WO2017037785A1 - 基板処理装置および半導体装置の製造方法 - Google Patents
基板処理装置および半導体装置の製造方法 Download PDFInfo
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- WO2017037785A1 WO2017037785A1 PCT/JP2015/074464 JP2015074464W WO2017037785A1 WO 2017037785 A1 WO2017037785 A1 WO 2017037785A1 JP 2015074464 W JP2015074464 W JP 2015074464W WO 2017037785 A1 WO2017037785 A1 WO 2017037785A1
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Definitions
- the present invention relates to a substrate processing apparatus and a method for manufacturing a semiconductor device.
- a vertical substrate processing apparatus is used in a heat treatment of a substrate in a manufacturing process of a semiconductor device (device).
- a robot hand is used in transporting a storage container in a storage chamber that temporarily stores a storage container storing a plurality of substrates (see, for example, Patent Document 1).
- An object of the present invention is to provide a technique capable of reducing the footprint of an apparatus.
- a storage chamber comprising a mounting shelf for mounting a storage container for storing a substrate; A transport mechanism installed on the ceiling of the storage chamber and gripping and transporting an upper portion of the storage container; A port for carrying the storage container into and out of the storage chamber, The port is An adjustment plate fixed on the base, A stage on which the storage container is placed; and a horizontal drive mechanism that is installed on an upper portion of the adjustment plate, is connected to a rear surface of the lower surface of the stage via a connecting member, and moves the stage horizontally.
- the horizontal drive mechanism assists in horizontal movement of the stage, and a pair of guide portions whose one ends are connected to each other; a first drive portion that is installed between the guide portions and presses the connection portion of the guide portions; Is provided.
- the footprint of the apparatus can be reduced.
- the substrate processing apparatus 4 is configured as a vertical heat treatment apparatus (batch type vertical heat treatment apparatus) that performs a heat treatment step in an IC manufacturing method. Has been.
- a FOUP Front Opening Unified Pod
- the substrate processing apparatus 4 includes a processing furnace 8, a storage chamber 12, and a transfer chamber 16, which will be described later.
- a storage chamber 12 for loading the pod 20 into the apparatus and storing it.
- a loading / unloading port 22 ⁇ / b> A that is an opening for loading / unloading the pod 20 into / from the storage chamber 12 is opened so as to communicate between the inside and outside of the housing of the storage chamber 12.
- the carry-in / out port 22A may be configured to be opened and closed by a front shutter.
- An AGV port (I / O stage) 22 is provided inside the housing of the loading / unloading port 22A.
- a load port 42 described later is installed on the wall surface between the storage chamber 12 and the transfer chamber 16.
- the pod 20 is loaded into the substrate processing apparatus 4 on the AGV port 22 by the in-process transfer apparatus (inter-process transfer apparatus) outside the substrate processing apparatus 4, and is also unloaded from the AGV port 22.
- a storage shelf (pod shelf) 30A for storing the pod 20 is installed in two upper and lower stages above the AGV port 22 in the front of the housing of the storage chamber 12.
- storage shelves (pod shelves) 30 ⁇ / b> B for storing the pods 20 are arranged in a matrix in the rear of the housing 12.
- the OHT port 32 is installed side by side on the same straight line in the horizontal direction with the upper storage shelf 30A in front of the housing.
- the pod 20 is carried into the OHT port 32 from above the substrate processing apparatus 4 by the in-process carrying apparatus (inter-process carrying apparatus) outside the substrate processing apparatus 4 and is also carried out from the OHT port 32.
- the AGV port 22, the storage shelf 30 ⁇ / b> A, and the OHT port 32 are configured such that the pod 20 can be moved horizontally between the placement position and the delivery position by the horizontal drive mechanism 26. Details of the horizontal drive mechanism 26 will be described later.
- the space between the front storage shelf 30 ⁇ / b> A and the rear storage shelf 30 ⁇ / b> B in the housing of the storage chamber 12 forms a pod transfer region 14. Is delivered and transported.
- a rail mechanism 40 ⁇ / b> A is formed on the ceiling of the pod transfer area 14 (the ceiling of the storage chamber 12) as a travel path of the pod transfer mechanism 40 described later.
- the delivery position is located in the pod conveyance area 14, for example, a position directly below the pod conveyance mechanism 40.
- the pod conveyance mechanism 40 that conveys the pod 20 includes a traveling unit 40B that travels on the traveling path, a holding unit 40C that holds the pod 24, and a lifting unit 40D that raises and lowers the holding unit 40C in the vertical direction.
- a transfer chamber 16 is configured adjacent to the rear of the storage chamber 12.
- a plurality of wafer loading / unloading ports for loading / unloading wafers W into / from the transfer chamber 16 are arranged in the horizontal direction on the transfer chamber 16 side of the storage chamber 12.
- a load port is provided for each wafer loading / unloading port. 42 is installed. The load port 42 horizontally moves the mounting table 42B on which the pod 20 is mounted, presses it against the wafer loading / unloading port, and expands the lid of the pod 20.
- the substrate transfer device 86 transports the substrate W into and out of the pod 20.
- a processing furnace 8 is provided above the transfer chamber 16. As shown in FIG. 3, the processing furnace 8 has a heater 46 as a heating means (heating mechanism).
- the heater 46 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate. As will be described later, the heater 46 also functions as an activation mechanism (excitation unit) that activates (excites) gas with heat.
- a reaction tube 50 that constitutes a reaction vessel (processing vessel) concentrically with the heater 46 is disposed inside the heater 46.
- the reaction tube 50 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened.
- a processing chamber 54 is formed in the cylindrical hollow portion of the reaction tube 50.
- the processing chamber 54 is configured to be able to accommodate wafers W as substrates in a state where they are aligned in multiple stages in a vertical posture in a horizontal posture by a boat 58 described later.
- a nozzle 60 is provided in the processing chamber 54 so as to penetrate the lower part of the reaction tube 50.
