JPWO2017094280A1 - ボロメータ型テラヘルツ波検出素子およびボロメータ型テラヘルツ波検出素子アレイ - Google Patents
ボロメータ型テラヘルツ波検出素子およびボロメータ型テラヘルツ波検出素子アレイ Download PDFInfo
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- JPWO2017094280A1 JPWO2017094280A1 JP2017553643A JP2017553643A JPWO2017094280A1 JP WO2017094280 A1 JPWO2017094280 A1 JP WO2017094280A1 JP 2017553643 A JP2017553643 A JP 2017553643A JP 2017553643 A JP2017553643 A JP 2017553643A JP WO2017094280 A1 JPWO2017094280 A1 JP WO2017094280A1
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- bolometer
- terahertz wave
- type terahertz
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- 238000001514 detection method Methods 0.000 claims abstract description 41
- 239000010408 film Substances 0.000 claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims description 4
- 230000010287 polarization Effects 0.000 abstract description 24
- 229910052751 metal Inorganic materials 0.000 abstract description 22
- 239000002184 metal Substances 0.000 abstract description 22
- 230000000052 comparative effect Effects 0.000 abstract description 10
- 238000000862 absorption spectrum Methods 0.000 abstract description 6
- 230000001681 protective effect Effects 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
ボロメータ薄膜を含む温度検出部と、前記ボロメータ薄膜側の表面に反射膜が形成されていると共に内部に読出回路が形成された回路基板と、前記ボロメータ薄膜と前記読出回路とを接続する電極配線と、を備えるボロメータ型テラヘルツ波検出素子であって、
前記ボロメータ薄膜と前記反射膜との間の中間部に、垂直方向から見た平面構造の対称性が高くなるようにダミー部材を構成した、
ことを特徴とする。
Claims (5)
- ボロメータ薄膜を含む温度検出部と、前記ボロメータ薄膜側の表面に反射膜が形成されていると共に内部に読出回路が形成された回路基板と、前記ボロメータ薄膜と前記読出回路とを接続する電極配線と、を備えるボロメータ型テラヘルツ波検出素子であって、
前記ボロメータ薄膜と前記反射膜との間の中間部に、垂直方向から見た平面構造の対称性が高くなるようにダミー部材を構成した、
ことを特徴とするボロメータテラヘルツ波検出素子。 - 請求項1記載のボロメータ型テラヘルツ波検出素子であって、
前記ダミー部材は、前記電極配線と同一の材料により形成されている、
ボロメータ型テラヘルツ波検出素子。 - 請求項2記載のボロメータ型テラヘルツ波検出素子であって、
前記中間部には、前記温度検出部側からエアギャップと誘電体層とが形成されており、
前記ダミー部材は、前記誘電体層に形成されている、
ボロメータ型テラヘルツ波検出素子。 - 請求項3記載のボロメータ型テラヘルツ波検出素子であって、
前記電極配線は、前記誘電体層内では高さの異なる複数の平板を連結するように形成されており、
前記ダミー部材は、前記電極配線における前記複数の平板の少なくとも1つの平板と同一平面に形成されている、
ボロメータ型テラヘルツ波検出素子。 - 請求項1ないし4のうちのいずれか1つの請求項に記載のボロメータ型テラヘルツ波検出素子を縦横に整列配置してなるボロメータ型テラヘルツ波検出素子アレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2015234061 | 2015-11-30 | ||
JP2015234061 | 2015-11-30 | ||
PCT/JP2016/069020 WO2017094280A1 (ja) | 2015-11-30 | 2016-06-27 | ボロメータ型テラヘルツ波検出素子およびボロメータ型テラヘルツ波検出素子アレイ |
Publications (2)
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JPWO2017094280A1 true JPWO2017094280A1 (ja) | 2018-09-13 |
JP6814442B2 JP6814442B2 (ja) | 2021-01-20 |
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WO (1) | WO2017094280A1 (ja) |
Families Citing this family (4)
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US10983047B2 (en) | 2017-12-08 | 2021-04-20 | Duke University | Imaging devices including dielectric metamaterial absorbers and related methods |
DE102018105352A1 (de) | 2018-03-08 | 2019-09-12 | Deutsche Post Ag | Verfahren und Vorrichtung zur Untersuchung von Sendungen |
RU2684897C1 (ru) * | 2018-07-04 | 2019-04-16 | Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук | Широкополосный детектор терагерцевого излучения (варианты) |
KR102286307B1 (ko) * | 2019-11-01 | 2021-08-05 | 주식회사 트루윈 | 마이크로 볼로미터 및 마이크로 볼로미터 제조 방법 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07198474A (ja) * | 1993-12-27 | 1995-08-01 | Nippondenso Co Ltd | 赤外線センサ |
JP2012027010A (ja) * | 2010-06-25 | 2012-02-09 | Panasonic Electric Works Co Ltd | 焦電型赤外線検知素子およびそれを用いた赤外線センサ |
JP2012098275A (ja) * | 2010-11-03 | 2012-05-24 | Commissariat A L'energie Atomique & Aux Energies Alternatives | 懸架式ボロメータマイクロプレートに基づく赤外線検出器 |
JP2012194080A (ja) * | 2011-03-17 | 2012-10-11 | Nec Corp | ボロメータ型THz波検出器 |
US20150276489A1 (en) * | 2012-11-27 | 2015-10-01 | The University Court Of The University Of Glasgow | Terahertz radiation detector, focal plane array incorporating terahertz detector, multispectral metamaterial absorber, and combined optical filter and terahertz absorber |
WO2015159540A1 (ja) * | 2014-04-18 | 2015-10-22 | 日本電気株式会社 | テラヘルツ波検出器 |
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- 2016-06-27 WO PCT/JP2016/069020 patent/WO2017094280A1/ja active Application Filing
- 2016-06-27 JP JP2017553643A patent/JP6814442B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07198474A (ja) * | 1993-12-27 | 1995-08-01 | Nippondenso Co Ltd | 赤外線センサ |
JP2012027010A (ja) * | 2010-06-25 | 2012-02-09 | Panasonic Electric Works Co Ltd | 焦電型赤外線検知素子およびそれを用いた赤外線センサ |
JP2012098275A (ja) * | 2010-11-03 | 2012-05-24 | Commissariat A L'energie Atomique & Aux Energies Alternatives | 懸架式ボロメータマイクロプレートに基づく赤外線検出器 |
JP2012194080A (ja) * | 2011-03-17 | 2012-10-11 | Nec Corp | ボロメータ型THz波検出器 |
US20150276489A1 (en) * | 2012-11-27 | 2015-10-01 | The University Court Of The University Of Glasgow | Terahertz radiation detector, focal plane array incorporating terahertz detector, multispectral metamaterial absorber, and combined optical filter and terahertz absorber |
WO2015159540A1 (ja) * | 2014-04-18 | 2015-10-22 | 日本電気株式会社 | テラヘルツ波検出器 |
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