JPWO2017037785A1 - 基板処理装置および半導体装置の製造方法 - Google Patents
基板処理装置および半導体装置の製造方法 Download PDFInfo
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- JPWO2017037785A1 JPWO2017037785A1 JP2017537055A JP2017537055A JPWO2017037785A1 JP WO2017037785 A1 JPWO2017037785 A1 JP WO2017037785A1 JP 2017537055 A JP2017537055 A JP 2017537055A JP 2017537055 A JP2017537055 A JP 2017537055A JP WO2017037785 A1 JPWO2017037785 A1 JP WO2017037785A1
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Abstract
Description
基板を収容する収納容器を載置する載置棚を備える収容室と、
前記収容室の天井部に設置され、前記収納容器の上部を把持して搬送する搬送機構と、
前記収容室に対して前記収納容器を搬入出するポートと、を備え、
前記ポートは、
基台上に固定された調整板と、
前記収納容器を載置するステージと
前記調整板の上部に設置され、前記ステージの下面後方と連結部材を介して連結され、前記ステージを水平移動させる水平駆動機構と、を有し、
前記水平駆動機構は、前記ステージの水平移動を補助し、一端が互いに連結された一対のガイド部と、前記ガイド部の間に設置され、前記ガイド部の連結部分を押圧する第1駆動部とにより構成される技術が提供される。
図1に示すように、本実施形態において、基板処理装置4は、ICの製造方法における熱処理工程を実施する縦型熱処理装置(バッチ式縦型熱処理装置)として構成されている。なお、本発明が適用される縦型熱処理装置では、基板としてのウエハWを搬送するキャリアとしてFOUP(Front Opening Unified Pod:以下、ポッドという。)20が使用されている。基板処理装置4は後述する処理炉8、収容室12、搬送室16を備える。
基板処理装置4の筐体内前側には、ポッド20を装置内に搬入し、収納する収容室12が配置されている。収容室12の筐体前側には、ポッド20を収容室12に対して搬入搬出するための開口である搬入出口22Aが収容室12の筐体内外を連通するように開設されている。搬入出口22Aはフロントシャッタによって開閉されるように構成されていても良い。搬入出口22Aの筐体内側にはAGVポート(I/Oステージ)22が設けられている。収容室12と搬送室16との間の壁面には、後述するロードポート42が設置されている。ポッド20はAGVポート22上に基板処理装置4外にある工程内搬送装置(工程間搬送装置)によって基板処理装置4内に搬入され、かつまた、AGVポート22上から搬出される。
収容室12の後方に隣接して搬送室16が構成されている。収容室12の搬送室16側には、ウエハWを搬送室16に対して搬入出するためのウエハ搬入出口が水平方向に複数並べられて開設されており、各ウエハ搬入出口に対してロードポート42がそれぞれ設置されている。ロードポート42は、ポッド20を載置する載置台42Bを水平移動させてウエハ搬入出口に押し当て、ポッド20の蓋を展開する。ポッド20の蓋が展開されると、基板移載機86によって、ポッド20内外への基板Wの搬送が行われる。
搬送室16の上方には処理炉8が設けられている。図3に示すように、処理炉8は加熱手段(加熱機構)としてのヒータ46を有する。ヒータ46は円筒形状であり、保持板としてのヒータベース(図示せず)に支持されることにより垂直に据え付けられている。ヒータ46は、後述するようにガスを熱で活性化(励起)させる活性化機構(励起部)としても機能する。
複数枚のウエハWがボート58に装填(ウエハチャージ)されると、ボート58は、ボートエレベータ82によって処理室54内に搬入(ボートロード)される。このとき、シールキャップ78は、Oリング78Aを介して反応管50の下端を気密に閉塞(シール)した状態となる。