- the nozzle 60 is made of a heat resistant material such as quartz or SiC.
- a gas supply pipe 62 a is connected to the nozzle 60.
- the gas supply pipe 62a is provided with a mass flow controller (MFC) 64a that is a flow rate controller (flow rate control unit) and a valve 66a that is an on-off valve in order from the upstream direction.
- MFC mass flow controller
- a gas supply pipe 62b for supplying an inert gas is connected downstream of the valve 66a of the gas supply pipe 62a.
- the gas supply pipe 62b is provided with an MFC 64b and a valve 66b in order from the upstream direction.
- a processing gas supply unit that is a processing gas supply system is mainly configured by the gas supply pipe 62a, the MFC 64a, and the valve 66a.
- the nozzle 60 is provided in an annular space between the inner wall of the reaction tube 50 and the wafer W so as to rise upward from the lower portion of the inner wall of the reaction tube 50 in the arrangement direction of the wafer W. Yes. That is, the nozzle 60 is provided along the wafer arrangement region in a region horizontally surrounding the wafer arrangement region on the side of the wafer arrangement region where the wafers W are arranged.
- the nozzle 60 is configured as an L-shaped long nozzle, and its horizontal portion is provided so as to penetrate the lower side wall of the reaction tube 50, and its vertical portion is at least from one end side to the other end of the wafer arrangement region. It is provided to stand up to the side.
- a gas supply hole 60 ⁇ / b> A for supplying gas is provided on the side surface of the nozzle 60.
- the gas supply holes 60 ⁇ / b> A are opened so as to face the center of the reaction tube 50, and can supply gas toward the wafer W.
- a plurality of gas supply holes 60A are provided from the lower part to the upper part of the reaction tube 50, each having the same opening area, and further provided at the same opening pitch.
- the processing furnace 8 of this embodiment is not limited to the above-mentioned form.
- a metal manifold that supports the reaction tube 50 may be provided below the reaction tube 50, and a nozzle may be provided so as to penetrate the side wall of the manifold.
- an exhaust pipe 68 described later may be further provided in the manifold.
- the exhaust pipe 68 may be provided in the lower part of the reaction pipe 50 instead of the manifold.
- the furnace port part of the processing furnace 8 may be made of metal, and a nozzle or the like may be attached to the metal furnace port part.
- the soot reaction tube 50 is provided with an exhaust pipe 68 for exhausting the atmosphere in the processing chamber 54.
- a pressure sensor 70 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 54 and an APC (Auto Pressure Controller) valve 72 as a pressure regulator (pressure adjustment unit) are connected to the exhaust pipe 68.
- a vacuum pump 74 as an evacuation device is connected.
- the APC valve 72 can be evacuated and stopped in the processing chamber 54 by opening and closing the valve while the vacuum pump 74 is operated, and further, with the vacuum pump 74 being operated, The valve is configured to be able to adjust the pressure in the processing chamber 54 by adjusting the valve opening based on the pressure information detected by the pressure sensor 70.
- An exhaust system is mainly configured by the exhaust pipe 68, the APC valve 72, and the pressure sensor 70.
- the vacuum pump 74 may be included in the exhaust system.
- the soot reaction tube 50 is provided with a temperature detector 76 as a temperature detector.
- a temperature detector 76 is configured in an L shape like the nozzle 60, and is provided along the inner wall of the reaction tube 50.
- a seal cap 78 is provided as a furnace port lid capable of airtightly closing the lower end opening of the reaction tube 50.
- the seal cap 78 is made of a metal such as SUS or stainless steel and is a disk-shaped member.
- an O-ring 78A is provided as a seal member that comes into contact with the lower end of the reaction tube 50.
- a seal cap plate 78B that protects the seal cap 78 is installed on the inner surface of the upper surface of the seal cap 78 from the O-ring 78A.
- the seal cap plate 78B is made of a heat resistant material such as quartz or SiC, and is a disk-shaped member.
- the seal cap 78 is configured to abut on the lower end of the reaction tube 50 from the lower side in the vertical direction.
- the boat 58 as the substrate support is configured to support a plurality of wafers W, for example, 25 to 200 wafers W in a horizontal posture and aligned in the vertical direction in a state where the centers are aligned with each other in multiple stages, that is, It is configured to arrange at intervals.
- the boat 58 is made of a heat resistant material such as quartz or SiC.
- a rotation mechanism 80 for rotating the boat 58 is installed on the opposite side of the seal cap 78 from the processing chamber 54.
- the rotation shaft 80A of the rotation mechanism 80 is connected to the boat 58 through the seal cap 78.
- the rotation mechanism 80 is configured to rotate the wafer W by rotating the boat 58.
- the horizontal drive mechanism 26 of the storage shelf 30A, the AGV port 22 and the OHT port 32 of this embodiment will be described with reference to FIGS.
- the horizontal drive mechanism 26 is installed on a base 24 and is configured to be able to horizontally move a stage 25 that is a placement portion on which the pod 20 is placed.
- the base 24 includes a fixing plate 24A, an adjusting plate 24B, a fixing screw 24C, and an adjusting screw 24D.
- the fixing plate 24A and the adjustment plate 24B are connected by a plurality of adjusters.
- the adjuster includes a fixing screw 24C as a fastening member for fixing the fixing plate 24A and the adjusting plate 24B, and two adjustment screws 24D as horizontal adjustment members installed at positions facing the fixing screw 24C. It is possible to adjust the level of the stage 25 by adjusting the tightening degree of the adjusting screw 24D.
- the horizontal drive mechanism 26 includes a first drive unit 26A as a drive unit that horizontally moves the stage 25, a pair of guide units 26B that move the stage 25 in parallel, and a first drive unit.
- a transmission part (belt) 26C that transmits the power of 26A a pulley 26D that is a rotating member that rotates inside the guide part 26B and rotates the transmission part 26C, and a flat plate-like connection part that is connected to the lower part of the stage 25 (Plate) 26E, a fixing portion 26F for fixing the connecting portion 26E and the transmitting portion 26C, and a fixing portion 26G for fixing the transmitting portion 26C and the adjusting plate 24B.
