JPWO2017057623A1 - 基板処理装置および基板処理方法 - Google Patents
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Abstract
Description
Claims (20)
- 昇華性物質が塗布された第1面と、その反対側の第2面とを有する基板を保持する基板保持部と、
基板保持部により保持された基板を収容する処理室と、
前記基板の第1面に塗布された昇華性物質を昇華させるために前記処理室の内部を加熱する加熱部と、
前記処理室にガスを供給するガス供給部と、を備え、
前記ガス供給部はガスを噴射するガス噴射口を有し、前記ガス噴射口は、前記基板保持部により保持された前記基板の端縁よりも外側の位置に設けられ、前記基板保持部により保持された前記基板の前記第1面または前記第2面に沿う方向に流れるガスの流れを形成することを特徴とする基板処理装置。 - 前記基板保持部は、複数の基板を当該基板の厚さ方向に間隔を空けて並べて保持するように構成され、前記ガス供給部は、各基板に対して前記ガスの流れが形成されるように、各基板に対応して設けられた複数のガス噴射口を有する、請求項1記載の基板処理装置。
- 前記ガス供給部の各ガス噴射口は各基板に対応して一対一の関係で設けられている、請求項2記載の基板処理装置。
- 前記複数のガス噴射口が設けられている側と反対側に1つの排気口が設けられ、前記1つの排気口を介して前記処理室の内部が吸引される、請求項2記載の基板処理装置。
- 前記基板保持部は、前記複数の基板を水平姿勢で鉛直方向に間隔を空けて保持するように構成されている、請求項2記載の基板処理装置。
- 前記処理室内を前記基板の配列方向に関して互いに隔離された複数の区画に区切る複数の仕切り板が設けられ、前記仕切り板は前記基板保持部により保持される前記基板と平行に延び、前記基板保持部は各閉じた区画内に1枚ずつ基板を保持する、請求項2記載の基板処理装置。
- 前記加熱部は、前記各仕切り板に設けられたヒータを有する、請求項6記載の基板処理装置。
- 前記基板保持部は、各基板の前記第2面を下方から支持するために前記各仕切り板に設けられた基板支持部材を有する、請求項6記載の基板処理装置。
- 前記基板保持部は、前記処理室の両側壁から前記処理室の中央部に向けて延び、各基板の前記第2面の周縁部を支持する一対の棚状の基板支持部材の組を複数組有している、請求項5記載の基板処理装置。
- 前記処理室に基板を搬出入するための開口を閉鎖するゲートバルブを更に備え、前記複数のガス噴射口が前記ゲートバルブの弁体に設けられている、請求項5記載の基板処理装置。
- 前記基板保持部は、複数の基板を、各基板の前記第1面を下向きにして水平姿勢で鉛直方向に間隔を空けて並べるよう、保持する、請求項1記載の基板処理装置。
- 前記ガス供給部は、前記基板保持部により保持された前記基板の前記第1面の近傍を前記第1面に沿う方向に流れるガスの流れを形成する、請求項1記載の基板処理装置。
- 前記加熱部は、前記基板保持部により保持された前記基板の前記第2面との間に隙間を空けて配置された熱板を有する、請求項12記載の基板処理装置。
- 前記ガス供給部は、前記基板保持部により保持された前記基板の前記第1面の近傍を前記第1面に沿う方向に流れるガスの流れ、及び前記第2面の近傍を前記第2面に沿う方向に流れるガスの流れを形成する、請求項1記載の基板処理装置。
- 前記ガス供給部の動作を制御する制御部をさらに備え、前記制御部は、前記基板の第1面に塗布された昇華性物質を液相へと変化させる前記基板の周囲の圧力上昇が生じず、かつ、前記加熱部から前記基板への熱伝導が促進されるような量のガスを前記基板の周囲に存在させるような流量で、前記ガス供給部に処理室内にガスを供給させる、請求項4記載の基板処理装置。
- 前記ガス供給部の動作を制御する制御部をさらに備え、前記制御部は、前記基板保持部により保持された基板上に塗布された昇華性物質の昇華が開始される前から、前記ガス供給部に前記ガスを噴射させる、請求項1記載の基板処理装置。
- 前記ガス供給部の動作を制御する制御部をさらに備え、前記制御部は、前記基板保持部により保持された基板上に塗布された昇華性物質が昇華することにより発生した昇華ガスの発生量に応じて、前記ガス供給部から前記処理室内に供給されるガスの供給流量を変化させる、請求項1記載の基板処理装置。
- 前記ガス供給部から前記処理室内に供給されるガスの温度を調整するガス温度調整部と、前記ガス温度調整部の動作を制御する制御部と、をさらに備え、前記制御部は、前記ガス温度調整部により、昇華処理の終了が近づくにつれて前記ガス供給部から前記処理室内に供給されるガスの温度を低下させる、請求項1記載の基板処理装置。
- 昇華性物質が塗布された第1面と、その反対側の第2面とを有する基板を処理室内に配置することと、
前記基板の第1面に塗布された昇華性物質を昇華させるために前記基板を加熱することと、
前記処理室内において前記基板の端縁よりも外側の位置に設けられたガス噴射口からガスを噴射して、前記処理室内に配置された前記基板の前記第1面または前記第2面に沿う方向に流れるガスの流れを形成することと
を備えた基板処理方法。 - 前記基板を処理室内に配置することは、複数の基板を、各基板の前記第1面を下向きにして水平姿勢で鉛直方向に間隔を空けて並べることを含む、請求項19記載の基板処理方法。
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CN112424922A (zh) * | 2018-07-17 | 2021-02-26 | Asml荷兰有限公司 | 粒子束检查装置 |
JP7122911B2 (ja) * | 2018-08-31 | 2022-08-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
WO2020100381A1 (ja) * | 2018-11-14 | 2020-05-22 | 東京エレクトロン株式会社 | 基板処理装置及び基板搬送方法 |
US20200294819A1 (en) * | 2019-03-12 | 2020-09-17 | Nissin Ion Equipment Co., Ltd. | Systems and Methods for Substrate Cooling |
CN111834247B (zh) * | 2019-04-23 | 2023-09-08 | 北京北方华创微电子装备有限公司 | 冷却装置和半导体处理设备 |
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- 2016-09-29 CN CN201680056032.0A patent/CN108028193B/zh active Active
- 2016-09-29 US US15/764,482 patent/US20180240684A1/en not_active Abandoned
- 2016-09-29 KR KR1020187007906A patent/KR102629526B1/ko active IP Right Grant
- 2016-09-29 JP JP2017543588A patent/JP6518778B2/ja active Active
- 2016-09-29 WO PCT/JP2016/078903 patent/WO2017057623A1/ja active Application Filing
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KR102629526B1 (ko) | 2024-01-25 |
US20180240684A1 (en) | 2018-08-23 |
CN108028193A (zh) | 2018-05-11 |
WO2017057623A1 (ja) | 2017-04-06 |
CN108028193B (zh) | 2022-04-22 |
KR20180059772A (ko) | 2018-06-05 |
JP6518778B2 (ja) | 2019-05-22 |
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