CN101598312A - 发光二极管结构 - Google Patents

发光二极管结构 Download PDF

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CN101598312A
CN101598312A CNA2008100676729A CN200810067672A CN101598312A CN 101598312 A CN101598312 A CN 101598312A CN A2008100676729 A CNA2008100676729 A CN A2008100676729A CN 200810067672 A CN200810067672 A CN 200810067672A CN 101598312 A CN101598312 A CN 101598312A
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pedestal
heat dissipation
dissipation channel
emitting diode
projection
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张家寿
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Priority to CNA2008100676729A priority Critical patent/CN101598312A/zh
Priority to US12/185,124 priority patent/US20090302337A1/en
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Abstract

一种发光二极管结构，包括一基座、安装于基座上表面的至少一发光二极管芯片及保护所述发光二极管芯片的一封装体，基座上设有沿基座的厚度方向延伸的若干第一散热通道及至少一第二散热通道，所述第一散热通道靠近基座的上表面，所述第二散热通道靠近基座的下表面，且所述第一散热通道于基座的下表面上的投影与第二散热通道于基座的下表面上的投影不重合，所述第一散热通道与第二散热通道内填充有散热柱。

Description

发光二极管结构
技术领域
本发明涉及一种发光二极管结构。
背景技术
发光二极管(Light Emitting Diode)是利用半导体材料中的电子与空穴结合时能量带位阶的改变，以发光的形式释放出能量。由于发光二极管具有体积小、寿命长、驱动电压低、反映速度快、耐震性佳等优点，已被广泛地应用在广告板、交通标志、日常照明等各种领域中。
图1所示为一种典型的发光二极管结构，包括基座10，位于基座10上的发光二极管阵列12及包围该发光二极管阵列12外围的封胶体14。每一发光二极管通过导线13与基座10上的导电组件(图未示)电连接。该基座10呈平板状，发光二极管所产生的热量首先通过该基座10散发。
通常，发光二极管发光时所消耗的能量仅大约10～20％被转换成光能，而其余的能量被转换成热量，这些热量必须及时疏散掉以保证发光二极管的正常工作。该发光二极管结构中，由于每一发光二极管与基座之间的接触面积小，工作时，每一发光二极管所产生的热量首先被集中在该接触区域，由于该基座受制于材料本身有限的热传导性，热量沿基座的水平方向热传递效果较差，热量来不及传递到基座的其余部分进行均匀地散发，而于基座上与每一发光二极管相对应的接触区域分别形成热量集中区域，即形成热点(hotspot)。因此，该发光二极管结构的散热效果不佳，进而影响发光二极管的发光效率与寿命。
发明内容
有鉴于此，有必要提供一种具有较好散热性能的发光二极管结构。
一种发光二极管结构，包括一基座、安装于基座上表面的至少一发光二极管芯片及保护所述发光二极管芯片的一封装体，基座上设有沿基座的厚度方向延伸的若干第一散热通道及至少一第二散热通道，所述第一散热通道靠近基座的上表面，所述第二散热通道靠近基座的下表面，且所述第一散热通道于基座的下表面上的投影与第二散热通道于基座的下表面上的投影不重合，所述第一散热通道与第二散热通道内填充有散热柱。
与现有技术相比，该发光二极管结构通过于基座上设置若干第一散热通道及第二散热通道，所述第一散热通道于基座的下表面上的投影与第二散热通道于基座的下表面上的投影不重合，即第一散热通道与第二散热通道于基座内分别交错设置，且散热通道内填充有散热柱，利用该散热柱将热量均匀分布于该基座内并迅速对外散发，从而防止基座上与发光二极管芯片接触的相对应位置处形成热点(hot spot)。
附图说明
图1为一种典型的发光二极管结构的示意图。
图2为本发明第一实施例中发光二极管结构的俯视示意图。
图3为图2沿III-III线的剖示图。
图4为本发明第二实施例中发光二极管结构的俯视示意图。
图5为图4沿V-V线的剖示图。
图6为本发明第三实施例中发光二极管结构的俯视示意图。
图7为图6沿VII-VII线的剖示图。
具体实施方式
下面参照附图，结合具体实施例对本发明作进一步的描述。
图2及图3所示为本发明第一实施例中发光二极管结构的示意图。该发光二极管结构包括一基座20、安装于基座20上的一发光二极管阵列30、保护该发光二极管阵列30的透明封装体40及罩设于该封装体40上方的一透镜50。
该发光二极管阵列30包括呈矩阵分布的若干发光二极管芯片31。每一发光二极管芯片31与该基座20上的导电组件(图未示)电性连接以便使发光二极管芯片31可以与外部电源等电性连接。本实施例中，四个发光二极管芯片31形成沿基座20横向排列的一列，且四个发光二极管芯片31形成沿基座20纵向排列的一行。
