JPWO2019074083A1 - 量子ドットの製造方法 - Google Patents
量子ドットの製造方法 Download PDFInfo
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- JPWO2019074083A1 JPWO2019074083A1 JP2019502819A JP2019502819A JPWO2019074083A1 JP WO2019074083 A1 JPWO2019074083 A1 JP WO2019074083A1 JP 2019502819 A JP2019502819 A JP 2019502819A JP 2019502819 A JP2019502819 A JP 2019502819A JP WO2019074083 A1 JPWO2019074083 A1 JP WO2019074083A1
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- Prior art keywords
- quantum dot
- solution
- quantum
- added
- fluorescence
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- 239000002159 nanocrystal Substances 0.000 claims abstract description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 14
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- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 12
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- 239000011593 sulfur Substances 0.000 claims abstract description 10
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- 230000009466 transformation Effects 0.000 description 1
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 1
- PHYFQTYBJUILEZ-IUPFWZBJSA-N triolein Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CCCCCCCC)COC(=O)CCCCCCC\C=C/CCCCCCCC PHYFQTYBJUILEZ-IUPFWZBJSA-N 0.000 description 1
- FIQMHBFVRAXMOP-UHFFFAOYSA-N triphenylphosphane oxide Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)(=O)C1=CC=CC=C1 FIQMHBFVRAXMOP-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 229940102001 zinc bromide Drugs 0.000 description 1
- BOXSVZNGTQTENJ-UHFFFAOYSA-L zinc dibutyldithiocarbamate Chemical compound [Zn+2].CCCCN(C([S-])=S)CCCC.CCCCN(C([S-])=S)CCCC BOXSVZNGTQTENJ-UHFFFAOYSA-L 0.000 description 1
- 229940105125 zinc myristate Drugs 0.000 description 1
- 229940012185 zinc palmitate Drugs 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- GPYYEEJOMCKTPR-UHFFFAOYSA-L zinc;dodecanoate Chemical compound [Zn+2].CCCCCCCCCCCC([O-])=O.CCCCCCCCCCCC([O-])=O GPYYEEJOMCKTPR-UHFFFAOYSA-L 0.000 description 1
- GJAPSKMAVXDBIU-UHFFFAOYSA-L zinc;hexadecanoate Chemical compound [Zn+2].CCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCC([O-])=O GJAPSKMAVXDBIU-UHFFFAOYSA-L 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- GBFLQPIIIRJQLU-UHFFFAOYSA-L zinc;tetradecanoate Chemical compound [Zn+2].CCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCC([O-])=O GBFLQPIIIRJQLU-UHFFFAOYSA-L 0.000 description 1