- the first drive unit 26A is, for example, an air cylinder or a motor. As shown in FIG. 7, the leading ends of the guide portions 26B are connected to each other, and are formed in a U shape in plan view. 26 A of 1st drive parts are installed in the approximate center between guide part 26B, and it is comprised so that the connection part of guide part 26B may be pressed with a rod.
- the transmission portion 26 ⁇ / b> C is composed of an endless belt-like member and is stretched around a pulley 26 ⁇ / b> D.
- the transmission part 26C and the connecting part 26E are fixed by a block-shaped fixing part 26G, and the transmission part 26C and the adjustment plate 24B are fixed by a block-shaped fixing part 26H. Since the fixing portion 26H is fixed to the adjustment plate 24B, the transmission portion 26C can be rotated when the guide portion 26B moves. By rotating the transmission portion 26C, the stage 25 fixed to the connecting portion 26E can be moved horizontally.
- Two position sensors 28A are installed on the outer portion of the guide portion 26B on the adjustment plate 24B.
- the position sensor 28A is composed of, for example, a photo sensor.
- Each of the two position sensors 28A is installed to detect the position between the placement position of the stage 25 and the delivery position.
- a thin plate-like detection member 28B for detecting the position sensor 28A is attached to the rear end of the guide portion 26B on the side where the position sensor 28A is installed.
- the position of the stage 25 is detected by the detection member 28B passing through the detection portion of the position sensor 28A.
- a stopper 27 is attached to the end of the guide portion 26B on the side where the detection member 28B is not attached.
- a pod sensor 25B for detecting whether or not the pod 20 is placed is installed on the stage 25, a pod sensor 25B for detecting whether or not the pod 20 is placed is installed.
- the pod sensor 25B is composed of, for example, a photo sensor.
- the pin is pressed by the bottom surface of the pod 20, and the pressed pin passes through the detection portion of the pod sensor 25B, thereby detecting that the pod 20 is placed.
- the stage 25 has an opening 25A on the distal end side, and the stage 25 can be transported using the opening 25A as a handle during maintenance. With such a configuration, maintainability can be improved.
- the storage shelf 30 ⁇ / b> A and the OHT port 32 are installed on the long base 24 so that they can be independently driven in front of the housing.
- the horizontal drive mechanism 24 of the storage shelf 30B of the present embodiment will be described with reference to FIG.
- the difference between the storage shelf 30A, the AGV port 22, and the OHT port 22 from the horizontal drive mechanism 26 is that a plurality of stages 25 are connected and driven integrally.
- the connecting portion 26E of the horizontal drive unit 26 is extended horizontally to form a horizontally long shape, and a plurality of stages 25 are installed.
- One guide portion 26B is disposed at each of both ends of the short side of the connecting portion 26E. That is, four guide portions 26B are installed for the three stages 34C. With such a configuration, a plurality of stages 25 can be integrally driven by one first driving unit 26A.
- the controller 210 that is a control unit (control means) is configured as a computer including a CPU (Central Processing Unit) 212, a RAM (Random Access Access Memory) 214, a storage device 216, and an I / O port 218.
- the RAM 214, the storage device 216, and the I / O port 218 are configured to exchange data with the CPU 212 via the internal bus 220.
- an input / output device 222 configured as a touch panel or the like is connected to the controller 210.
- the storage device 216 is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
- a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of the substrate processing described later, and the like are stored in a readable manner.
- the process recipe is a combination of processes so that a predetermined result can be obtained by causing the controller 210 to execute each procedure in the substrate processing process described later, and functions as a program.
- the process recipe, the control program, and the like are collectively referred to simply as a program.
- program When the term “program” is used in this specification, it may include only a process recipe alone, only a control program alone, or both.
- the RAM 214 is configured as a memory area (work area) in which programs, data, and the like read by the CPU 212 are temporarily stored.
- the I / O port 218 includes the above-described MFCs 64a and 64b, valves 66a and 66b, pressure sensor 70, APC valve 72, heater 46, temperature detection unit 76, vacuum pump 74, rotation mechanism 80, boat elevator 82, and pod conveyance mechanism 40. Are connected to the sensors 25B and 28A, the horizontal drive mechanism 26, and the like.
- the CPU 212 is configured to read and execute a control program from the storage device 216 and to read a process recipe from the storage device 216 in response to an input of an operation command from the input / output device 222 or the like.
- the CPU 212 adjusts the flow rates of various gases by the MFCs 64 a and 46 b, the opening and closing operations of the valves 66 a and 48 b, the opening and closing operations of the APC valve 72, and the pressure by the APC valve 72 based on the pressure sensor 70 in accordance with the contents of the read process recipe.
- the pod transport mechanism 40 controls the pod transport operation, the drive operation of the horizontal drive mechanism 26 based on the sensors 25B and 28A, and the like.
- the controller 210 is stored in an external storage device 224 (for example, a magnetic disk, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card).
- the above-mentioned program can be configured by installing it in a computer.
- the storage device 216 and the external storage device 224 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
- recording medium When the term “recording medium” is used in this specification, it may include only the storage device 216, only the external storage device 224, or both.
- the provision of the program to the computer may be performed using communication means such as the Internet or a dedicated line without using the external storage device 224.
- the conveyance of the pod 20 using the above-described substrate processing apparatus 4 will be described.
- the pod 20 on the AGV port 22 or the OHT port 32 is carried into the substrate processing apparatus 4.
- the loaded pod 20 is automatically transported to the designated stage 25 of the storage shelf 30 by the pod transport mechanism 40, delivered, temporarily stored, and then transported from the storage shelf 30 to one load port 42. And delivered to the load port 42 directly.
- the traveling unit 40B is controlled to move the pod transport mechanism 40 above the delivery position of the stage 25 of the AGV port 22 on which the pod 20 to be transported is placed.
