JPWO2016166939A1 - 半導体の製造方法およびSiC基板 - Google Patents
半導体の製造方法およびSiC基板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 141
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 230000000737 periodic effect Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 22
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 22
- 230000007547 defect Effects 0.000 abstract description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 139
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 107
- 238000010586 diagram Methods 0.000 description 43
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 15
- 238000005498 polishing Methods 0.000 description 14
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 230000006911 nucleation Effects 0.000 description 2
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- 238000000059 patterning Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
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- 208000030963 borderline personality disease Diseases 0.000 description 1
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- 239000003054 catalyst Substances 0.000 description 1
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- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- -1 cubic 3C-SiC Chemical compound 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
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- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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Abstract
Description
本実施形態のSiC基板の表面形状の加工方法において、表面加工パターンを変更させた実験を行い、そのSiC基板を使用して耐圧1200VクラスのSiC_PNダイオードを作製した。
Claims (9)
- SiC基板の<−1100>方向に垂直な方向に周期的なテクスチャーを形成し、前記SiC基板の基底面と形成したテクスチャーの面とのなす角がオフ角より小さい前記SiC基板上に、エピタキシャル成膜することを特徴とする半導体の製造方法。
- 前記テクスチャーは、表面に表面コート層を有する加工工具と前記SiC基板とを接触させ、前記加工工具を前記SiC基板の<−1100>方向に往復運動させて形成されていることを特徴とする請求項1に記載の半導体の製造方法。
- 前記表面コート層は、Pt、Ir、Re、Pd、Rh、Os、AuおよびAgのいずれかであることを特徴とする請求項2に記載の半導体の製造方法。
- 前記SiC基板の基底面と前記形成したテクスチャーの面とのなす角が3°以内であることを特徴とする請求項1に記載の半導体の製造方法。
- 前記テクスチャーの前記SiC基板の<−1100>方向に垂直な方向のピッチが200nm以下であることを特徴とする請求項1に記載の半導体の製造方法。
- SiC基板の<−1100>方向に垂直な方向に周期的なテクスチャーが形成され、前記SiC基板の基底面と形成したテクスチャーの面とのなす角がオフ角より小さいことを特徴とするSiC基板。
- 前記SiC基板の基底面と前記形成したテクスチャーの面とのなす角が3°以内であることを特徴とする請求項6に記載のSiC基板。
- 前記テクスチャーの前記SiC基板の<−1100>方向に垂直な方向のピッチが200nm以下であることを特徴とする請求項6に記載のSiC基板。
- 前記テクスチャーの2つの面が作る谷角をΨ、前記SiC基板の表面から基底面までの角度をオフ角θ、および前記SiC基板の表面からの傾斜角をφとすると、前記谷角Ψが、
Ψ=90°+|θ−φ|
を満たすことを特徴とする請求項6に記載のSiC基板。
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JP2015085449 | 2015-04-17 | ||
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PCT/JP2016/001742 WO2016166939A1 (ja) | 2015-04-17 | 2016-03-25 | 半導体の製造方法およびSiC基板 |
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JP (1) | JP6380663B2 (ja) |
CN (1) | CN106795649B (ja) |
DE (1) | DE112016000120T5 (ja) |
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- 2016-03-25 CN CN201680003021.6A patent/CN106795649B/zh active Active
- 2016-03-25 DE DE112016000120.7T patent/DE112016000120T5/de not_active Withdrawn
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CN106795649B (zh) | 2019-12-17 |
DE112016000120T5 (de) | 2017-07-06 |
CN106795649A (zh) | 2017-05-31 |
US20170204531A1 (en) | 2017-07-20 |
US10246793B2 (en) | 2019-04-02 |
WO2016166939A1 (ja) | 2016-10-20 |
JP6380663B2 (ja) | 2018-08-29 |
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