- DUBNHZYBDBBJHD-UHFFFAOYSA-L ziram Chemical compound [Zn+2].CN(C)C([S-])=S.CN(C)C([S-])=S DUBNHZYBDBBJHD-UHFFFAOYSA-L 0.000 description 1
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Abstract
Description
脂肪族1級アミン系、オレイルアミン:C18H35NH2、ステアリル(オクタデシル)アミン:C18H37NH2、ドデシル(ラウリル)アミン:C12H25NH2、デシルアミン:C10H21NH2、オクチルアミン:C8H17NH2
脂肪酸、オレイン酸:C17H33COOH、ステアリン酸:C17H35COOH、パルミチン酸:C15H31COOH、ミリスチン酸:C13H27COOH、ラウリル(ドデカン)酸:C11H23COOH、デカン酸:C9H19COOH、オクタン酸:C7H15COOH
チオール系、オクタデカンチオール:C18H37SH、ヘキサンデカンチオール:C16H33SH、テトラデカンチオール:C14H29SH、ドデカンチオール:C12H25SH、デカンチオール:C10H21SH、オクタンチオール:C8H17SH
ホスフィン系、トリオクチルホスフィン:(C8H17)3P、トリフェニルホスフィン:(C6H5)3P、トリブチルホスフィン:(C4H9)3P
ホスフィンオキシド系、トリオクチルホスフィンオキシド:(C8H17)3P=O、トリフェニルホスフィンオキシド:(C6H5)3P=O、トリブチルホスフィンオキシド:(C4H9)3P=O
本発明では、カドミウムを含まない量子ドットを合成するにあたり以下の原料を用いた。
溶媒
オクタデセン:Aldrich株式会社製、出光興産株式会社製
オレイルアミン:花王株式会社製:ファーミン
オレイン酸:花王株式会社製:ルナックO−V
トリオクチルホスフィン:北興化学株式会社製
塩化亜鉛:Aldrich株式会社製、又はキシダ化学株式会社製
ヨウ化亜鉛:Aldrich株式会社製
酢酸亜鉛2水和物:生駒化学株式会社製
無水酢酸亜鉛:Aldrich株式会社製
セレン(4N:99.99%):新興化学株式会社製、又はAldrich株式会社製
硫黄:キシダ化学株式会社製
<測定機器>
蛍光分光計:日本分光株式会社製 F−2700
紫外−可視光分光光度計:日立株式会社製 V−770
量子収率測定装置:大塚電子株式会社製 QE−1100
X線回折装置(XRD):Bruker社製 D2 PHASER
走査線電子顕微鏡(SEM):日立株式会社製 SU9000
100mL反応容器に、アセチルアセトナト銅:Cu(acac)2 131mgと、ドデカンチオール:DDT 1.5mLと、オレイルアミン:OLAm 4.75mLと、オクタデセン:ODE 6.25mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、無水酢酸銅:Cu(OAc)2 36.3mgと、ドデカンチオール:DDT 0.3mLと、Se−DDT/OLAm溶液(0.5M)0.4mLと、オクタデセン:ODE 10mLを入れた。そして、不活性ガス(N2)雰囲気下、220℃で10分間、攪拌しつつ加熱した。得られた反応溶液(Cu2Se(S))を、室温まで冷却した。
100mL反応容器に、アセチルアセトナト銅:Cu(acac)2 131mgと、ドデカンチオール:DDT 1.5mLと、オレイルアミン:OLAm 4.75mLと、オクタデセン:ODE 6.25mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、オレイン酸銅のオクタデセン溶液(0.2M):Cu(OLAc)2−ODE 1.2mLと、Se−ODE溶液 3mLと、溶液ドデカンチオール:DDT 0.4mLと、オクタデセン:ODE 3mLを入れた。この溶液を200℃で60分間、攪拌しつつ加熱した。得られた反応溶液(Cu2SeS)を、室温まで冷却した。
300mL反応容器に、無水酢酸銅:Cu(OAc)2 543mgと、ドデカンチオール:DDT 9mLと、オレイルアミン:OLAm 28.5mLと、オクタデセン:ODE 37.5mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
300mL反応容器に、無水酢酸銅:Cu(OAc)2 543mgと、ドデカンチオール:DDT 9mLと、オレイルアミン:OLAm 9mLと、オクタデセン:ODE 57mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
300mL反応容器に、無水酢酸銅:Cu(OAc)2 546mgと、ドデカンチオール:DDT 9mLと、オレイルアミン:OLAm 9mLと、オクタデセン:ODE 57mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、無水酢酸銅:Cu(OAc)2 72.6mgと、オレイルアミン:OLAm 0.263mLと、オクタデセン:ODE 10mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、無水酢酸銅:Cu(OAc)2 182mgと、ドデカンチオール:DDT 3mLと、オレイルアミン:OLAm 9.5mLと、オクタデセン:ODE 12.5mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