- the upper position of the delivery position is a position where the pod transport mechanism 40 can hold the pod 20 by lowering the holding section 40C by the elevating section 40D, that is, a position where the holding section 40C is directly above the pod 20.
- the stage 25 of the AGV port 22 on which the pod 20 to be carried is placed is moved horizontally (slid) to the delivery position.
- the sliding operation of the AGV port 22 and the driving of the pod transport mechanism 40 may be performed simultaneously.
- the elevating unit 40D is controlled, the holding unit 40C is lowered to a position where the pod 20 can be held, the holding unit 40C is controlled, and the pod 20 is held. To do. After confirming that the holding unit 40C holds the pod 20, the lifting unit 40D is controlled to raise the holding unit 40C.
- the stage 25 After confirming that the pod 20 is not placed on the stage 25 by the sensor 25B of the stage 25, the stage 25 is slid to the placement position. After the sensor 28A confirms that the stage 25 has returned to the placement position, the pod transport mechanism 40 is moved above the delivery position of the load port 42 or the storage shelf 30 to be delivered.
- the lifting / lowering portion 40 ⁇ / b> D is controlled to lower the holding portion 40 ⁇ / b> C and the pod 20 is placed on the placement portion of the load port 42. Is placed.
- the placement portion of the load port 42 is located directly below the pod transport mechanism 40 and does not need to be moved horizontally for delivery.
- the stage 25 of the storage shelf 30 as the transport destination is horizontally moved (slid) to the delivery position, and after confirming that the stage 25 has been slid to the delivery position by the sensor 28A, the lifting unit 40D To hold the pod 20 on the stage 25.
- the slide operation of the stage 25 of the storage shelf 30 and the driving of the pod transport mechanism 40 may be performed simultaneously.
- a sequence example of a process for forming a film on a substrate (hereinafter also referred to as a film forming process) will be described as one step of a semiconductor device (device) manufacturing process using the substrate processing apparatus 4 described above.
- a film forming process a sequence example of a process for forming a film on a substrate
- a first processing gas raw material gas
- a second processing gas reactive gas
- hexachlorodisilane (Si 2 Cl 6 , abbreviation: HCDS) gas is used as a source gas
- ammonia (NH 3 ) gas is used as a reaction gas
- SiN silicon nitride film
- An example of forming a film is also described.
- the operation of each part constituting the substrate processing apparatus 4 is controlled by the controller 210.
- a step of supplying HCDS gas to the wafer W in the processing chamber 54, a step of removing HCDS gas (residual gas) from the processing chamber 54, and a wafer in the processing chamber 54 By performing a cycle in which the process of supplying NH 3 gas to W and the process of removing NH 3 gas (residual gas) from the inside of the processing chamber 54 at the same time is performed a predetermined number of times (one or more times), the wafer W A SiN film is formed thereon.
- wafer when the term “wafer” is used, it means “wafer itself” or “a laminate (aggregate) of a wafer and a predetermined layer or film formed on the surface”. In other words, it may be called a wafer including a predetermined layer or film formed on the surface.
- wafer surface when the term “wafer surface” is used in this specification, it means “the surface of the wafer itself (exposed surface)” or “the surface of a predetermined layer or film formed on the wafer”. That is, it may mean “the outermost surface of the wafer as a laminated body”.
- the phrase “supplying a predetermined gas to the wafer” means “supplying a predetermined gas to the surface (exposed surface) of the wafer itself”, It may mean that “a predetermined gas is supplied to a layer, a film, or the like formed on the wafer, that is, to the outermost surface of the wafer as a laminated body”. Further, in this specification, when “describe a predetermined layer (or film) on the wafer” is described, “determine a predetermined layer (or film) on the surface (exposed surface) of the wafer itself”. , Or “to form a predetermined layer (or film) on the layer or film formed on the wafer, that is, on the outermost surface of the wafer as a laminate” There is.
- substrate is synonymous with the term “wafer”.
- the processing chamber 54 that is, the space where the wafer W exists is evacuated (reduced pressure) by the vacuum pump 74 so that a predetermined pressure (degree of vacuum) is obtained.
- a predetermined pressure degree of vacuum
- the vacuum pump 74 maintains a state in which it is always operated at least until the processing on the wafer W is completed.
- the wafer 46 in the processing chamber 54 is heated by the heater 46 so as to reach a predetermined temperature.
- the power supply to the heater 46 is feedback-controlled based on the temperature information detected by the temperature detector 76 so that the processing chamber 54 has a predetermined temperature distribution. Heating of the processing chamber 201 by the heater 46 is continuously performed at least until the processing on the wafer W is completed.
- the rotation of the boat 58 and the wafer W by the rotation mechanism 42 is started.
- the wafer 58 is rotated by rotating the boat 58 by the rotation mechanism 42.
- the rotation of the boat 58 and the wafer W by the rotation mechanism 42 is continuously performed at least until the processing on the wafer W is completed.
- Step 1 In this step, HCDS gas is supplied to the wafer W in the processing chamber 54.
- the valve 66a is opened and HCDS gas is allowed to flow into the gas supply pipe 62a.
- the flow rate of the HCDS gas is adjusted by the MFC 64 a, supplied into the processing chamber 54 through the nozzle 60, and exhausted from the exhaust pipe 68.
- the HCDS gas is supplied to the wafer W.
- the valve 66b is opened at the same time, and N 2 gas is allowed to flow into the gas supply pipe 62b.
- the flow rate of the N 2 gas is adjusted by the MFC 64 b, supplied into the processing chamber 54 together with the HCDS gas, and exhausted from the exhaust pipe 68.
- the valve 66a is closed and the supply of HCDS gas is stopped.
- the inside of the processing chamber 54 is evacuated by the vacuum pump 74, and the HCDS gas remaining in the processing chamber 54 or contributing to the formation of the first layer is processed.
- the inside of the chamber 54 is discharged.