処理室54内、すなわち、ウエハWが存在する空間が所定の圧力(真空度)となるように、真空ポンプ74によって真空排気(減圧排気)される。この際、処理室54内の圧力は、圧力センサ70で測定され、この測定された圧力情報に基づきAPCバルブ72が、フィードバック制御される。真空ポンプ74は、少なくともウエハWに対する処理が終了するまでの間は常時作動させた状態を維持する。
処理室54内の温度が予め設定された処理温度に安定すると、次の2つのステップ、すなわち、ステップ1〜2を順次実行する。
このステップでは、処理室54内のウエハWに対し、HCDSガスを供給する。
ステップ1が終了した後、処理室54内のウエハW、すなわち、ウエハW上に形成された第1の層に対してNH3ガスを供給する。NH3ガスは熱で活性化されてウエハWに対して供給されることとなる。
上述した2つのステップを非同時に、すなわち、同期させることなく行うサイクルを所定回数(n回)行うことにより、ウエハW上に、所定組成および所定膜厚のSiN膜を形成することができる。なお、上述のサイクルは複数回繰り返すのが好ましい。すなわち、上述のサイクルを1回行う際に形成される第2の層(SiN層)の厚さを所定の膜厚よりも小さくし、第2の層(SiN層)を積層することで形成されるSiN膜の膜厚が所定の膜厚になるまで、上述のサイクルを複数回繰り返すのが好ましい。
処理温度(ウエハ温度):250〜700℃、
処理圧力(処理室内圧力):1〜4000Pa、
HCDSガス供給流量:1〜2000sccm、
NH3ガス供給流量:100〜10000sccm、
N2ガス供給流量:100〜10000sccm、
が例示される。それぞれの処理条件を、それぞれの範囲内のある値に設定することで、成膜処理を適正に進行させることが可能となる。
成膜処理が完了した後、バルブ66bを開き、ガス供給管62bからN2ガスを処理室54内へ供給し、排気管68から排気する。N2ガスはパージガスとして作用する。これにより、処理室54内がパージされ、処理室54内に残留するガスや反応副生成物が処理室54内から除去される(パージ)。その後、処理室54内の雰囲気が不活性ガスに置換され(不活性ガス置換)、処理室54内の圧力が常圧に復帰される(大気圧復帰)。
ボートエレベータ82によりシールキャップ78が下降され、反応管50の下端が開口される。そして、処理済のウエハWが、ボート58に支持された状態で、反応管50の下端から反応管50の外部に搬出される(ボートアンロード)。処理済のウエハWは、ボート58より取出される(ウエハディスチャージ)。
(1)収容室を省スペース化することができ、基板処理装置のフットプリントを削減することが可能となる。
(2)収納容器の搬送スピードを向上させることができ、スループットを向上させ、生産性を向上させることが可能となる。
(1)AGVポートを上下駆動させるようにすることにより、対面するロードポートと干渉しない高さ位置まで上昇させてポッドを受渡しするようにすることが可能となる。これにより、AGVポートとロードポートとの距離を縮めることが可能となり、収容室の設置面積を縮小することができ、装置のフットプリントを低減させることができる。
(2)AGVポートからロードポートへ直接ポッドを搬送することにより、搬送に係る時間を短縮でき、スループットを向上させることができる。
12・・・収容室
26・・・水平駆動機構
40・・・ポッド搬送機構
90・・・昇降駆動機構
Claims (13)
- 基板を収容する収納容器を載置する載置棚を備える収容室と、
前記収容室の天井部に設置され、前記収納容器の上部を把持して搬送する搬送機構と、
前記収容室に対して前記収納容器を搬入出するポートと、を備え、
前記ポートは、
基台上に固定された調整板と、
前記収納容器を載置するステージと、
前記調整板の上部に設置され、前記ステージの下面後方と連結部材を介して連結され、前記ステージを水平移動させる水平駆動機構と、を有し、