実施例6の反応溶液に、ドデシルアミン:DDA 0.6mLを入れ、不活性ガス(N2)雰囲気下にて、220℃で5分間、攪拌しつつ加熱した。
実施例6の反応溶液100mLに、ドデシルアミン:DDA 1mLを入れ、不活性ガス(N2)雰囲気下にて、220℃で5分間、攪拌しつつ加熱した。
実施例5の反応溶液10mLに、エタノールを加え沈殿を発生させ、遠心分離を施して沈殿を回収し、その沈殿にODEを加えて分散させた。
実施例6の反応溶液12.5mLに、エタノールを加え沈殿を発生させ、遠心分離を施して沈殿を回収し、その沈殿にODEを加えて分散させた。
実施例7の反応溶液10mLに、エタノールを加え沈殿を発生させ、遠心分離を施して沈殿を回収し、その沈殿にODEを加えて分散させた。
実施例7の反応溶液10mLに、エタノールを加え沈殿を発生させ、遠心分離を施して沈殿を回収し、その沈殿にODEを加えて分散させた。
100mL反応容器に、オレイン酸亜鉛:Zn(OLAc)2−ODE溶液(0.4M)0.833mLと、Se−ODE溶液(0.1M)10mLを入れ、不活性ガス(N2)雰囲気下、280℃で35分間攪拌しつつ加熱した。
100mL反応容器に、Se−ODE溶液(0.1M)20mLを入れ、不活性ガス(N2)雰囲気下、260℃で3分間攪拌しつつ加熱した。
100mL反応容器に、無水酢酸銅:Cu(OAc)2 183mgと、オレイルアミン:OLAm 0.66mLと、オクタン酸 0.64mL、オクタデセン:ODE 8.7mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
100mL反応容器に、オクタン酸亜鉛:141mgと、オクタデセン:ODE 20mLを入れた。そして、不活性ガス(N2)雰囲気下で攪拌しながら加熱し、原料を溶解させた。
Claims (15)
- カドミウムを含まず、蛍光半値幅が、25nm以下であることを特徴とする量子ドット。
- 前記量子ドットは、亜鉛とセレン、或いは、亜鉛とセレンと硫黄とを含有するナノクリスタルであることを特徴とする請求項1に記載の量子ドット。
- 前記量子ドットは、前記ナノクリスタルをコアとし、前記コアの表面にシェルが被覆されたコアシェル構造を有することを特徴とする請求項2に記載の量子ドット。
- 蛍光波長が、410nm以上470nm以下の範囲であることを特徴とする請求項1から請求項3のいずれかに記載の量子ドット。
- 前記量子ドットの表面が配位子で覆われていることを特徴とする請求項1から請求項4のいずれかに記載の量子ドット。
- 前記配位子は、脂肪族アミン系、ホスフィン系、及び、脂肪族カルボン酸系の少なくともいずれか1種から選択されることを特徴とする請求項5に記載の量子ドット。
- 有機銅化合物、或いは、無機銅化合物と、有機カルコゲン化合物とから、前駆体としての銅カルコゲニドを合成し、銅カルコゲニド前駆体を用いて、カドミウムを含まない量子ドットを合成することを特徴とする量子ドットの製造方法。
- 前記銅カルゴゲニドからなる前駆体の銅と亜鉛とを金属交換することを特徴とする請求項7に記載の量子ドットの製造方法。
- 前記金属交換反応を、180℃以上280℃以下で行うことを特徴とする請求項8に記載の量子ドットの製造方法。
- 前記銅カルコゲニドを、140℃以上250℃以下の反応温度で合成することを特徴とする請求項7から請求項9のいずれかに記載の量子ドットの製造方法。
- 前記量子ドットは、亜鉛とセレン、或いは、亜鉛とセレンと硫黄とを含有するナノクリスタルであることを特徴とする請求項7から請求項10のいずれかに記載の量子ドットの製造方法。
- 請求項1から請求項6のいずれかに記載の量子ドット、或いは、請求項7ないし請求項11のいずれかに記載の量子ドットの製造方法で形成された量子ドットを含むことを特徴とする波長変換部材。
- 請求項1から請求項6のいずれかに記載の量子ドット、或いは、請求項7ないし請求項11のいずれかに記載の量子ドットの製造方法で形成された量子ドットを含むことを特徴とする照明部材。
- 請求項1から請求項6のいずれかに記載の量子ドット、或いは、請求項7ないし請求項11のいずれかに記載の量子ドットの製造方法で形成された量子ドットを含むことを特徴とするバックライト装置。
- 請求項1から請求項6のいずれかに記載の量子ドット、或いは、請求項7ないし請求項11のいずれかに記載の量子ドットの製造方法で形成された量子ドットを含むことを特徴とする表示装置。
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WO2020213097A1 (ja) * | 2019-04-17 | 2020-10-22 | シャープ株式会社 | 電界発光素子、表示装置、電界発光素子の製造方法、及び液体組成物 |
CN113039257B (zh) * | 2019-09-20 | 2024-04-26 | 凸版印刷株式会社 | 量子点及其制造方法 |
WO2021070858A1 (ja) * | 2019-10-09 | 2021-04-15 | Nsマテリアルズ株式会社 | 量子ドット、及び、その製造方法 |
JP7273992B2 (ja) | 2019-12-02 | 2023-05-15 | 信越化学工業株式会社 | 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法 |
