JPWO2016194876A1 - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
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- JPWO2016194876A1 JPWO2016194876A1 JP2017521938A JP2017521938A JPWO2016194876A1 JP WO2016194876 A1 JPWO2016194876 A1 JP WO2016194876A1 JP 2017521938 A JP2017521938 A JP 2017521938A JP 2017521938 A JP2017521938 A JP 2017521938A JP WO2016194876 A1 JPWO2016194876 A1 JP WO2016194876A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
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- 238000007789 sealing Methods 0.000 claims abstract description 55
- 239000002245 particle Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 9
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- 238000000151 deposition Methods 0.000 claims description 2
- 230000005284 excitation Effects 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 description 22
- 239000000463 material Substances 0.000 description 5
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- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
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- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 229910015802 BaSr Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 229920000647 polyepoxide Polymers 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (4)
- 基板と、
発光面を前記基板とは反対側に向けて、前記基板上に密集して実装された複数の発光素子と、
前記複数の発光素子からの光により励起される複数種類の蛍光体を前記複数の発光素子の上面に堆積した状態で含有し、前記複数の発光素子の全体を封止する封止樹脂と、を有し、
隣接する前記発光素子同士の間隔は、5μm以上であり、かつ前記複数種類の蛍光体のうちで平均粒径が最大である蛍光体のメジアン径D50の120%以下の長さである、
ことを特徴とする発光装置。 - 前記メジアン径D50は20μm以上かつ25μm以下である、請求項1に記載の発光装置。
- 前記封止樹脂を覆うように前記基板上に載置された光学素子をさらに有する、請求項1または2に記載の発光装置。
- 発光面を基板とは反対側に向けて、前記基板上に密集して複数の発光素子を実装する工程と、
前記複数の発光素子からの光により励起される複数種類の蛍光体を含有する封止樹脂で前記複数の発光素子の全体を封止する工程と、
前記複数種類の蛍光体を前記封止樹脂内で自然沈降させ、前記複数の発光素子の上面に堆積させてから前記封止樹脂を硬化させる工程と、を有し、
前記実装する工程では、隣接する発光素子同士の間隔が5μm以上でありかつ前記複数種類の蛍光体のうちで平均粒径が最大である蛍光体のメジアン径D50の120%以下の長さになるように、前記複数の発光素子を実装する、
ことを特徴とする発光装置の製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015110489 | 2015-05-29 | ||
JP2015110489 | 2015-05-29 | ||
JPPCT/JP2016/053839 | 2016-02-09 | ||
PCT/JP2016/053839 WO2016194405A1 (ja) | 2015-05-29 | 2016-02-09 | 発光装置およびその製造方法 |
PCT/JP2016/065931 WO2016194876A1 (ja) | 2015-05-29 | 2016-05-30 | 発光装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016194876A1 true JPWO2016194876A1 (ja) | 2018-03-15 |
JP6700265B2 JP6700265B2 (ja) | 2020-05-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017521938A Active JP6700265B2 (ja) | 2015-05-29 | 2016-05-30 | 発光装置およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10629786B2 (ja) |
JP (1) | JP6700265B2 (ja) |
CN (1) | CN107615496A (ja) |
WO (1) | WO2016194405A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180090002A (ko) * | 2017-02-02 | 2018-08-10 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
CN110391321B (zh) * | 2018-04-19 | 2021-05-28 | 展晶科技(深圳)有限公司 | 发光二极管封装体及其制造方法 |
KR20230023834A (ko) * | 2020-12-09 | 2023-02-20 | 주식회사 솔루엠 | 에어포켓 방지 기판, 에어포켓 방지 기판 모듈, 이를 포함하는 전기기기 및 이를 포함하는 전기기기의 제조 방법 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009123758A (ja) * | 2007-11-12 | 2009-06-04 | Yamaguchi Univ | 照明装置 |
JP2011151268A (ja) * | 2010-01-22 | 2011-08-04 | Sharp Corp | 発光装置 |
US8052307B2 (en) * | 2009-11-19 | 2011-11-08 | Lg Innotek Co., Ltd. | Lens and light emitting apparatus having the same |