- the supply of N 2 gas into the processing chamber 54 is maintained with the valve 66b kept open.
- the N 2 gas acts as a purge gas, whereby the effect of exhausting the gas remaining in the processing chamber 54 from the processing chamber 54 can be enhanced.
- the gas remaining in the processing chamber 54 may not be completely discharged, and the processing chamber 54 may not be completely purged. If the amount of gas remaining in the processing chamber 54 is very small, no adverse effect will occur in the subsequent step 2.
- the flow rate of the N 2 gas supplied into the processing chamber 54 does not need to be a large flow rate. For example, by supplying an amount of N 2 gas equivalent to the volume of the reaction tube 50 (processing chamber 54), step 2 is performed. Purging can be performed to such an extent that no adverse effect is caused. Thus, by not purging the inside of the processing chamber 54 completely, the purge time can be shortened and the throughput can be improved. The consumption of N 2 gas can be suppressed to the minimum necessary.
- Step 2 After step 1 is completed, NH 3 gas is supplied to the wafer W in the processing chamber 54, that is, the first layer formed on the wafer W.
- the NH 3 gas is activated by heat and supplied to the wafer W.
- the opening / closing control of the valves 66a, 28b is performed in the same procedure as the opening / closing control of the valves 66a, 28b in step 1.
- the flow rate of NH 3 gas is adjusted by the MFC 28 a, supplied into the processing chamber 54 through the nozzle 60, and exhausted from the exhaust pipe 68.
- NH 3 gas is supplied to the wafer W.
- the NH 3 gas supplied to the wafer W reacts with at least a part of the first layer formed on the wafer W in Step 1, that is, the Si-containing layer.
- the first layer is thermally nitrided by non-plasma and is changed (modified) into a second layer containing Si and N, that is, a silicon nitride layer (SiN layer).
- a second layer containing Si and N that is, a silicon nitride layer (SiN layer).
- plasma-excited NH 3 gas is supplied to the wafer W, and the first layer is plasma-nitrided to change the first layer to the second layer (SiN layer). May be.
- the valve 66a is closed and the supply of NH 3 gas is stopped. Then, the NH 3 gas and the reaction by-product remaining in the processing chamber 54 and contributed to the formation of the second layer are discharged from the processing chamber 54 by the same processing procedure as in Step 1. At this time, the point that the gas remaining in the processing chamber 54 does not have to be completely discharged is the same as in Step 1.
- a SiN film having a predetermined composition and a predetermined film thickness can be formed on the wafer W by performing the above-described two steps non-simultaneously, that is, by performing a cycle (n times) without synchronizing them.
- the above cycle is preferably repeated a plurality of times. That is, it is formed by stacking the second layer (SiN layer) by making the thickness of the second layer (SiN layer) formed when the above cycle is performed once smaller than a predetermined thickness.
- the above cycle is preferably repeated a plurality of times until the thickness of the SiN film reaches a predetermined thickness.
- processing conditions when performing the film forming process for example, Processing temperature (wafer temperature): 250 to 700 ° C. Processing pressure (processing chamber pressure): 1 to 4000 Pa, HCDS gas supply flow rate: 1 to 2000 sccm, NH 3 gas supply flow rate: 100-10000 sccm, N 2 gas supply flow rate: 100 to 10,000 sccm, Is exemplified.
- Processing temperature wafer temperature
- Processing pressure processing chamber pressure
- HCDS gas supply flow rate 1 to 2000 sccm
- NH 3 gas supply flow rate 100-10000 sccm
- N 2 gas supply flow rate 100 to 10,000 sccm
- Is exemplified Is exemplified.
- N 2 gas acts as a purge gas.
- the inside of the processing chamber 54 is purged, and the gas and reaction byproducts remaining in the processing chamber 54 are removed from the processing chamber 54 (purge).
- the atmosphere in the processing chamber 54 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 54 is returned to normal pressure (return to atmospheric pressure).
- the AGV port 22 further includes an elevating mechanism for elevating the base 24A.
- Elements that are substantially the same as those described in the above embodiment are given the same reference numerals, and descriptions thereof are omitted.
- an elevating drive mechanism 90 for elevating the pod 20 up and down is installed in the AGV port 22.
- the lift drive mechanism 90 includes a second drive unit 90A as a drive unit that moves the stage 25 up and down, and a shaft 90B that is lifted and lowered by the second drive unit 90A.
- the base 24 is installed horizontally at the upper end of the shaft 90B.
- the stage 25 is raised to a plurality of preset height positions.
- the stage 25 is raised to a first height position that is a position above the upper surface of the pod 20.
- the stage 25 is raised to a second height position that is lower than the first height position and higher than the stage of the load port 42.
- the height position of the stage 25 is detected by a height position sensor 90C installed in the vicinity of the lifting drive mechanism 90.
- the conveyance of the pod 20 in the second embodiment will be described.
- the pod 20 on the AGV port 22 is carried into the substrate processing apparatus 4.
- the loaded pod 20 is automatically transferred to the designated stage 25 of the storage shelf 30 by the pod transfer mechanism 40 and transferred, temporarily stored, and then transferred from the storage shelf 30 to one load port 42. Or delivered directly to the load port 42.
- the traveling unit 40B is controlled to move the pod transport mechanism 40 above the delivery position of the stage 25 of the AGV port 22 on which the pod 20 to be transported is placed.
- the stage 25 of the AGV port 22 is raised to the first height position.
- the stage 25 of the AGV port 22 is raised to the second height position.
- the movement of the pod transfer mechanism 40 and the raising operation of the AGV port may be performed simultaneously.
- the elevating unit 40D is controlled, the holding unit 40C is lowered to a position where the pod 20 can be held, the holding unit 40C is controlled, and the pod 20 is held. To do. After confirming that the holding unit 40C holds the pod 20, the lifting unit 40D is controlled to raise the holding unit 40C.