该基座20包括相互贴合的第一基座21与第二基座22。所述发光二极管芯片31布设于该第一基座21的上表面。该第一基座21于每一发光二极管芯片31的四周设有四个第一散热通道211(图3仅示出每一发光二极管芯片31左右两侧的第一散热通道211)。该第一散热通道211沿基座20的厚度方向贯穿第一基座21，从该第一基座21的上表面向下延伸至其下表面。该第一散热通道211内填充有散热柱212。该散热柱212为内部形成有大量孔隙的多孔性柱状结构。散热柱212可为由热传导系数较高的材料，如铜或铝等制成的发泡金属柱体，或者为由金属粉末通过烧结制成的多孔性柱体。由于该散热柱212的内部形成大量孔隙，可以增加其与空气的接触面积，减小热阻，提高该第一基座21的上表面与下表面之间的热对流性能。
该第二基座22的上表面与第一基座21的下表面相互紧贴，第一基座21与第二基座22之间可以涂布导热胶等热界面材料，以填充两者之间的空气间隙，增加热传递效率。该第二基座22内对应每一发光二极管芯片31设有沿基座20的厚度方向贯穿第二基座22的一个第二散热通道221，该第二散热通道221与所述第一散热通道211不连通，即第一散热通道211与第二散热通道221之间相互错开，使第二散热通道221于基座20的下表面上的投影与所述第一散热通道211于基座20的下表面上的投影不重合。所述第一散热通道211于基座20的下表面上的投影位于发光二极管芯片31于基座20的下表面上的投影的周围，所述第二散热通道221于基座20的下表面上的投影相对于每一第一散热通道211于基座20的下表面上的投影更靠近发光二极管芯片31于基座20的下表面上的投影。本实施例中，第二散热通道221大致位于对应的发光二极管芯片31的正下方，每一第二散热通道221于基座20的下表面上投影与对应的发光二极管芯片31于基座20的下表面上的投影相重合，且位于相邻的两个第一散热通道211之间。该第二散热通道221内亦填充有散热柱212。所述第一基座21与第二基座22均可以由环氧树脂、玻璃纤维、氧化钛、氧化钙、或陶瓷等制成。
该封装体40将该发光二极管阵列30包覆在内，可防止该发光二极管芯片31受到外力冲击等损坏。形成该封装体40的材料可以为环氧树脂、硅胶、聚酰亚胺、或压克力等。该封装体40的内壁为斜向上及向外倾斜的反射性内表面41。该封装体40的上表面向内凹陷形成一可恰好收容透镜50的空间。
该透镜50为一凸透镜，该透镜50的下表面与封装体40的上表面相互贴合。该透镜50可以对发光二极管芯片31射出封装体40的光线聚光，提高发光二极管芯片31的光利用率。
工作时，发光二极管芯片31产生热量并将热量传递至下方的第一基座21，热量首先集中在第一基座21与每一发光二极管芯片31接触的区域，并从该每一接触的区域逐渐沿水平方向向第一基座21的其余部分传递，同时沿竖直方向向下方的第二基座22传递。由于该第一基座21内与每一发光二极管芯片31相邻的地方均设有散热柱212，使每一接触区域的热量可快速传递至散热柱212处，并沿散热柱212迅速向下传递，从而使热量可迅速且均匀地传递至下方的第二基座22，提高该第一基座21的上表面与下表面之间的热传递性能。
该第二基座22具有与第一基座21相似的散热效果，由于第二基座22内的散热柱212大致位于第一发光二极管芯片31的正下方，即位于该第一基座21上每一接触区域的正下方，热量直接向下传递至第二基座22后可进一步利用该第二基座22上的散热柱212的高热传递性能迅速向下传递并对外散发；另外，由于每一第二散热通道221于基座20的下表面上的投影与第一散热通道211于基座20的下表面上的投影不重合，第二散热通道221与第一散热通道211不连通，有利于热量从第一基座21的散热柱212向下传递后再沿水平方向向第二基座22的散热柱212处传递，从而使热量可大致均匀地分布于第二基座22内并对外散发。该基座20可以较好地解决发光二极管结构中的热点问题，具有较好的散热性能。
所述第一基座21与第二基座22也可以一体成型为一个基座，此时，所述第一散热通道211沿基座20的厚度方向设于该基座的上半部分，所述第二散热通道221沿基座20的厚度方向设于基座的下半部分，所述第一散热通道211的下端与第二散热通道221的上端平齐。可以理解地，所述第一散热通道211的下端与第二散热通道221的上端也可以不平齐，即第一散热通道211的下端低于第二散热通道221的上端，或者第一散热通道211的下端高于第二散热通道221的上端。
该第一散热通道211与第二散热通道221于基座20内相互交错设置时可以有多种方式。如图4及图5所示为本发明第二实施例中发光二极管结构的示意图，其与上述第一实施例不同的是：该第一基座21a于每一发光二极管芯片31的周围设有相互均匀间隔的六个第一散热通道211a。本实施例中，该每一第二散热通道221于基座20a的下表面上的投影与所述第一散热通道211a于基座20a的下表面上的投影不重合，即所述第二散热通道221与第一散热通道211a不连通。工作时，发光二极管芯片31所产生的热量通过第一散热通道211a与第二散热通道221首先迅速均匀分布于该第一基座21a与第二基座22内再对外散发，该基座20a具有较好的散热效果。
如图6及图7所示为本发明第三实施例中发光二极管结构的示意图，其与上述第一实施例不同的是：该第一基座21b于每一发光二极管芯片31的周围设有相互均匀间隔的六个第一散热通道211b，该第二基座22b于邻近每一发光二极管芯片31正下方的位置设有相互毗邻在一起的四个第二散热通道221b，该四个第二散热通道221b位于对应的发光二极管芯片31的正下方。该第二散热通道221b与第一散热通道211b不连通，即该每一第二散热通道221b于基座20b的下表面上的投影与所述第一散热通道211b于基座20b的下表面上的投影不重合。且所述第二散热通道221b于基座20b的下表面上的投影相对于第一散热通道211b于基座20b的下表面上的投影更靠近该对应的发光二极管芯片31于基座20b的下表面上的投影，即靠近该第一基座21b与每一发光二极管芯片31所形成的每一接触区域。