US20230232647A1 (en) * | 2020-07-03 | 2023-07-20 | Sharp Kabushiki Kaisha | Quantum dot dispersion solution and production method for electroluminescent element using same |
CN111995998B (zh) * | 2020-09-07 | 2024-03-22 | 合肥福纳科技有限公司 | 金属量子点核壳异质结材料及其制备方法 |
US20240107792A1 (en) * | 2021-02-18 | 2024-03-28 | Sharp Kabushiki Kaisha | Electroluminescent element |
WO2023067691A1 (ja) * | 2021-10-19 | 2023-04-27 | シャープディスプレイテクノロジー株式会社 | 量子ドット層の形成方法、量子ドット層、光学素子、発光デバイス |
WO2024024298A1 (ja) * | 2022-07-29 | 2024-02-01 | 昭栄化学工業株式会社 | 赤外線吸収量子ドットおよび赤外線吸収量子ドットの製造方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002338961A (ja) * | 2001-02-07 | 2002-11-27 | Agfa Gevaert Nv | 銅でドーピングされたZnS粒子の製造 |
JP2006291175A (ja) * | 2005-03-17 | 2006-10-26 | National Institute Of Advanced Industrial & Technology | 半導体ナノ粒子を分散した青色発光蛍光体 |
WO2006120895A1 (ja) * | 2005-05-12 | 2006-11-16 | Idemitsu Kosan Co., Ltd. | 色変換材料組成物及びこれを含む色変換媒体 |
WO2007034877A1 (ja) * | 2005-09-22 | 2007-03-29 | National Institute Of Advanced Industrial Science And Technology | 半導体ナノ粒子分散ガラス微粒子及びその作製方法 |
WO2009034777A1 (ja) * | 2007-09-13 | 2009-03-19 | Konica Minolta Medical & Graphic, Inc. | 蛍光体ナノ粒子の製造方法、及びそれを用いて製造された蛍光体ナノ粒子 |
WO2016151933A1 (ja) * | 2015-03-23 | 2016-09-29 | コニカミノルタ株式会社 | 組成物及びそれを含有する光学機能性膜 |
JP2016177220A (ja) * | 2015-03-23 | 2016-10-06 | コニカミノルタ株式会社 | 色域拡大フィルム |
WO2017086362A1 (ja) * | 2015-11-20 | 2017-05-26 | Jsr株式会社 | ナノ粒子集合体及びその製造方法、ナノ粒子集合体組成物、波長変換層、並びにリガンド |
CN106753381A (zh) * | 2016-11-14 | 2017-05-31 | Tcl集团股份有限公司 | 一种ZnSexS1‑x合金量子点及其制备方法 |
US20180291268A1 (en) * | 2017-04-06 | 2018-10-11 | Samsung Display Co., Ltd. | Manufacturing method of quantum dot |
KR20180128540A (ko) * | 2017-05-23 | 2018-12-04 | 한국세라믹기술원 | 코어/쉘 다층구조 반도체 나노입자의 제조방법 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4404489B2 (ja) * | 1998-09-18 | 2010-01-27 | マサチューセッツ インスティテュート オブ テクノロジー | 水溶性蛍光半導体ナノ結晶 |
US6251303B1 (en) | 1998-09-18 | 2001-06-26 | Massachusetts Institute Of Technology | Water-soluble fluorescent nanocrystals |
JP2002053319A (ja) * | 2000-05-17 | 2002-02-19 | Mitsubishi Chemicals Corp | 硫化物シェルを有するカルコゲン化亜鉛半導体超微粒子 |
EP1590171B1 (en) | 2003-01-22 | 2011-06-08 | The Board Of Trustees Of The University Of Arkansas | Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same |
JP2007060889A (ja) | 2005-07-29 | 2007-03-08 | Yaskawa Electric Corp | 永久磁石形モータ |
JP2007169605A (ja) | 2005-11-24 | 2007-07-05 | National Institute Of Advanced Industrial & Technology | 蛍光体、及びその製造方法 |