- the stage 25 After confirming that the pod 20 is not placed by the sensor 25B of the stage 25, the stage 25 is slid to the placement position. After confirming that the stage 25 has returned to the placement position by the sensor 28A, the stage 25 is lowered to the home position. Further, the pod transport mechanism 40 is moved above the delivery position of the load port 42 or the storage shelf 30 to be delivered. Here, the lowering of the stage 25 to the home position and the movement of the pod transport mechanism 40 may be performed simultaneously. After the pod transport mechanism 40 is moved above the delivery position of the load port 42 or the storage shelf 30 to be delivered, the elevating unit 40D is controlled, the holding unit 40C is lowered, and the pod 20 is placed on the stage 25 to be delivered. To do.
- the pod 20 can be directly delivered from the AGV port 22 to the load port 42. After confirming that the pod 20 is not placed on the load port 42, the stage 25 of the AGV port 22 is raised to the second height position. The stage 25 is moved horizontally (slid) to the upper portion of the placement portion of the load port 42, and the stage 25 is lowered in a state of being moved horizontally. After confirming that the pod 20 is placed on the load port 42, the stage 25 is moved horizontally to the placement position and lowered to the home position.
- the pod By driving the AGV port up and down, the pod can be delivered by raising the AGV port to a height position that does not interfere with the facing load port. As a result, the distance between the AGV port and the load port can be reduced, the installation area of the storage chamber can be reduced, and the footprint of the apparatus can be reduced. (2) By transporting the pod directly from the AGV port to the load port, it is possible to shorten the transport time and improve the throughput.
- a third embodiment will be described with reference to FIG.
- the difference from the above-described embodiment is that a fixed shelf 94 is installed in the pod transfer area 14 below the storage chamber 12. Elements that are substantially the same as those described in the above embodiment are given the same reference numerals, and descriptions thereof are omitted.
- the fixed shelf 94 is installed below the storage chamber 12 which is a position that does not interfere with the horizontal movement of the AGV port 22. Moreover, since the fixed shelf 94 is installed in the pod conveyance area
- HCDS gas in addition to HCDS gas, monochlorosilane (SiH 3 Cl, abbreviation: MCS) gas, dichlorosilane (SiH 2 Cl 2 , abbreviation: DCS) gas, trichlorosilane (SiHCl 3 , abbreviation: TCS) gas
- MCS monochlorosilane
- DCS dichlorosilane
- TCS trichlorosilane
- Inorganic halosilane source gases such as tetrachlorosilane, that is, silicon tetrachloride (SiCl 4 , abbreviation: STC) gas, octachlorotrisilane (Si 3 Cl 8 , abbreviation: OCTS) gas, and trisdimethylaminosilane (Si [N (CH 3 ) 2 ] 3 H, abbreviation: 3DMAS) gas, tetrakis
- the source gas contains no halogen group such as monosilane (SiH 4 , abbreviation: MS) gas, disilane (Si 2 H 6 , abbreviation: DS) gas, trisilane (Si 3 H 8 , abbreviation: TS) gas, etc.
- An inorganic silane source gas can be used.
- NH 3 gas is used as the reaction gas.
- the present invention is not limited to such an embodiment.
- hydrogen nitride-based gas such as diazene (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, N 3 H 8 gas, or a gas containing these compounds Etc. can be used.
- MEA gas such as ethylamine gas, trimethylamine ((CH 3 ) 3 N, abbreviation: TMA) gas, dimethylamine ((CH 3 ) 2 NH, abbreviation: DMA) gas, monomethylamine (CH 3 NH) 2 , abbreviation: MMA) methylamine gas such as gas
- an organic hydrazine-based gas such as trimethylhydrazine ((CH 3 ) 2 N 2 (CH 3 ) H, abbreviation: TMH) gas can be used.
- the SiN film is formed using HCDS gas as the source gas and nitrogen (N) -containing gas (nitriding gas) such as NH 3 gas as the reaction gas has been described.
- nitrogen (N) -containing gas such as NH 3 gas
- the present invention is not limited to such an embodiment.
- oxygen (O) containing gas oxygen (O 2 ) gas, carbon (C) containing gas such as propylene (C 3 H 6 ) gas, trichloride
- a boron (B) -containing gas such as boron (BCl 3 ) gas, etc.
- SiO film, SiON film, SiOCN film, SiOC film, SiCN film, SiBN film, SiBCN film, etc. can be formed.
- the order which flows each gas can be changed suitably. Even in the case where these films are formed, the film formation can be performed under the same processing conditions as in the above-described embodiment, and the same effect as in the above-described embodiment can be obtained.
- a silicon-based insulating film such as a SiN film is formed.
- the present invention is not limited to such an embodiment.
- titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W) are formed on the wafer W. Even when a film containing a metal element such as a metal film is formed, the present invention can be suitably applied.
- a film in which any of these elements is doped (added) with other elements for example, a TiAlN film, a TaAlN film, a TiAlC film, a TaAlC film, a TiSiN film, a TiSiC film, etc. is also suitably applied. Is possible.
- titanium tetrachloride (TiCl 4 ) gas, titanium tetrafluoride (TiF 4 ) gas, zirconium tetrachloride (ZrCl 4 ) gas, zirconium tetrafluoride (ZrF 4 ) are used as source gases.
- MoCl 5 Bed Den pentafluor
- an organic metal source gas containing carbon and a metal element such as trimethylaluminum (Al (CH 3 ) 3 , abbreviation: TMA) gas can be used.
- TMA trimethylaluminum
- the reaction gas the same gas as that in the above-described embodiment can be used.
- a TiN film, a TiO film, a TiON film, a TiCN film, a TiAlC film, a TiAlN film, a TiSiN film, or the like can be formed on the wafer W by the following film forming sequence.
- each gas flows can be changed as appropriate. Even in the case where these films are formed, the film formation can be performed under the same processing conditions as in the above-described embodiment, and the same effect as in the above-described embodiment can be obtained.