前記水平駆動機構は、前記ステージの水平移動を補助し、一端が互いに連結された一対のガイド部と、前記ガイド部の間に設置され、前記ガイド部の連結部分を押圧する第1駆動部とにより構成される基板処理装置。 - 前記収納容器を載置する載置位置と、前記収納容器を前記搬送機構に受け渡す受渡し位置との間で前記ステージを水平移動させるよう前記水平駆動機構を制御するよう構成された制御部をさらに備える請求項1記載の基板処理装置。
- 前記調整板の上部には配置され、前記ステージの位置を検出する2つのセンサと、
前記ガイド部の他端に設置され、前記センサの検出部分を通過する検知部材と、をさらに有し、
2つの前記センサはそれぞれ前記載置位置と前記受渡し位置とを検出する請求項2記載の基板処理装置。 - 前記水平駆動機構は、
前記ガイド部の片方の内側両端に設置されたプーリと、
前記プーリに掛け渡され、前記連結部材と第1固定部を介して固定された伝達部と、
前記伝達部と前記調整板とを固定する第2固定部と、
をさらに有し、
前記ステージは、前記ガイド部によって水平移動されつつ、前記伝達部の回転によって水平移動される請求項1乃至3いずれかに記載の基板処理装置。 - 前記ステージは、前方先端に開口を有する請求項1乃至4のいずれかに記載の基板処理装置。
- 前記ポートは、前記基台を上下に移動させる上下移動機構をさらに備える請求項1乃至5いずれかに記載の基板処理装置。
- 前記上下移動機構は、
前記基台に接続されたシャフトと、
前記シャフトを上下に駆動する第2駆動部と、
を有する請求項6記載の基板処理装置。 - 前記ポートに対面して設置され、前記収納容器を開閉するロードポートをさらに有し、
前記ロードポートの載置部の位置は、前記ポートの受渡し位置と重なる請求項6または7記載の基板処理装置。 - 前記制御部は、前記ロードポート上に前記収納容器が載置されている時には、前記ロードポート上の前記収納容器と干渉しない第1の高さ位置まで前記基台を上昇させ、前記搬送機構を前記ステージの前記受渡し位置上方に移動させ、前記ステージを前記受渡し位置まで移動させ、前記収納容器の受渡しをするように前記水平駆動機構、前記上下移動機構および前記搬送機構とを制御するよう構成される請求項8記載の基板処理装置。
- 前記制御部は、前記ロードポート上に前記収容器が載置されていない場合には、前記第1の高さ位置よりも低い第2の高さ位置まで前記基台を上昇させ、前記搬送機構を前記ステージの前記受渡し位置上方に移動させ、前記ステージを前記受渡し位置まで移動させ、前記収納容器の受渡しをするように前記水平駆動機構、前記上下移動機構および前記搬送機構とを制御するよう構成される請求項8または9記載の基板処理装置。
- 前記制御部は、前記基台の上昇と前記搬送機構の移動とを同時に行うように前記上下動移動機構と前記水平駆動機構とを制御するよう構成される請求項9または10記載の基板処理装置。
- 前記制御部は、前記第2の高さ位置まで前記基台を上昇させ、前記ステージを前記ロードポートの載置部上部まで移動させ、前記基台を下降させて前記収納容器を前記ロードポートに載置し、前記ステージを前記載置位置まで移動させ、前記既倍を下降させるように前記水平駆動機構と前記上下移動機構を制御するよう構成される付記6乃至11いずれかに記載の基板処理装置。
- 基板を収容する収納容器を収納する収容室の天井部に設置された搬送機構によって前記収納容器をポートから載置棚へ搬送する工程と、
前記収容容器内の前記基板を処理室内に搬送する工程と、
前記処理室内で前記基板を処理する工程と、を有し、
前記ポートは、
基台上に固定された調整板と、
前記収納容器を載置するステージと、
前記調整板の上部に設置され、前記ステージの下面後方と連結部材を介して連結され、前記ステージを水平移動させる水平駆動機構と、を有し、
前記水平駆動機構は、前記ステージの水平移動を補助し、一端が互いに連結された一対のガイド部と、前記ガイド部の間に設置され、前記ガイド部の連結部分を押圧する駆動部と、を備え、
前記収納容器を搬送する工程では、前記ステージを水平移動させ、前記搬送機構を前記ステージ上に移動させ、前記収納容器の上部を把持して搬送する半導体装置の製造方法。
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