US20100316797A1 (en) * | 2008-02-04 | 2010-12-16 | Ying Jackie Y | Forming glutathione-capped and metal-doped zinc selenide/zinc sulfide core-shell quantum dots in aqueous solution |
CN101831711A (zh) * | 2009-03-09 | 2010-09-15 | 苏州市长三角系统生物交叉科学研究院有限公司 | 一种水溶性ZnSe量子点的微波制备方法 |
US20110175054A1 (en) * | 2010-01-15 | 2011-07-21 | Xiaofan Ren | Device containing large-sized emitting colloidal nanocrystals |
CN103112885A (zh) * | 2012-12-12 | 2013-05-22 | 南京工业大学 | 铜基纳米太阳能电池材料的制备方法 |
US10160648B2 (en) * | 2013-07-01 | 2018-12-25 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. | Colloidal semiconductor metal chalcogenide nanostructures |
KR102110271B1 (ko) * | 2014-02-05 | 2020-05-14 | 삼성디스플레이 주식회사 | 양자점바 수납 용기 및 이를 포함하는 백라이트 유닛 |
US9790425B2 (en) * | 2014-04-18 | 2017-10-17 | Los Alamos National Security, Llc | Synthesis of quantum dots |
WO2017044597A1 (en) | 2015-09-09 | 2017-03-16 | Truskier Jonathan | Highly luminescent cadmium-free nanocrystals with blue emission |
CN105219380B (zh) * | 2015-10-20 | 2018-01-23 | 广东昭信光电科技有限公司 | 一种高质量胶质无镉量子点的合成方法 |
CN107017325B (zh) * | 2015-11-30 | 2020-06-23 | 隆达电子股份有限公司 | 量子点复合材料及其制造方法与应用 |
FR3050283B1 (fr) | 2016-04-15 | 2018-04-20 | Alessandro Manneschi | Detecteur d'objets ou de matieres non autorisees dissimules dans une chaussure |
CN106479481B (zh) | 2016-09-20 | 2019-04-30 | 纳晶科技股份有限公司 | ZnSe/III-V族/ZnSexS1-x或ZnSe/III-V族/ZnSe/ZnS量子点及其制备方法 |
CN106544003B (zh) | 2016-10-17 | 2019-12-10 | Tcl集团股份有限公司 | 核壳结构的CuInS2/ZnS纳米棒及其制备方法 |
CN107573923A (zh) * | 2017-09-04 | 2018-01-12 | 河南大学 | 一种核壳合金量子点及其制备方法 |
-
2018
- 2018-10-12 CN CN201880065902.XA patent/CN111201305B/zh active Active
- 2018-10-12 WO PCT/JP2018/038038 patent/WO2019074083A1/ja unknown
- 2018-10-12 TW TW107136067A patent/TWI720352B/zh active
- 2018-10-12 AU AU2018348597A patent/AU2018348597A1/en not_active Abandoned
- 2018-10-12 KR KR1020247013477A patent/KR20240058978A/ko active Application Filing
- 2018-10-12 KR KR1020207009813A patent/KR102661236B1/ko active IP Right Grant
- 2018-10-12 JP JP2019502819A patent/JP6690886B2/ja active Active
- 2018-10-12 CN CN202110710825.2A patent/CN113583677A/zh active Pending
- 2018-10-12 US US16/754,578 patent/US11124703B2/en active Active
- 2018-10-12 TW TW110102536A patent/TWI756032B/zh active
- 2018-10-12 EP EP23171034.4A patent/EP4223855A1/en active Pending
- 2018-10-12 EP EP18865758.9A patent/EP3696248B1/en active Active
-