- the present invention can be suitably applied when forming a film containing a predetermined element such as a semiconductor element or a metal element.
- the present invention is not limited to such an embodiment.
- the present invention can also be suitably applied to a case where a process such as an oxidation process, a diffusion process, an annealing process, or an etching process is performed on the wafer W or a film formed on the wafer W.
- processing conditions at this time can be set to the same processing conditions as in the above-described embodiment or modification, for example.
- the footprint of the apparatus can be reduced.
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Abstract
Description
基板を収容する収納容器を載置する載置棚を備える収容室と、
前記収容室の天井部に設置され、前記収納容器の上部を把持して搬送する搬送機構と、
前記収容室に対して前記収納容器を搬入出するポートと、を備え、
前記ポートは、
基台上に固定された調整板と、
前記収納容器を載置するステージと
前記調整板の上部に設置され、前記ステージの下面後方と連結部材を介して連結され、前記ステージを水平移動させる水平駆動機構と、を有し、
前記水平駆動機構は、前記ステージの水平移動を補助し、一端が互いに連結された一対のガイド部と、前記ガイド部の間に設置され、前記ガイド部の連結部分を押圧する第1駆動部とにより構成される技術が提供される。
図1に示すように、本実施形態において、基板処理装置4は、ICの製造方法における熱処理工程を実施する縦型熱処理装置(バッチ式縦型熱処理装置)として構成されている。なお、本発明が適用される縦型熱処理装置では、基板としてのウエハWを搬送するキャリアとしてFOUP(Front Opening Unified Pod:以下、ポッドという。)20が使用されている。基板処理装置4は後述する処理炉8、収容室12、搬送室16を備える。
基板処理装置4の筐体内前側には、ポッド20を装置内に搬入し、収納する収容室12が配置されている。収容室12の筐体前側には、ポッド20を収容室12に対して搬入搬出するための開口である搬入出口22Aが収容室12の筐体内外を連通するように開設されている。搬入出口22Aはフロントシャッタによって開閉されるように構成されていても良い。搬入出口22Aの筐体内側にはAGVポート(I/Oステージ)22が設けられている。収容室12と搬送室16との間の壁面には、後述するロードポート42が設置されている。ポッド20はAGVポート22上に基板処理装置4外にある工程内搬送装置(工程間搬送装置)によって基板処理装置4内に搬入され、かつまた、AGVポート22上から搬出される。
収容室12の後方に隣接して搬送室16が構成されている。収容室12の搬送室16側には、ウエハWを搬送室16に対して搬入出するためのウエハ搬入出口が水平方向に複数並べられて開設されており、各ウエハ搬入出口に対してロードポート42がそれぞれ設置されている。ロードポート42は、ポッド20を載置する載置台42Bを水平移動させてウエハ搬入出口に押し当て、ポッド20の蓋を展開する。ポッド20の蓋が展開されると、基板移載機86によって、ポッド20内外への基板Wの搬送が行われる。
搬送室16の上方には処理炉8が設けられている。図3に示すように、処理炉8は加熱手段(加熱機構)としてのヒータ46を有する。ヒータ46は円筒形状であり、保持板としてのヒータベース(図示せず)に支持されることにより垂直に据え付けられている。ヒータ46は、後述するようにガスを熱で活性化(励起)させる活性化機構(励起部)としても機能する。
複数枚のウエハWがボート58に装填(ウエハチャージ)されると、ボート58は、ボートエレベータ82によって処理室54内に搬入(ボートロード)される。このとき、シールキャップ78は、Oリング78Aを介して反応管50の下端を気密に閉塞(シール)した状態となる。
処理室54内、すなわち、ウエハWが存在する空間が所定の圧力(真空度)となるように、真空ポンプ74によって真空排気(減圧排気)される。この際、処理室54内の圧力は、圧力センサ70で測定され、この測定された圧力情報に基づきAPCバルブ72が、フィードバック制御される。真空ポンプ74は、少なくともウエハWに対する処理が終了するまでの間は常時作動させた状態を維持する。
処理室54内の温度が予め設定された処理温度に安定すると、次の2つのステップ、すなわち、ステップ1~2を順次実行する。
このステップでは、処理室54内のウエハWに対し、HCDSガスを供給する。
ステップ1が終了した後、処理室54内のウエハW、すなわち、ウエハW上に形成された第1の層に対してNH3ガスを供給する。NH3ガスは熱で活性化されてウエハWに対して供給されることとなる。
上述した2つのステップを非同時に、すなわち、同期させることなく行うサイクルを所定回数(n回)行うことにより、ウエハW上に、所定組成および所定膜厚のSiN膜を形成することができる。なお、上述のサイクルは複数回繰り返すのが好ましい。すなわち、上述のサイクルを1回行う際に形成される第2の層(SiN層)の厚さを所定の膜厚よりも小さくし、第2の層(SiN層)を積層することで形成されるSiN膜の膜厚が所定の膜厚になるまで、上述のサイクルを複数回繰り返すのが好ましい。
処理温度(ウエハ温度):250~700℃、
処理圧力(処理室内圧力):1~4000Pa、
HCDSガス供給流量:1~2000sccm、
NH3ガス供給流量:100~10000sccm、
N2ガス供給流量:100~10000sccm、
が例示される。それぞれの処理条件を、それぞれの範囲内のある値に設定することで、成膜処理を適正に進行させることが可能となる。