Claims (10)

1.一种发光二极管结构，包括一基座、安装于基座上表面的至少一发光二极管芯片及保护所述发光二极管芯片的一封装体，其特征在于：基座上设有沿基座的厚度方向延伸的若干第一散热通道及至少一第二散热通道，所述第一散热通道靠近基座的上表面，所述第二散热通道靠近基座的下表面，且所述第一散热通道于基座的下表面上的投影与第二散热通道于基座的下表面上的投影不重合，所述第一散热通道与第二散热通道内填充有散热柱。
2.如权利要求1所述的发光二极管结构，其特征在于：所述第一散热通道于基座的下表面上的投影位于发光二极管芯片于基座的下表面上的投影的周围，所述第二散热通道于基座的下表面上的投影与所述发光二极管芯片于基座的下表面上的投影相重合。
3.如权利要求1所述的发光二极管结构，其特征在于：所述第一散热通道于基座的下表面上的投影位于发光二极管芯片于基座的下表面上的投影的周围，所述第二散热通道于基座的下表面上的投影相对每一第一散热通道于基座的下表面上的投影更靠近所述发光二极管芯片于基座的下表面上的投影。
4.如权利要求1所述的发光二极管结构，其特征在于：所述第一散热通道位于基座的上半部分，所述第二散热通道位于基座的下半部分。
5.如权利要求1所述的发光二极管结构，其特征在于：所述基座包括第一基座及贴设于该第一基座下方的第二基座，所述第一散热通道设于第一基座内，第二散热通道设于第二基座内。
6.如权利要求5所述的发光二极管结构，其特征在于：所述第一散热通道贯穿该第一基座，所述第二散热通道贯穿该第二基座。
7.如权利要求1所述的发光二极管结构，其特征在于：所述散热柱为内部形成有大量孔隙的多孔性结构。
8.如权利要求7所述的发光二极管结构，其特征在于：所述散热柱为发泡金属。
9.如权利要求7所述的发光二极管结构，其特征在于：所述散热柱由金属粉末烧结而成。
10.如权利要求1所述的发光二极管结构，其特征在于：所述第一散热通道相互间隔设置，所述第二散热通道的数量为多个且相互毗邻地设置在一起，且所述第一散热通道于基座的下表面上的投影位于所述第二散热通道于基座的下表面上的投影的周围。
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