WO2012091008A1 (ja) * | 2010-12-28 | 2012-07-05 | 日亜化学工業株式会社 | 半導体発光装置 |
US20130020590A1 (en) * | 2011-07-21 | 2013-01-24 | Shaow Lin | Light emitting devices and components having excellent chemical resistance and related methods |
JP2013153134A (ja) * | 2011-12-26 | 2013-08-08 | Nichia Chem Ind Ltd | 発光装置の製造方法 |
US20130207130A1 (en) * | 2012-02-13 | 2013-08-15 | Jesse Colin Reiherzer | Light emitter devices having improved light output and related methods |
JP2014027156A (ja) * | 2012-07-27 | 2014-02-06 | Citizen Holdings Co Ltd | Ledパッケージ |
JP2014138185A (ja) * | 2013-01-18 | 2014-07-28 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
US8858022B2 (en) * | 2011-05-05 | 2014-10-14 | Ledengin, Inc. | Spot TIR lens system for small high-power emitter |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2950714B2 (ja) * | 1993-09-28 | 1999-09-20 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
JP2002344029A (ja) * | 2001-05-17 | 2002-11-29 | Rohm Co Ltd | 発光ダイオードの色調調整方法 |
JP2006005290A (ja) | 2004-06-21 | 2006-01-05 | Citizen Electronics Co Ltd | 発光ダイオード |
CN102800786B (zh) * | 2006-04-24 | 2015-09-16 | 克利公司 | 发光二极管和显示元件 |
JP4984824B2 (ja) * | 2006-10-26 | 2012-07-25 | 豊田合成株式会社 | 発光装置 |
JP5158472B2 (ja) * | 2007-05-24 | 2013-03-06 | スタンレー電気株式会社 | 半導体発光装置 |
CN101598312A (zh) * | 2008-06-06 | 2009-12-09 | 富准精密工业(深圳)有限公司 | 发光二极管结构 |
JP5266075B2 (ja) | 2009-01-26 | 2013-08-21 | パナソニック株式会社 | 電球形照明装置 |
WO2011021402A1 (ja) * | 2009-08-21 | 2011-02-24 | パナソニック株式会社 | 発光装置 |
JP2012044048A (ja) | 2010-08-20 | 2012-03-01 | Sharp Corp | 発光素子パッケージの製造方法及び発光素子パッケージ |
JP6187277B2 (ja) * | 2014-01-21 | 2017-08-30 | 豊田合成株式会社 | 発光装置及びその製造方法 |
-
2016
- 2016-02-09 WO PCT/JP2016/053839 patent/WO2016194405A1/ja active Application Filing
- 2016-05-30 JP JP2017521938A patent/JP6700265B2/ja active Active
- 2016-05-30 US US15/577,714 patent/US10629786B2/en active Active
- 2016-05-30 CN CN201680031129.6A patent/CN107615496A/zh active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009123758A (ja) * | 2007-11-12 | 2009-06-04 | Yamaguchi Univ | 照明装置 |
US8052307B2 (en) * | 2009-11-19 | 2011-11-08 | Lg Innotek Co., Ltd. | Lens and light emitting apparatus having the same |
JP2011151268A (ja) * | 2010-01-22 | 2011-08-04 | Sharp Corp | 発光装置 |
WO2012091008A1 (ja) * | 2010-12-28 | 2012-07-05 | 日亜化学工業株式会社 | 半導体発光装置 |
US8858022B2 (en) * | 2011-05-05 | 2014-10-14 | Ledengin, Inc. | Spot TIR lens system for small high-power emitter |
US20130020590A1 (en) * | 2011-07-21 | 2013-01-24 | Shaow Lin | Light emitting devices and components having excellent chemical resistance and related methods |
JP2013153134A (ja) * | 2011-12-26 | 2013-08-08 | Nichia Chem Ind Ltd | 発光装置の製造方法 |
US20130207130A1 (en) * | 2012-02-13 | 2013-08-15 | Jesse Colin Reiherzer | Light emitter devices having improved light output and related methods |
JP2014027156A (ja) * | 2012-07-27 | 2014-02-06 | Citizen Holdings Co Ltd | Ledパッケージ |
JP2014138185A (ja) * | 2013-01-18 | 2014-07-28 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
Also Published As
Publication number | Publication date |
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JP6700265B2 (ja) | 2020-05-27 |
CN107615496A (zh) | 2018-01-19 |
WO2016194405A1 (ja) | 2016-12-08 |
US10629786B2 (en) | 2020-04-21 |
US20180158998A1 (en) | 2018-06-07 |
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