成膜処理が完了した後、バルブ66bを開き、ガス供給管62bからN2ガスを処理室54内へ供給し、排気管68から排気する。N2ガスはパージガスとして作用する。これにより、処理室54内がパージされ、処理室54内に残留するガスや反応副生成物が処理室54内から除去される(パージ)。その後、処理室54内の雰囲気が不活性ガスに置換され(不活性ガス置換)、処理室54内の圧力が常圧に復帰される(大気圧復帰)。
ボートエレベータ82によりシールキャップ78が下降され、反応管50の下端が開口される。そして、処理済のウエハWが、ボート58に支持された状態で、反応管50の下端から反応管50の外部に搬出される(ボートアンロード)。処理済のウエハWは、ボート58より取出される(ウエハディスチャージ)。
(1)収容室を省スペース化することができ、基板処理装置のフットプリントを削減することが可能となる。
(2)収納容器の搬送スピードを向上させることができ、スループットを向上させ、生産性を向上させることが可能となる。
(1)AGVポートを上下駆動させるようにすることにより、対面するロードポートと干渉しない高さ位置まで上昇させてポッドを受渡しするようにすることが可能となる。これにより、AGVポートとロードポートとの距離を縮めることが可能となり、収容室の設置面積を縮小することができ、装置のフットプリントを低減させることができる。
(2)AGVポートからロードポートへ直接ポッドを搬送することにより、搬送に係る時間を短縮でき、スループットを向上させることができる。
12・・・収容室
26・・・水平駆動機構
40・・・ポッド搬送機構
90・・・昇降駆動機構
Claims (13)
- 基板を収容する収納容器を載置する載置棚を備える収容室と、
前記収容室の天井部に設置され、前記収納容器の上部を把持して搬送する搬送機構と、
前記収容室に対して前記収納容器を搬入出するポートと、を備え、
前記ポートは、
基台上に固定された調整板と、
前記収納容器を載置するステージと、
前記調整板の上部に設置され、前記ステージの下面後方と連結部材を介して連結され、前記ステージを水平移動させる水平駆動機構と、を有し、
前記水平駆動機構は、前記ステージの水平移動を補助し、一端が互いに連結された一対のガイド部と、前記ガイド部の間に設置され、前記ガイド部の連結部分を押圧する第1駆動部とにより構成される基板処理装置。 - 前記収納容器を載置する載置位置と、前記収納容器を前記搬送機構に受け渡す受渡し位置との間で前記ステージを水平移動させるよう前記水平駆動機構を制御するよう構成された制御部をさらに備える請求項1記載の基板処理装置。
- 前記調整板の上部には配置され、前記ステージの位置を検出する2つのセンサと、
前記ガイド部の他端に設置され、前記センサの検出部分を通過する検知部材と、をさらに有し、
2つの前記センサはそれぞれ前記載置位置と前記受渡し位置とを検出する請求項2記載の基板処理装置。 - 前記水平駆動機構は、
前記ガイド部の片方の内側両端に設置されたプーリと、
前記プーリに掛け渡され、前記連結部材と第1固定部を介して固定された伝達部と、
前記伝達部と前記調整板とを固定する第2固定部と、
をさらに有し、
前記ステージは、前記ガイド部によって水平移動されつつ、前記伝達部の回転によって水平移動される請求項1乃至3いずれかに記載の基板処理装置。 - 前記ステージは、前方先端に開口を有する請求項1乃至4のいずれかに記載の基板処理装置。
- 前記ポートは、前記基台を上下に移動させる上下移動機構をさらに備える請求項1乃至5いずれかに記載の基板処理装置。
- 前記上下移動機構は、
前記基台に接続されたシャフトと、
前記シャフトを上下に駆動する第2駆動部と、
を有する請求項6記載の基板処理装置。 - 前記ポートに対面して設置され、前記収納容器を開閉するロードポートをさらに有し、
前記ロードポートの載置部の位置は、前記ポートの受渡し位置と重なる請求項6または7記載の基板処理装置。 - 前記制御部は、前記ロードポート上に前記収納容器が載置されている時には、前記ロードポート上の前記収納容器と干渉しない第1の高さ位置まで前記基台を上昇させ、前記搬送機構を前記ステージの前記受渡し位置上方に移動させ、前記ステージを前記受渡し位置まで移動させ、前記収納容器の受渡しをするように前記水平駆動機構、前記上下移動機構および前記搬送機構とを制御するよう構成される請求項8記載の基板処理装置。
- 前記制御部は、前記ロードポート上に前記収容器が載置されていない場合には、前記第1の高さ位置よりも低い第2の高さ位置まで前記基台を上昇させ、前記搬送機構を前記ステージの前記受渡し位置上方に移動させ、前記ステージを前記受渡し位置まで移動させ、前記収納容器の受渡しをするように前記水平駆動機構、前記上下移動機構および前記搬送機構とを制御するよう構成される請求項8または9記載の基板処理装置。
- 前記制御部は、前記基台の上昇と前記搬送機構の移動とを同時に行うように前記上下動移動機構と前記水平駆動機構とを制御するよう構成される請求項9または10記載の基板処理装置。
- 前記制御部は、前記第2の高さ位置まで前記基台を上昇させ、前記ステージを前記ロードポートの載置部上部まで移動させ、前記基台を下降させて前記収納容器を前記ロードポートに載置し、前記ステージを前記載置位置まで移動させ、前記既倍を下降させるように前記水平駆動機構と前記上下移動機構を制御するよう構成される付記6乃至11いずれかに記載の基板処理装置。
- 基板を収容する収納容器を収納する収容室の天井部に設置された搬送機構によって前記収納容器をポートから載置棚へ搬送する工程と、
前記収容容器内の前記基板を処理室内に搬送する工程と、
前記処理室内で前記基板を処理する工程と、を有し、
前記ポートは、
基台上に固定された調整板と、
前記収納容器を載置するステージと、
前記調整板の上部に設置され、前記ステージの下面後方と連結部材を介して連結され、前記ステージを水平移動させる水平駆動機構と、を有し、
前記水平駆動機構は、前記ステージの水平移動を補助し、一端が互いに連結された一対のガイド部と、前記ガイド部の間に設置され、前記ガイド部の連結部分を押圧する駆動部と、を備え、
前記収納容器を搬送する工程では、前記ステージを水平移動させ、前記搬送機構を前記ステージ上に移動させ、前記収納容器の上部を把持して搬送する半導体装置の製造方法。
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US10529607B2 (en) | 2020-01-07 |
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