CN101546754A - 发光二极管模组 - Google Patents

发光二极管模组 Download PDF

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CN101546754A
CN101546754A CN200810066349A CN200810066349A CN101546754A CN 101546754 A CN101546754 A CN 101546754A CN 200810066349 A CN200810066349 A CN 200810066349A CN 200810066349 A CN200810066349 A CN 200810066349A CN 101546754 A CN101546754 A CN 101546754A
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heat
emitting diode
chip
light
conducting plate
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古金龙
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/648Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F21S2/005Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00Planar light sources
    • F21Y2105/10Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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Abstract

一种发光二极管模组,其包括一导热板及若干安装于导热板上的发光二极管,每一发光二极管包括一发光二极管芯片、一环绕芯片的基座及一结合至基座且包封住芯片的封胶,该芯片通过一层导热胶直接粘结于导热板上。本发明的发光二极管模组的发光二极管芯片通过导热胶直接粘结至导热板上,大大缩短了芯片至导热板间的导热路径。因此,芯片所产生的热量可通过导热胶及时地传输至导热板上,使芯片工作在其正常的温度范围之内。

Description

发光二极管模组
技术领域
本发明涉及一种发光二极管模组,特别是指一种散热效率较高的发光二极管模组。
背景技术
随着发光效率的提升,发光二极管已被越来越广泛地应用到各个领域当中,如住宅照明灯、工业照明灯及交通指示灯等等。在这些应用当中,通常将大量的发光二极管串接到多块电路板上,以便将电流同时输入进这些发光二极管内,进而驱动其发出光线。但是,由于电路板的传热能力有限,发光二极管工作产生的大量热量将难以通过电路板及时地散发出去,从而影响发光二极管的发光效率。
为此,相关厂商设计出了各种解决方案,如美国Koninklijke Philips公司在美国专利第US 6,392,778 B1号所揭示的一种发光二极管灯具,其包括一金属散热器及若干安装于散热器表面的发光二极管。该散热器的安装面上依次形成一绝缘层及一导电层,以将电路板和散热器合并为一体,从而获得一具有良好散热能力的电路板。绝缘层及导电层均被相应的沟槽分隔成若干相互隔离的部分,以裸露出散热器表面。发光二极管的基座通过导热胶黏结至裸露的散热器表面,以将发光二极管产生的热量传导至散热器上,确保发光二极管的正常运作。
但是,该种类型的发光二极管模组受其结构影响,散热效率有限。由于热量在从芯片至散热器间的传输过程中需经过位于芯片及散热器间的基座,导致芯片至散热器间的导热路径较长,热量无法快速地从芯片传递至散热器上。如若基座的导热效果不佳,其对于热量传输的影响更甚:大部分的热量将被基座阻隔在芯片内而无法及时散发出去,致使芯片的温度急剧升高,严重影响到芯片的发光效率。
发明内容
有鉴于此,实有必要提供一种可快速散热的发光二极管模组。
一种发光二极管模组,其包括一导热板及若干安装于导热板上的发光二极管,每一发光二极管包括一发光二极管芯片、一环绕芯片的基座及一结合至基座且包封住芯片的封胶,该芯片通过一层导热胶直接粘结于导热板上。
与现有技术相比,本发明的发光二极管模组的发光二极管芯片通过导热胶直接粘结至导热板上,大大缩短了芯片至导热板间的导热路径。因此,芯片所产生的热量可通过导热胶及时地传输至导热板上,确保芯片在其正常的温度范围之内稳定地工作。
下面参照附图,结合具体实施例对本发明作进一步的描述。
附图说明
图1是本发明第一实施例的发光二极管模组中的发光二极管组合的立体组装图。
图2是图1的俯视图。
图3是图1的仰视图。
图4是图1中的单个发光二极管的立体图,其中该发光二极管的透镜被移去以方便观察其内部结构。
图5是图4的俯视图。
图6是图4的仰视图。
图7是图4的侧视图。
图8是图1的侧视图,此时发光二极管模组中的导热板设置于发光二极管组合下方。
图9是本发明第二实施例的发光二极管模组的纵向剖视图。
图10是与图9相似的视图,但其导热板内填充有工作流体。
图11是与图10相似的视图,但其导热板的顶部形成一容置芯片的开孔。
具体实施方式
请参阅图1及图8,本发明的发光二极管模组包括一导热板10及一固设于导热板10上的发光二极管组合200。
导热板10为一实心的板体,其由热导性良好的金属材料制成,如铜、铝或二者的合金。导热板10的顶部形成一平坦的表面,供发光二极管组合200贴合。
请一并参阅图4,发光二极管组合200由若干发光二极管20彼此焊接而成。每一发光二极管20包括一正六边形的基座22、一粘接于基座22上的发光二极管芯片23、二分别插设于基座22相对两侧的第一引脚24及第二引脚26及一固定至基座22上且包封住芯片23的封胶29(如图1)。
