JPWO2018221131A1 - 電子部品 - Google Patents
電子部品 Download PDFInfo
- Publication number
- JPWO2018221131A1 JPWO2018221131A1 JP2019522057A JP2019522057A JPWO2018221131A1 JP WO2018221131 A1 JPWO2018221131 A1 JP WO2018221131A1 JP 2019522057 A JP2019522057 A JP 2019522057A JP 2019522057 A JP2019522057 A JP 2019522057A JP WO2018221131 A1 JPWO2018221131 A1 JP WO2018221131A1
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- Prior art keywords
- conductor
- insulator
- layer
- wiring conductor
- face
- Prior art date
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- 239000004020 conductor Substances 0.000 claims abstract description 219
- 238000007747 plating Methods 0.000 claims abstract description 54
- 239000012212 insulator Substances 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 239000000696 magnetic material Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 abstract description 46
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 46
- 239000010410 layer Substances 0.000 description 132
- 239000011229 interlayer Substances 0.000 description 24
- 239000003990 capacitor Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 description 5
- 241001125929 Trisopterus luscus Species 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/04—Fixed inductances of the signal type with magnetic core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/40—Structural association with built-in electric component, e.g. fuse
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/008—Electric or magnetic shielding of printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
- H01F2027/2809—Printed windings on stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Coils Or Transformers For Communication (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
第1の絶縁体と、前記第1の絶縁体よりも抵抗率の大きい第2の絶縁体とを備えた積層体と、
前記第1の絶縁体と前記第2の絶縁体との間に位置し、所定の端面が少なくとも前記積層体の端面近傍に位置する金属導体と、
前記金属導体の所定の端面に形成され、かつ、前記第2の絶縁体の端面よりも前記第1の絶縁体の端面の方に広がる態様で形成されているめっき膜と、
前記めっき膜の外側に形成され、当該めっき膜を介して前記金属導体と電気的に接続されている外側導体と、
を備えることを特徴とする。
前記外側導体は、シールドとしての機能を有するように構成されていてもよい。
20 フェライト基板
20M マザー積層体
21 第1の磁性体層
22 第2の磁性体層
22a 第2の磁性体層の端面
23 第3の非磁性体層
24 第1の非磁性体層
25 第2の非磁性体層
25a 第2の非磁性体層の端面
30 封止樹脂
51 第1の実装型電子部品
52 第2の実装型電子部品
60 外側導体
71 制御IC
72 入力コンデンサ
73 インダクタ
74 出力コンデンサ
81、82 めっき膜
201 第1側面
202 第2側面
203 第2主面
401 コイル
411 第1の端子導体
412 第2の端子導体
421 第3の配線導体
422 第4の配線導体
422a 第4の配線導体の端面
431 第3の層間接続導体
432 第4の層間接続導体
441 第1の部品実装用ランド導体
442 第2の部品実装用ランド導体
461 第1の層間接続導体
462 第2の層間接続導体
20 フェライト基板
20M マザー積層体
21 第1の磁性体層
22 第2の磁性体層
22a 第2の磁性体層の端面
23 第3の非磁性体層
24 第1の非磁性体層
25 第2の非磁性体層
25a 第2の非磁性体層の端面
30 封止樹脂
51 第1の実装型電子部品
52 第2の実装型電子部品
60 外側導体
71 制御IC
72 入力コンデンサ
73 インダクタ
74 出力コンデンサ
81、82 めっき膜
201 第1側面
202 第2側面
203A 第1主面
203B 第2主面
401 コイル
411 第1の端子導体
412 第2の端子導体
421 第3の配線導体
422 第4の配線導体
422a 第4の配線導体の端面
431 第3の層間接続導体
432 第4の層間接続導体
441 第1の部品実装用ランド導体
442 第2の部品実装用ランド導体
461 第1の層間接続導体
462 第2の層間接続導体
Claims (5)
- 第1の絶縁体と、前記第1の絶縁体よりも抵抗率の大きい第2の絶縁体とを備えた積層体と、
前記第1の絶縁体と前記第2の絶縁体との間に位置し、所定の端面が少なくとも前記積層体の端面近傍に位置する金属導体と、
前記金属導体の所定の端面に形成され、かつ、前記第2の絶縁体の端面よりも前記第1の絶縁体の端面の方に広がる態様で形成されているめっき膜と、
前記めっき膜の外側に形成され、当該めっき膜を介して前記金属導体と電気的に接続されている外側導体と、
を備えることを特徴とする電子部品。 - 前記金属導体の所定の端面は、前記積層体の端面よりも内側に位置することを特徴とする請求項1に記載の電子部品。
