CN101615643A - 发光二极管结构 - Google Patents
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- 230000000149 penetrating effect Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 210000003850 cellular structure Anatomy 0.000 claims description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Abstract
一种发光二极管结构,包括一散热器、安装于散热器上的至少一发光二极管芯片及保护该至少一发光二极管芯片的封装体,该散热器包括相对设置的第一散热体及第二散热体,所述第一散热体及第二散热体均分别包括一基座及从基座向外凸伸的若干散热片,发光二极管芯片与第一散热体及第二散热体热性连接,且发光二极管芯片的两个电极分别与第一散热体及第二散热体电性连接,所述第一散热体与第二散热体之间电性绝缘。
Description
技术领域
本发明涉及一种发光二极管结构。
背景技术
发光二极管(Light Emitting Diode)是利用半导体材料中的电子与空穴结合时能量带位阶的改变,以发光的形式释放出能量。由于发光二极管具有体积小、寿命长、驱动电压低、反映速度快、耐震性佳等优点,已被广泛地应用在广告板、交通标志、日常照明等各种领域中。
一种典型的发光二极管结构包括一基座、位于该基座上的一发光二极管芯片及包围该发光二极管芯片外围的一封胶体。发光二极管芯片通过导线与基座上的导电组件电连接。该基座的表面为平面的金属板,发光二极管芯片所产生的热量首先通过基座散发。
然而,通常发光二极管发光时,其所消耗的能量仅大约10~20%被转换成光能,而其余的能量被转换成热量,这些热量必须及时疏散掉以保证发光二极管的正常工作。该发光二极管结构中,基座与空气的接触面积小,其散热效果不佳,进而影响发光二极管的发光效率与寿命。
发明内容
有鉴于此,有必要提供一种具有较好散热性能的发光二极管结构。
一种发光二极管结构,包括一散热器、安装于散热器上的至少一发光二极管芯片及保护该至少一发光二极管芯片的封装体,该散热器包括相对设置的第一散热体及第二散热体,所述第一散热体及第二散热体分别包括一基座及从基座向外凸伸的若干散热片,发光二极管芯片与第一散热体及第二散热体热性连接,且发光二极管芯片的两个电极分别与第一散热体及第二散热体电性连接,所述第一散热体与第二散热体之间电性绝缘。
该发光二极管结构中,由于散热器包括分别与发光二极管芯片的两个电极电性连接的第一散热体与第二散热体,每一散热体包括一基座及若干散热片,该散热片可大大增加散热面积,使该发光二极管结构具有较好的散热性能;且发光二极管芯片可通过第一散热体与第二散热体与外部电路连通,适用于高功率的发光二极管芯片的封装结构。
附图说明
图1为本发明第一实施例中发光二极管结构的剖面示意图。
图2为图1中散热器的立体分解图。
图3为散热器另一角度的立体分解图。
图4为本发明第二实施例中发光二极管结构的剖面示意图。
具体实施方式
下面参照附图,结合具体实施例对本发明作进一步的描述。
图1所示为本发明一实施例中发光二极管结构的示意图。该发光二极管结构30包括一散热器40、安装于散热器40上的一发光二极管芯片50、保护该发光二极管芯片50的一封装体60及罩设于该封装体60上方的一透光体70。
该散热器40由金属材料制成,整体呈圆柱体状,包括相对设置的一第一散热体41及一第二散热体42。
第一散热体41包括一基座411及从该基座411的外表面向外一体延伸形成的若干散热片412。请参照图2,该基座411呈纵长的半圆柱体状,其包括一矩形的平面4112及一半圆柱状的弧面4114。每一散热片412呈平板状且大致呈半圆形,每一散热片412垂直于基座411而从基座411的弧面4114向外水平延伸。所述散热片412沿基座411的轴向相互间隔设置,散热片412之间相互平行,且相邻的两个散热片412之间分别间隔相等的距离。所述散热片412包括位于基座411顶端的第一散热片412a及位于该第一散热片412a下方的若干第二散热片412b,每一散热片412a、412b包括一与基座411的平面4112共面的内侧面4122及绕设于基座411的弧面4114外围的半圆环形的外侧面4124。其中,所述第二散热片412b的厚度均匀,且所述第二散热片412b的外侧面4124共同位于一假想的半圆柱面上;而第一散热片412a的半径和厚度分别大于每一第二散热片412b的半径和厚度,该第一散热片412a的上表面设有与发光二极管芯片50的一电极(P极)相连的导电组件(图未示)。
所述第二散热体42与第一散热体41相对散热器40中心呈对称设置且两者的结构相同,请参照图3,第二散热体42包括一半圆柱体状的基座421及从基座421的外表面向外一体延伸形成的若干散热片422。其中,该第二散热体42的第一散热片422a上设有与发光二极管芯片50的另一电极(N极)相连的导电组件(图未示)。
请一并参照图2及图3,形成散热器40时,第二散热体42的基座421的平面4212与第一散热体41的基座411的平面4112相对,且第一散热体41的散热片412a、412b的内侧面4122对应与第二散热体42的散热片422a、422b的内侧面4222分别相对,第一散热体41的基座411与第二散热体42的基座421相互接触的表面之间填充有导热性能较高且电性绝缘的材料,如硅胶等形成的热界面材料层80(图1),以将第一散热体41与第二散热体42之间热性连接且电性分离。其中,该第一散热体41的第一散热片412a与第二散热体42的第一散热片422a连接后共同形成一圆盘状的基板结构,发光二极管芯片50装设于该基板的中央并位于该基座411、421的正上方的位置,其电极分别与第一散热体41的导电组件及第二散热体42的导电组件电性连接,发光二极管芯片50封装后通过该第一散热体41及第二散热体42分别与外部电路(图未示)电性连接,因此,该散热器40适用于高功率发光二极管芯片的封装结构。
该封装体60将该发光二极管芯片50包覆在内,可防止发光二极管芯片50受到外力冲击等损坏。形成该封装体60的材料可以为环氧树脂、聚酰亚胺、或压克力等。该封装体60的内壁为斜向上及向外倾斜的反射性内表面61。