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- 2019-02-05 JP JP2019018900A patent/JP7283733B2/ja active Active
-
2021
- 2021-08-18 US US17/405,687 patent/US11845890B2/en active Active
-
2023
- 2023-05-11 JP JP2023078630A patent/JP7473050B2/ja active Active
- 2023-11-03 US US18/386,884 patent/US20240124774A1/en active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002338961A (ja) * | 2001-02-07 | 2002-11-27 | Agfa Gevaert Nv | 銅でドーピングされたZnS粒子の製造 |
JP2006291175A (ja) * | 2005-03-17 | 2006-10-26 | National Institute Of Advanced Industrial & Technology | 半導体ナノ粒子を分散した青色発光蛍光体 |
WO2006120895A1 (ja) * | 2005-05-12 | 2006-11-16 | Idemitsu Kosan Co., Ltd. | 色変換材料組成物及びこれを含む色変換媒体 |
WO2007034877A1 (ja) * | 2005-09-22 | 2007-03-29 | National Institute Of Advanced Industrial Science And Technology | 半導体ナノ粒子分散ガラス微粒子及びその作製方法 |
WO2009034777A1 (ja) * | 2007-09-13 | 2009-03-19 | Konica Minolta Medical & Graphic, Inc. | 蛍光体ナノ粒子の製造方法、及びそれを用いて製造された蛍光体ナノ粒子 |
WO2016151933A1 (ja) * | 2015-03-23 | 2016-09-29 | コニカミノルタ株式会社 | 組成物及びそれを含有する光学機能性膜 |
JP2016177220A (ja) * | 2015-03-23 | 2016-10-06 | コニカミノルタ株式会社 | 色域拡大フィルム |
WO2017086362A1 (ja) * | 2015-11-20 | 2017-05-26 | Jsr株式会社 | ナノ粒子集合体及びその製造方法、ナノ粒子集合体組成物、波長変換層、並びにリガンド |
CN106753381A (zh) * | 2016-11-14 | 2017-05-31 | Tcl集团股份有限公司 | 一种ZnSexS1‑x合金量子点及其制备方法 |
US20180291268A1 (en) * | 2017-04-06 | 2018-10-11 | Samsung Display Co., Ltd. | Manufacturing method of quantum dot |
KR20180128540A (ko) * | 2017-05-23 | 2018-12-04 | 한국세라믹기술원 | 코어/쉘 다층구조 반도체 나노입자의 제조방법 |
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JP6690886B2 (ja) | 2020-04-28 |
EP4223855A1 (en) | 2023-08-09 |
EP3696248A1 (en) | 2020-08-19 |
KR20200066306A (ko) | 2020-06-09 |
JP7283733B2 (ja) | 2023-05-30 |
CN113583677A (zh) | 2021-11-02 |
AU2018348597A1 (en) | 2020-04-23 |
CN111201305B (zh) | 2021-07-16 |
TWI756032B (zh) | 2022-02-21 |
US20200347296A1 (en) | 2020-11-05 |
JP7473050B2 (ja) | 2024-04-23 |
JP2019081905A (ja) | 2019-05-30 |
US20210388263A1 (en) | 2021-12-16 |
KR102661236B1 (ko) | 2024-04-29 |
US11845890B2 (en) | 2023-12-19 |
CN111201305A (zh) | 2020-05-26 |
JP2023101543A (ja) | 2023-07-21 |
TW201923036A (zh) | 2019-06-16 |
WO2019074083A1 (ja) | 2019-04-18 |
US20240124774A1 (en) | 2024-04-18 |
TW202127684A (zh) | 2021-07-16 |
TWI720352B (zh) | 2021-03-01 |
KR20240058978A (ko) | 2024-05-07 |
US11124703B2 (en) | 2021-09-21 |
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