- 前記第1の絶縁体は磁性体であり、前記第2の絶縁体は非磁性体であることを特徴とする請求項1または2に記載の電子部品。
- 前記第1の絶縁体の内部にはコイルが形成されており、
前記外側導体は、シールドとしての機能を有することを特徴とする請求項1〜3のいずれかに記載の電子部品。 - 前記金属導体は、グランドと電気的に接続されていることを特徴とする請求項1〜4のいずれかに記載の電子部品。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017108972 | 2017-06-01 | ||
JP2017108972 | 2017-06-01 | ||
PCT/JP2018/017804 WO2018221131A1 (ja) | 2017-06-01 | 2018-05-08 | 電子部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018221131A1 true JPWO2018221131A1 (ja) | 2019-11-07 |
JP6628007B2 JP6628007B2 (ja) | 2020-01-08 |
Family
ID=64456201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019522057A Active JP6628007B2 (ja) | 2017-06-01 | 2018-05-08 | 電子部品 |
Country Status (3)
Country | Link |
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US (1) | US10971456B2 (ja) |
JP (1) | JP6628007B2 (ja) |
WO (1) | WO2018221131A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020013100A1 (ja) * | 2018-07-13 | 2020-01-16 | 株式会社村田製作所 | 積層電子部品および積層電子部品の製造方法 |
KR102404315B1 (ko) * | 2020-05-08 | 2022-06-07 | 삼성전기주식회사 | 코일 부품 |
US20220066036A1 (en) * | 2020-08-25 | 2022-03-03 | Lumentum Operations Llc | Package for a time of flight device |
FR3127841A1 (fr) * | 2021-10-01 | 2023-04-07 | Stmicroelectronics (Tours) Sas | Transformateur dans un substrat de boitier |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09181443A (ja) * | 1995-12-25 | 1997-07-11 | Murata Mfg Co Ltd | 電子部品の製造方法 |
WO2016121491A1 (ja) * | 2015-01-30 | 2016-08-04 | 株式会社村田製作所 | 電子回路モジュール |
JP2016201434A (ja) * | 2015-04-09 | 2016-12-01 | 日本特殊陶業株式会社 | セラミック配線基板およびその製造方法 |
WO2017006784A1 (ja) * | 2015-07-06 | 2017-01-12 | 株式会社村田製作所 | Dc-dcコンバータ |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7351674B2 (en) * | 2004-03-01 | 2008-04-01 | Murata Manufacturing Co., Ltd. | Insulating ceramic composition, insulating ceramic sintered body, and mulitlayer ceramic electronic component |
US8053253B2 (en) * | 2008-06-06 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5493328B2 (ja) | 2008-10-09 | 2014-05-14 | 株式会社村田製作所 | 積層型電子部品の製造方法 |
KR101171512B1 (ko) * | 2010-06-08 | 2012-08-06 | 삼성전기주식회사 | 반도체 패키지의 제조 방법 |
JP5480923B2 (ja) * | 2011-05-13 | 2014-04-23 | シャープ株式会社 | 半導体モジュールの製造方法及び半導体モジュール |
JP2015115552A (ja) * | 2013-12-13 | 2015-06-22 | 株式会社東芝 | 半導体装置およびその製造方法 |
-
2018
- 2018-05-08 JP JP2019522057A patent/JP6628007B2/ja active Active
- 2018-05-08 WO PCT/JP2018/017804 patent/WO2018221131A1/ja active Application Filing
-
2019
- 2019-09-19 US US16/575,563 patent/US10971456B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09181443A (ja) * | 1995-12-25 | 1997-07-11 | Murata Mfg Co Ltd | 電子部品の製造方法 |
WO2016121491A1 (ja) * | 2015-01-30 | 2016-08-04 | 株式会社村田製作所 | 電子回路モジュール |
JP2016201434A (ja) * | 2015-04-09 | 2016-12-01 | 日本特殊陶業株式会社 | セラミック配線基板およびその製造方法 |
WO2017006784A1 (ja) * | 2015-07-06 | 2017-01-12 | 株式会社村田製作所 | Dc-dcコンバータ |
Also Published As
Publication number | Publication date |
---|---|
US10971456B2 (en) | 2021-04-06 |
JP6628007B2 (ja) | 2020-01-08 |
WO2018221131A1 (ja) | 2018-12-06 |
US20200013729A1 (en) | 2020-01-09 |
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