该透光体70为一上表面为弧形凸面的塑胶透镜,该透光体70的下表面与封装体60的上表面相互贴合。该透光体70可以对发光二极管芯片50射出封装体60的光线聚光,提高发光二极管芯片50的光利用率。
工作时,发光二极管芯片50产生热量并将热量传递至第一散热体41及第二散热体42的第一散热片412a、422a上,并沿着所述第一散热体41及第二散热体42的基座411、421迅速向下传递及由所述第二散热片412b、422b向外传递和散发。散热片412b、422b可大大增加散热器40与空气的接触面积,提高散热效率。
如图4所示为本发明发光二极管结构的第二实施例,其区别在于:第一散热体41a与第二散热体42a的基座411a、421a为内部具有大量孔隙的发泡金属块,该发泡金属块由与散热片412、422相同的金属材料制成。其中,所述第一散热体41a与第二散热体42a的散热片412、422与基座411a、421a也可以为分别单独成型后再相互连接,此时,基座411a、421a还可以为内部具有大量孔隙的其他多孔性结构,如为金属粉末通过烧结而形成的多孔性半圆柱体。工作时,由于所述基座411a、421a的内部形成大量的孔隙,可以增加其与空气的接触面积,有利于热量沿基座411a、421a迅速传递至下方的第二散热片412b、422b上对外散发。
Claims (10)
1.一种发光二极管结构,包括一散热器、安装于散热器上的至少一发光二极管芯片及保护该至少一发光二极管芯片的封装体,其特征在于:该散热器包括相对设置的第一散热体及第二散热体,所述第一散热体及第二散热体分别包括一基座及从基座向外凸伸的若干散热片,发光二极管芯片与第一散热体及第二散热体热性连接,且发光二极管芯片的两个电极分别与第一散热体及第二散热体电性连接,所述第一散热体与第二散热体之间电性绝缘。
2.如权利要求1所述的发光二极管结构,其特征在于:所述基座呈半圆柱体状,所述散热片分别从基座的外表面垂直基座向外延伸。
3.如权利要求2所述的发光二极管结构,其特征在于:所述散热片沿基座的轴向相互间隔设置,每一散热片呈半圆形的平板状。
4.如权利要求2所述的发光二极管结构,其特征在于:所述散热片包括位于基座顶端的一第一散热片及位于该第一散热片下方的若干第二散热片,第一散热片的半径和厚度分别大于每一第二散热片的半径和厚度。
5.如权利要求4所述的发光二极管结构,其特征在于:每一第二散热片包括与基座的平面共面的内侧面及绕设于基座外围的外侧面,所述第二散热片的外侧面位于一假想的半圆柱面上。
6.如权利要求4所述的发光二极管结构,其特征在于:所述第一散热片上设有与发光二极管芯片的电极电性连接的导电组件,所述第一散热体的第一散热片与第二散热体的第一散热片共同形成一圆盘状的基板,发光二极管芯片设于该基板上,所述第一散热体的基座与第二散热体的基座之间设置有导热性能较好且电性绝缘的热界面材料。
7.如权利要求1所述的发光二极管结构,其特征在于:该基座的材料为内部形成有大量孔隙的多孔性结构。
8.如权利要求1所述的发光二极管结构,其特征在于:该第一散热体与该第二散热体相对于散热器的中心呈对称设置且结构相同。
9.如权利要求1所述的发光二极管结构,其特征在于:该散热器整体呈圆柱体状。
10.如权利要求1所述的发光二极管结构,其特征在于:还包括一罩设于封装体上方的一透光体,该透光体具有一与该封装体结合的下表面及一相对的上表面,该上表面为弧形凸面。
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FR2825137B1 (fr) * | 2001-05-22 | 2004-01-23 | Newmat Sa | Ensemble de montage d'un spot auto-portant sur un plafond tendu |
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DE602006008440D1 (zh) * | 2005-03-08 | 2009-09-24 | Carl Denis Amor | |
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CN101660716A (zh) * | 2008-08-25 | 2010-03-03 | 富士迈半导体精密工业(上海)有限公司 | 光源装置 |
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- 2008-06-25 CN CN200810068114.4A patent/CN101615643A/zh active Pending
- 2008-09-29 US US12/239,834 patent/US20090323346A1/en not_active Abandoned
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CN102062366A (zh) * | 2010-11-03 | 2011-05-18 | 宁波江丰电子材料有限公司 | Led芯片用背板及led芯片用背板的材料的制备方法 |
CN102087017A (zh) * | 2010-12-27 | 2011-06-08 | 东莞市百分百科技有限公司 | 散热器的散热方法及实施该方法的散热器 |
CN102087017B (zh) * | 2010-12-27 | 2013-06-12 | 东莞市百分百科技有限公司 | 散热器的散热方法及实施该方法的散热器 |
CN103311232A (zh) * | 2012-03-07 | 2013-09-18 | 盈胜科技股份有限公司 | 一体化多层式照明装置 |
CN104359331A (zh) * | 2014-10-29 | 2015-02-18 | 太仓陶氏电气有限公司 | 一种组合式散热器 |
CN106247295A (zh) * | 2016-08-18 | 2016-12-21 | 东莞市闻誉实业有限公司 | 具有led灯排的照明灯具 |
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