JPWO2016181256A1 - 半導体装置、電子部品および電子機器 - Google Patents

半導体装置、電子部品および電子機器 Download PDF

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Publication number
JPWO2016181256A1
JPWO2016181256A1 JP2017517443A JP2017517443A JPWO2016181256A1 JP WO2016181256 A1 JPWO2016181256 A1 JP WO2016181256A1 JP 2017517443 A JP2017517443 A JP 2017517443A JP 2017517443 A JP2017517443 A JP 2017517443A JP WO2016181256 A1 JPWO2016181256 A1 JP WO2016181256A1
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JP
Japan
Prior art keywords
transistor
oxide
memory cell
circuit
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2017517443A
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English (en)
Japanese (ja)
Inventor
航 上杉
航 上杉
幸男 前橋
幸男 前橋
達也 大貫
達也 大貫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2016181256A1 publication Critical patent/JPWO2016181256A1/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2017517443A 2015-05-12 2016-05-04 半導体装置、電子部品および電子機器 Withdrawn JPWO2016181256A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015097023 2015-05-12
JP2015097023 2015-05-12
PCT/IB2016/052526 WO2016181256A1 (fr) 2015-05-12 2016-05-04 Dispositif à semi-conducteur, composant électronique et dispositif électronique

Publications (1)

Publication Number Publication Date
JPWO2016181256A1 true JPWO2016181256A1 (ja) 2018-03-08

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Family Applications (1)

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JP2017517443A Withdrawn JPWO2016181256A1 (ja) 2015-05-12 2016-05-04 半導体装置、電子部品および電子機器

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JP (1) JPWO2016181256A1 (fr)
WO (1) WO2016181256A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017055967A1 (fr) 2015-09-30 2017-04-06 Semiconductor Energy Laboratory Co., Ltd. Dispositif semi-conducteur et dispositif électronique
US10622059B2 (en) 2016-03-18 2020-04-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor based memory device
US10210915B2 (en) 2016-06-10 2019-02-19 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device including the same
KR102421300B1 (ko) * 2017-01-13 2022-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치, 전자 부품, 및 전자 기기
CN117355134A (zh) * 2017-01-27 2024-01-05 株式会社半导体能源研究所 电容器、半导体装置及半导体装置的制造方法
CN106952827A (zh) * 2017-03-16 2017-07-14 深圳市华星光电技术有限公司 薄膜晶体管及其制造方法、显示面板
CN113454718A (zh) * 2019-02-22 2021-09-28 株式会社半导体能源研究所 半导体装置以及具有该半导体装置的电器设备
WO2021009607A1 (fr) * 2019-07-12 2021-01-21 株式会社半導体エネルギー研究所 Dispositif de stockage, dispositif à semi-conducteur, et dispositif électronique

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010017798A1 (en) * 2000-01-18 2001-08-30 Tomoyuki Ishii Semiconductor integrated circuit device and data processor device
JP2004153700A (ja) * 2002-10-31 2004-05-27 Seiko Epson Corp フィールド・プログラマブル・ゲート・アレイおよびその使用方法
US20120112257A1 (en) * 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20120294102A1 (en) * 2011-05-20 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and signal processing circuit
US20130247057A1 (en) * 2012-03-13 2013-09-19 Rohm Co., Ltd. Multi-task processing apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9076505B2 (en) * 2011-12-09 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP6105266B2 (ja) * 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
TWI618058B (zh) * 2013-05-16 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
US20150294991A1 (en) * 2014-04-10 2015-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
TWI735206B (zh) * 2014-04-10 2021-08-01 日商半導體能源研究所股份有限公司 記憶體裝置及半導體裝置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010017798A1 (en) * 2000-01-18 2001-08-30 Tomoyuki Ishii Semiconductor integrated circuit device and data processor device
JP2001274355A (ja) * 2000-01-18 2001-10-05 Hitachi Ltd 半導体記憶装置及びデータ処理装置
JP2004153700A (ja) * 2002-10-31 2004-05-27 Seiko Epson Corp フィールド・プログラマブル・ゲート・アレイおよびその使用方法
US20120112257A1 (en) * 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013008937A (ja) * 2010-11-05 2013-01-10 Semiconductor Energy Lab Co Ltd 半導体装置
US20120294102A1 (en) * 2011-05-20 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and signal processing circuit
JP2013008437A (ja) * 2011-05-20 2013-01-10 Semiconductor Energy Lab Co Ltd 記憶装置及び信号処理回路
US20130247057A1 (en) * 2012-03-13 2013-09-19 Rohm Co., Ltd. Multi-task processing apparatus
JP2013190893A (ja) * 2012-03-13 2013-09-26 Rohm Co Ltd マルチタスク処理装置

Also Published As

Publication number Publication date
WO2016181256A1 (fr) 2016-11-17

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