JPWO2017122473A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2017122473A1 JPWO2017122473A1 JP2017561548A JP2017561548A JPWO2017122473A1 JP WO2017122473 A1 JPWO2017122473 A1 JP WO2017122473A1 JP 2017561548 A JP2017561548 A JP 2017561548A JP 2017561548 A JP2017561548 A JP 2017561548A JP WO2017122473 A1 JPWO2017122473 A1 JP WO2017122473A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000003780 insertion Methods 0.000 claims description 92
- 230000037431 insertion Effects 0.000 claims description 92
- 238000010586 diagram Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Photovoltaic Devices (AREA)
- Connecting Device With Holders (AREA)
Abstract
Description
特許文献1 実開平5−15445号公報
Claims (12)
- 主面部に貫通孔を有する端子部と、
前記貫通孔と対向する位置に窪みを有するケース部と
を備え、
前記ケース部は、前記端子部の端面と対向する端面対向部を有し、
前記端面と前記端面対向部の少なくとも一方に端面突起部を設けた
半導体装置。 - 前記ケース部は、
半導体チップが載置され、前記端子部が固定される底部と、
前記底部の少なくとも一部を覆い、且つ、前記端子部の主面部を露出させる開口が設けられた蓋部と、
前記蓋部の前記開口において、前記端子部の主面部と前記底部との間に挿入され、前記端子部の前記貫通孔と対向する位置に前記窪みを有する挿入部と
を有し、
前記挿入部の挿入方向において、前記端子部の前記端面と対向する前記蓋部に前記端面対向部が設けられる
請求項1に記載の半導体装置。 - 前記端面突起部は、前記底部から離れるほど徐々に厚みが増加するテーパー部を有する
請求項2に記載の半導体装置。 - 前記挿入部は、前記端子部の前記主面部と対向する主面対向部を有し、
前記主面部と前記主面対向部の少なくとも一方に主面突起部を設けた
請求項2に記載の半導体装置。 - 前記主面突起部を、前記端子部毎に少なくとも3つ設けた
請求項4に記載の半導体装置。 - 前記端子部は、前記主面部と連結され、前記挿入部の側壁および前記蓋部の内壁に挟まれる側面部を有し、
前記端子部の前記側面部と、前記挿入部の前記側壁の少なくとも一方に側面突起部を設けた
請求項4または5に記載の半導体装置。 - 前記側面突起部は、前記挿入方向において、前記蓋部の前記端面対向部から離れるほど徐々に厚みが増加するテーパー部を有する
請求項6に記載の半導体装置。 - 前記端子部は、前記側面部と連結され、且つ、前記ケース部の前記底部に固定される足部を更に備え、
前記ケース部は、前記足部を前記ケース部の前記底部に向けて押圧する押圧部を有し、
前記主面突起部は、前記挿入部の前記主面対向部に設けられ、前記端子部の前記主面部を前記ケース部の前記底部から離れる方向に押圧する
請求項6に記載の半導体装置。 - 前記側面突起部は、前記端子部の前記側面部と平行な面内において、前記側面部と近接して設けられた2つの前記主面突起部と、前記押圧部および前記足部の接続点とで囲まれる三角形の内部に配置される
請求項8に記載の半導体装置。 - 前記挿入方向に沿って複数の前記端子部が配列され、
それぞれの前記端子部に対応して、前記側面突起部が設けられる
請求項8に記載の半導体装置。 - 前記挿入方向において最も手前に設けられた前記端子部に対応して、前記端子部の前記側面部と、前記挿入部の前記側壁の一方に、前記側面突起部と嵌合する側面溝部が設けられている
請求項10に記載の半導体装置。 - 前記足部は、
前記挿入方向に延伸する延伸部と、
前記延伸部の前記挿入方向におけるいずれかの端部から、前記ケース部の前記底部に向かって延伸して設けられ、前記底部に固定される固定部と
を有し、
少なくとも一つの前記端子部は、前記端面突起部に近い側の前記延伸部の端部に前記固定部が設けられ、
少なくとも一つの前記端子部は、前記端面突起部から遠い側の前記延伸部の端部に前記固定部が設けられ、
それぞれの前記端子部において、前記固定部の位置に応じて前記主面突起部の位置が異なる
請求項10に記載の半導体装置。
Applications Claiming Priority (3)
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JP2016003699 | 2016-01-12 | ||
JP2016003699 | 2016-01-12 | ||
PCT/JP2016/086642 WO2017122473A1 (ja) | 2016-01-12 | 2016-12-08 | 半導体装置 |
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JPWO2017122473A1 true JPWO2017122473A1 (ja) | 2018-04-19 |
JP6516024B2 JP6516024B2 (ja) | 2019-05-22 |
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JP2017561548A Active JP6516024B2 (ja) | 2016-01-12 | 2016-12-08 | 半導体装置 |
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US (1) | US10522434B2 (ja) |
JP (1) | JP6516024B2 (ja) |
CN (1) | CN107851633B (ja) |
WO (1) | WO2017122473A1 (ja) |
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DE102018204408B4 (de) * | 2018-03-22 | 2022-05-05 | Danfoss Silicon Power Gmbh | Stromschiene, verfahren zum herstellen derselben und leistungsmodul, welches eine solche aufweist |
JP7275493B2 (ja) | 2018-08-07 | 2023-05-18 | 富士電機株式会社 | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11126842A (ja) * | 1997-10-22 | 1999-05-11 | Toshiba Corp | 半導体装置 |
WO2012066833A1 (ja) * | 2010-11-16 | 2012-05-24 | 富士電機株式会社 | 半導体装置 |
WO2012124209A1 (ja) * | 2011-03-16 | 2012-09-20 | 富士電機株式会社 | 半導体モジュールおよびその製造方法 |
WO2015141325A1 (ja) * | 2014-03-19 | 2015-09-24 | 富士電機株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2560909Y2 (ja) | 1991-08-05 | 1998-01-26 | 日本インター株式会社 | 複合半導体装置 |
EP1169736B1 (de) | 1999-03-17 | 2006-07-12 | EUPEC Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleitermodul |
WO2013145619A1 (ja) * | 2012-03-28 | 2013-10-03 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5900610B2 (ja) * | 2012-04-16 | 2016-04-06 | 富士電機株式会社 | 半導体装置および半導体装置用冷却器 |
-
2016
- 2016-12-08 CN CN201680039319.2A patent/CN107851633B/zh active Active
- 2016-12-08 JP JP2017561548A patent/JP6516024B2/ja active Active
- 2016-12-08 WO PCT/JP2016/086642 patent/WO2017122473A1/ja active Application Filing
-
2017
- 2017-12-27 US US15/854,796 patent/US10522434B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11126842A (ja) * | 1997-10-22 | 1999-05-11 | Toshiba Corp | 半導体装置 |
WO2012066833A1 (ja) * | 2010-11-16 | 2012-05-24 | 富士電機株式会社 | 半導体装置 |
WO2012124209A1 (ja) * | 2011-03-16 | 2012-09-20 | 富士電機株式会社 | 半導体モジュールおよびその製造方法 |
WO2015141325A1 (ja) * | 2014-03-19 | 2015-09-24 | 富士電機株式会社 | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107851633A (zh) | 2018-03-27 |
CN107851633B (zh) | 2021-05-18 |
US10522434B2 (en) | 2019-12-31 |
JP6516024B2 (ja) | 2019-05-22 |
US20180122715A1 (en) | 2018-05-03 |
WO2017122473A1 (ja) | 2017-07-20 |
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