请一并参阅图5至图7,基座22由陶瓷制成,可以理解地,基座22还可采用现有技术中其他导热且绝缘的材料制成,以在传输芯片23热量的同时对第一引脚24及第二引脚26绝缘。该基座22的顶面的中部区域向下凹陷出一正六边形的凹槽220,用于容置芯片23。该凹槽220的内径小于基座22的外径,由此,基座22环绕凹槽220的外侧部分形成一环形的台阶222,以供第一引脚24及第二引脚26插设。三扣脚28自基座22的外侧面一体向外辐射而出,每一扣脚28包括一矩形的横梁280及一形成于横梁280末端的梯形的扣合部282(如图6),其中扣合部282用于嵌入相邻的发光二极管20的基座22内,横梁280则用于将相邻的发光二极管20隔开。该三扣脚28的底面均与基座22的底面共面,并与导热板10的顶面接触(如图8),以将基座22所吸收的热量散布至导热板10上;这些扣脚28的顶面设置为低于第一引脚24及第二引脚26的底面,以与第一引脚24及第二引脚26隔开距离(如图7)。请一并参阅图3及图6,三缺口224相对于三扣脚28交替地环设于基座22的底面周缘,其中每一缺口224均呈梯形,且向外贯穿基座22的外侧面,以收容相邻发光二极管20的相应扣脚28的扣合部282,从而将这些发光二极管20扣接成一整体。
请再一并参阅图2,第一引脚24及第二引脚26均为完全平行于导热板10的金属片,其相对设置于靠近基座22的顶面,以与导热板10隔开距离。每一第一引脚24及第二引脚26均包括一穿设于台阶222内的固定部240、260及一自固定部240、260水平向外延伸的矩形的连接部242、262(如图5),其中连接部242、262的尺寸远小于固定部240、260的尺寸。每一固定部240、260的内侧部分呈弧形,其暴露于凹槽220的底部,且通过金线(图未示)连接至芯片23的正负电极(图未示),以实现每一发光二极管20内部的电气连接;每一固定部240、260的外侧部分呈矩形,其略微凸伸出基座22的外侧面,以增加第一引脚24及第二引脚26的机械稳定性。这些连接部242、262通过相应的固定部240、260悬设于导热板10的上方(如图8),以避免与导热板10直接接触。第一引脚24的连接部242的末端开设一大致呈圆形的凹部244,第二引脚26的连接部262的末端则水平向外凸伸出一大致呈圆形的凸片264。如图2所示,该凹部244用于收容一相邻发光二极管20的第二引脚26的凸片264,而该凸片264则用于嵌入另一相邻发光二极管20的第一引脚24的凹部244内,从而实现这些发光二极管20间的外部电气连接。该凹部244的深度大于凸片264的厚度,当凸片264容置于凹部244内时,凹部244的内周面与凸片264的顶面将共同形成一较浅的凹坑248(如图1),以在焊接相邻发光二极管20的第一引脚24及第二引脚26时容置多余的焊料。
如图1所示,所述封胶29呈半球形,其由透明的绝热性材料制成,如环氧树脂或硅胶。该封胶29用于将芯片23所发出的光线会聚至一预设的光束内,从而实现对外部的照明。
请一并参阅图1-4,组装该发光二极管模组时,首先将每一发光二极管20的三扣脚28的扣合部282扣入相邻三发光二极管20的基座22的三缺口224内,并使该每一发光二极管20的三缺口224收容另外三相邻发光二极管20的三扣合部282,由此完成发光二极管组合200的机械连接;与此同时,将该每一发光二极管20的第二引脚26的凸片264嵌入一相邻的发光二极管20的第一引脚24的凹部244内,并使该每一发光二极管20的第一引脚24的凹部244容置另一相邻的发光二极管20的第二引脚26的凸片264,由此完成发光二极管组合200的电气连接。然后,将已组装好的发光二极管组合200固定至导热板10上,以构成完整的发光二极管模组。最后,焊接相邻发光二极管20的第一引脚24及第二引脚26,使其相互间稳定连接。
可以理解地,为使芯片23所产生的热量可快速传输至导热板10上,上述实施例中的发光二极管20的构造可作相应的变化。请参阅图9,示出了本发明的第二实施例。本实施例与上一实施例的主要区别在于发光二极管20g的芯片23g通过厚度小于1毫米的导热胶25g直接粘结于导热板10的顶面。可以选择地,为在充分短的导热路径及充够强的粘接力之间获取一较佳的平衡,导热胶25g的厚度可限制在0.5毫米左右。此外,为配合上述芯片23g及导热板10间位置关系的变化,发光二极管20g的其他部分的构造亦有所改变。基座22g位于芯片23g及导热板10之间的部分被移去,其剩余部分则环设于芯片23g四周。封胶29g的上部凸伸出基座22g并部分覆盖住基座22g的顶面,以加强与基座22g间的结合度。经由此种变更设计,由于不存在基座22g的阻隔,芯片23g至导热板10间的导热路径大为缩短,芯片23g所产生的热量可经由导热胶25g直接传输至导热板10上,从而使芯片23g的温度控制在其正常工作范围之内。
如图10所示,还可以理解地,为使芯片23g的温度得到进一步的降低,可将第二实施例中的实心的导热板10替换成填充液体的导热板10g,如板型热管或蒸发腔。借由导热板10g的工作流体相变化时吸收大量热量的特性,将芯片23g所产生的热量迅速散发至周围的空气中,确保芯片23g更加稳定地工作。
如图11所示,还可以理解地,为方便芯片23g在导热板10g上的定位,还可在导热板10g的相应位置处冲出若干开孔12g(图11中仅示出一个开孔12g)。这些开孔12g在对芯片23g定位的同时,还可收容多余的导热胶25g,以防止由于导热胶25g过多漫溢至导热板10g的其他位置处而造成清理不便的情况发生。此外,为提升发光二极管20g的出光效率,还可在开孔12g的内壁面上涂覆一层反光材料(图未示),使自芯片23g侧面发出的光线亦可被反射至封胶29g内。

