JPWO2017010011A1 - 半導体スイッチ装置 - Google Patents
半導体スイッチ装置 Download PDFInfo
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Abstract
Description
半導体スイッチ装置は、積層された複数の半導体スイッチチップ11及び制御チップ12を有する半導体スイッチ本体部10と、半導体スイッチ本体部10に接続された複数の信号入力端子20と、半導体スイッチ本体部10に接続された複数の信号出力端子30と、を備え、各々の信号入力端子20と各々の信号出力端子とは、半導体スイッチ本体部10を介して接続可能であり、各々の信号入力端子20と信号出力端子30との接続状態は、半導体スイッチ本体部10によって変更されるものである。そして、各々の半導体スイッチチップ11は、相互に接続可能な複数の入力側信号線14及び複数の出力側信号線15(複数のチップ内信号線)と、制御チップ12からの指示信号Rに応じて、複数のチップ内信号線間の接続状態を変更可能なスイッチ回路13と、複数の入力側信号線14及び複数の出力側信号線15に各々に接続された複数の非接触通信コイル16と、を有する。半導体スイッチチップ11の各々の非接触通信コイルは、他のいずれか1つ以上の半導体スイッチチップ11の非接触通信コイル16との間で、積層方向に非接触に通信が可能であり、各々の信号入力端子20及び各々の信号出力端子30は、いずれかの半導体スイッチチップ11のいずれかの複数の入力側信号線14及び複数の出力側信号線15に接続されており、各々の半導体スイッチチップ11のスイッチ回路13が、制御チップ12からの指示信号Rに応じて、複数の入力側信号線14及び複数の出力側信号線15の接続状態を変更することによって、各々の信号入力端子20と信号出力端子30との接続状態が変更される。
10 半導体スイッチ本体部
11 半導体スイッチチップ
11A 半導体基板部
11A1 半導体基板部主面
11B 絶縁層部
11B1 絶縁層部主面
11−1 第1半導体スイッチチップ
11−2 第2半導体スイッチチップ
11−3 第3半導体スイッチチップ
11−4 第4半導体スイッチチップ
11−5 第5半導体スイッチチップ
12 制御チップ(制御部)
13 スイッチ回路(接続状態変更部)
13−1 第1スイッチ回路(接続状態変更部)
13−2 第3スイッチ回路(接続状態変更部)
13−3 第3スイッチ回路(接続状態変更部)
13−4 第4スイッチ回路(接続状態変更部)
13−5 第5スイッチ回路(接続状態変更部)
14 入力側信号線
14−1 第1入力側信号線
14−2 第2入力側信号線
14−3 第3入力側信号線
14−4 第4入力側信号線
14−5 第5入力側信号線
15 出力側信号線
15−1 第1出力側信号線
15−1 第2出力側信号線
15−1 第3出力側信号線
15−1 第4出力側信号線
15−1 第5出力側信号線
16 非接触通信コイル(非接触通信部)
16−1 第1非接触通信コイル(非接触通信部)
16−2 第2非接触通信コイル(非接触通信部)
16−3 第3非接触通信コイル(非接触通信部)
16−4 第4非接触通信コイル(非接触通信部)
16−5 第5非接触通信コイル(非接触通信部)
20 信号入力端子
20−1 第1信号入力端子(第1端子)
20−2 第2信号入力端子(第1端子)
20−3 第3信号入力端子(第1端子)
20−4 第4信号入力端子(第1端子)
20−5 第5信号入力端子(第1端子)
30 信号出力端子
30−1 第1信号出力端子(第2端子)
30−2 第2信号出力端子(第2端子)
30−3 第3信号出力端子(第2端子)
30−4 第4信号出力端子(第2端子)
30−5 第5信号出力端子(第2端子)
X 積層方向
R 指示信号
Claims (7)
- 積層された複数の半導体スイッチチップ及び制御部を有する半導体スイッチ本体部と、前記半導体スイッチ本体部に接続された複数の第1端子と、前記半導体スイッチ本体部に接続された複数の第2端子と、を備え、各々の前記第1端子と各々の前記第2端子とは、前記半導体スイッチ本体部を介して接続可能であり、各々の前記第1端子と各々の前記第2端子との接続状態は、前記半導体スイッチ本体部によって変更される半導体スイッチ装置であって、
各々の前記半導体スイッチチップは、相互に接続可能な複数のチップ内信号線と、前記制御部からの指示に応じて、前記複数のチップ内信号線間の接続状態を変更可能な接続状態変更部と、前記複数のチップ内信号線に各々に接続された複数の非接触通信部と、を有し、
各々の前記半導体スイッチチップの各々の前記非接触通信部は、他のいずれか1つ以上の前記半導体スイッチチップの前記非接触通信部との間で、積層方向に非接触に通信が可能であり、
各々の前記第1端子及び各々の前記第2端子は、いずれかの前記半導体スイッチチップのいずれかの前記チップ内信号線に接続されており、
各々の前記半導体スイッチチップの前記接続状態変更部が、前記制御部からの指示に応じて、前記複数のチップ内信号線間の接続状態を変更することによって、前記複数の第1端子と前記複数の第2端子との接続状態が変更される半導体スイッチ装置。 - 前記半導体スイッチチップの1つの前記非接触通信部は、積層方向に隣接する前記半導体スイッチチップの前記非接触通信部であって積層方向に重なる前記非接触通信部と、積層方向に非接触に通信する請求項1に記載の半導体スイッチ装置。
- 前記半導体スイッチチップの1つの前記非接触通信部は、積層方向に隣接しない前記半導体スイッチチップの前記非接触通信部であって積層方向に重なる前記非接触通信部と、積層方向に非接触に通信する請求項1に記載の半導体スイッチ装置。
- 前記半導体スイッチチップの1つの前記非接触通信部は、積層方向に隣接する少なくとも一方の前記半導体スイッチチップの前記非接触通信部とは、積層方向に重ならない請求項3に記載の半導体スイッチ装置。
- 前記半導体スイッチチップにおいて、一部の前記非接触通信部は、積層方向に、前記接続状態変更部と重なるように配置されている請求項1に記載の半導体スイッチ装置。
- 前記非接触通信部は、コイルである請求項1から5のいずれかの請求項に記載の半導体スイッチ装置。
- 前記半導体スイッチチップの1つの前記非接触通信部は、積層方向に隣接する前記半導体スイッチチップの前記非接触通信部であって積層方向に重なる前記非接触通信部と、積層方向に非接触に通信する隣接用非接触通信コイルであり、
前記半導体スイッチチップの1つの前記非接触通信部は、積層方向に隣接しない前記半導体スイッチチップの前記非接触通信部であって積層方向に重なる前記非接触通信部と、積層方向に非接触に通信する非隣接用非接触通信コイルであり、
隣接通信用非接触通信コイルによって形成される磁束密度は、非隣接通信用非接触通信コイルによって形成される磁束密度よりも小さい請求項1に記載の半導体スイッチ装置。
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EP (1) | EP3324428B1 (ja) |
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JP2011097557A (ja) * | 2009-05-26 | 2011-05-12 | Murata Mfg Co Ltd | 高周波スイッチモジュール |
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JP2011204821A (ja) * | 2010-03-25 | 2011-10-13 | Nec Corp | 半導体装置 |
JP2011233842A (ja) * | 2010-04-30 | 2011-11-17 | Toshiba Corp | 不揮発性半導体記憶装置 |
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