくとも1つの電界効果トランジスタの上に延び、前述のシリサイド・コンタクト領域を露出させるコンタクト開口部を有する、絶縁中間層と、
前述のコンタクト開口部内の金属ゲルマニウム化物含有コンタクト材料と、
を備える半導体構造体を提供する。
その上に配置される少なくとも1つの電界効果トランジスタを含む半導体基板と、
前述の半導体基板上に配置され、前述の少なくとも1つの電界効果トランジスタの上に延び、コンタクト開口部を有する、絶縁中間層と、
前述のコンタクト開放部内にあって、デバイス・コンタクトとして機能する下部と、その上のメタライゼーションへのコンタクトとして機能する上部とを有する、連続的な金属ゲルマニウム化物含有材料と、
を備える。
その上に配置される少なくとも1つの電界効果トランジスタを含む半導体基板を準備するステップと、
前述の半導体基板上に配置され、前述の少なくとも1つの電界効果トランジスタの上に延び、コンタクト開口部を有する、絶縁中間層を形成するステップと、
前述のコンタクト開口部内に金属ゲルマニウム化物含有コンタクト材料を形成するステップと、
を含む。
その上に配置される少なくとも1つの電界効果トランジスタを含み、前述の少なくとも1つの電界効果トランジスタに隣接して配置されるシリサイド・コンタクト領域を含む、半導体基板を準備するステップと、
前述の半導体基板上に配置され、前述の少なくとも1つの電界効果トランジスタの上に延び、前述のシリサイド・コンタクト領域を露出させるコンタクト開口部を有する、絶縁中間層を形成するステップと、
前述のコンタクト開口部内に金属シリサイド又は金属ゲルマニウム化物含有コンタクト材料を形成するステップとを含み、前述のコンタクト材料を形成する前述のステップは、約400℃又はそれ以下の温度までアニールするステップを含む。
12:半導体基板
14:電界効果トランジスタ
16:シリサイド・コンタクト領域
18:絶縁中間層(中間層誘電体)
20:コンタクト開口部
22:拡散障壁
24:金属ゲルマニウム化物含有コンタクト材料
Claims (17)
- その上に配置される少なくとも1つの電界効果トランジスタを含み、前記少なくとも1つの電界効果トランジスタに隣接して配置されるシリサイド・コンタクト領域を含む、半導体基板と、
前記半導体基板上に配置され、前記少なくとも1つの電界効果トランジスタの上に延び、前記シリサイド・コンタクト領域を露出させるコンタクト開口部を有する絶縁中間層と、
前記コンタクト開口部内の金属ゲルマニウム化物含有コンタクト材料と
を備える半導体構造体。 - 前記コンタクト開口部の少なくとも壁部上に配置され、前記金属ゲルマニウム化物含有コンタクト材料を前記シリサイド・コンタクト領域から分離する拡散障壁をさらに備える、請求項1に記載の半導体構造体。
- 前記金属ゲルマニウム化物含有コンタクト材料は、前記シリサイド・コンタクト領域と直接接触する、請求項1に記載の半導体構造体。
- 各々のコンタクト開口部の底部付近の領域は、コンタクト開口部/拡散障壁界面におけるショットキー障壁の高さを最小にするような原子種を含む、請求項2に記載の半導体構造体。
- 各々のコンタクト開口部の上部付近の領域は、コンタクト開口部/拡散障壁界面におけるショットキー障壁の高さを最小にするような原子種を含む、請求項2に記載の半導体構造体。
- 前記金属ゲルマニウム化物含有コンタクトは、金属ゲルマニウム化物合金又は金属シリコン・ゲルマニウム化物合金を含む、請求項1に記載の半導体構造体。
- 前記金属は、W、Cu、及びNiのうちの1つである、請求項6に記載の半導体構造体。
- その上に配置される少なくとも1つの電界効果トランジスタを含む半導体基板と、
前記半導体基板上に配置され、前記少なくとも1つの電界効果トランジスタの上に延び、コンタクト開口部を有する絶縁中間層と、
デバイス・コンタクトとして機能する下部と、上にあるメタライゼーションへのコンタクトとして機能する上部とを有する、前記コンタクト開口部内の連続的な金属ゲルマニウム化物含有材料と
を備える半導体構造体。 - 半導体構造体を製造する方法であって、
その上に配置される少なくとも1つの電界効果トランジスタを含む半導体基板を準備するステップと、
前記半導体基板上に配置され、前記少なくとも1つの電界効果トランジスタの上に延び、コンタクト開口部を有する絶縁中間層を形成するステップと、
前記コンタクト開口部内に金属ゲルマニウム化物含有コンタクト材料を形成するステップと
を含む方法。 - 前記金属ゲルマニウム化物含有コンタクト材料を形成する前記ステップの前に、前記コンタクト開口部の少なくとも壁部上に配置され、前記金属ゲルマニウム化物含有コンタクト材料を下にあるシリサイド・コンタクト領域から分離する拡散障壁を形成するステップをさらに含む、請求項9に記載の方法。
- 前記金属ゲルマニウム化物含有コンタクト材料は、下にあるシリサイド・コンタクト領域と直接接触する、請求項9に記載の方法。
- 前記金属ゲルマニウム化物含有コンタクト材料は、前記少なくとも1つの電界効果トランジスタのソース/ドレイン領域及び随意的にゲート領域へのコンタクトとして機能する下部と、上にあるメタライゼーションへのコンタクトとして機能する上部とを有する、請求項9に記載の方法。
- コンタクト開口部/拡散障壁界面におけるショットキー障壁の高さを最小にするような原子種を含む各々のコンタクト開口部の底部付近の領域を形成するステップをさらに含む、請求項9に記載の方法。
- コンタクト開口部/拡散障壁界面におけるショットキー障壁の高さを最小にするような原子種を含む各々のコンタクト開口部の上部付近の領域を形成するステップをさらに含む、請求項9に記載の方法。
- 前記金属ゲルマニウム化物含有材料を形成する前記ステップは、任意の順序で、金属層とGe含有材料を堆積させるステップと、随意的に障壁層を形成するステップと、前記金属層と前記Ge含有材料の間の反応を引き起こすようにアニールするステップと、未反応材料を除去するステップとを含む、請求項9に記載の方法。
- 前記アニールするステップは、400℃以下の温度で実施される、請求項15に記載の方法。
- その上に配置される少なくとも1つの電界効果トランジスタを含み、前記少なくとも1つの電界効果トランジスタに隣接して配置されるシリサイド・コンタクト領域を含む半導体基板を準備するステップと、
前記半導体基板上に配置され、前記少なくとも1つの電界効果トランジスタの上に延び、前記シリサイド・コンタクト領域を露出させるコンタクト開口部を有する、絶縁中間層を形成するステップと、
前記コンタクト開口部内に金属シリサイド又は金属ゲルマニウム化物含有コンタクト材料を形成するステップと
を含み、
前記コンタクト材料を形成する前記ステップは、400℃以下の温度まで加熱するステップを含む、
半導体構造体を製造する方法。
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