Claims (10)

1.一种发光二极管模组,其包括一导热板及若干安装至导热板上的发光二极管,每一发光二极管包括一发光二极管芯片、一基座及一结合至基座上并包封芯片的封胶,其特征在于:所述芯片通过导热胶直接粘结至导热板上并被基座所环绕。
2.如权利要求1所述的发光二极管模组,其特征在于:所述导热板内填充有工作流体。
3.如权利要求2所述的发光二极管模组,其特征在于:所述导热板为一热管或蒸发腔。
4.如权利要求1所述的发光二极管模组,其特征在于:所述导热板上开设一容置芯片的开孔。
5.如权利要求4所述的发光二极管模组,其特征在于:所述开孔的内壁面上涂覆一层反光材料。
6.如权利要求1所述的发光二极管模组,其特征在于:所述发光二极管还包括插设于基座内的一第一引脚及一第二引脚,该第一引脚及第二引脚的一部分凸伸于基座内并与芯片电性连接。
7.如权利要求6所述的发光二极管模组,其特征在于:所述第一引脚及第二引脚完全平行于导热板。
8.如权利要求1所述的发光二极管模组,其特征在于:所述封胶部分覆盖住基座的顶面。
9.如权利要求1至8任一项所述的发光二极管模组,其特征在于:所述导热胶的厚度小于1毫米。
10.如权利要求9所述的发光二极管模组,其特征在于:所述导热胶的厚度为0.5毫米。
CN200810066349A 2008-03-26 2008-03-26 发光二极管模组 Pending CN101546754A (zh)

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US8269248B2 (en) * 2009-03-02 2012-09-18 Thompson Joseph B Light emitting assemblies and portions thereof
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