JPWO2016047615A1 - 光電変換装置および光電変換モジュール - Google Patents
光電変換装置および光電変換モジュール Download PDFInfo
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- JPWO2016047615A1 JPWO2016047615A1 JP2016550314A JP2016550314A JPWO2016047615A1 JP WO2016047615 A1 JPWO2016047615 A1 JP WO2016047615A1 JP 2016550314 A JP2016550314 A JP 2016550314A JP 2016550314 A JP2016550314 A JP 2016550314A JP WO2016047615 A1 JPWO2016047615 A1 JP WO2016047615A1
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 77
- 239000002096 quantum dot Substances 0.000 claims abstract description 117
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 27
- 239000001301 oxygen Substances 0.000 claims abstract description 27
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 22
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 10
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 230000010354 integration Effects 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 61
- 239000013078 crystal Substances 0.000 description 20
- 239000011521 glass Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 239000002105 nanoparticle Substances 0.000 description 11
- 238000003756 stirring Methods 0.000 description 11
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 10
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 10
- 239000011734 sodium Substances 0.000 description 10
- 229910052725 zinc Inorganic materials 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 10
- 239000011259 mixed solution Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
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- 239000000969 carrier Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 5
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 5
- 239000004312 hexamethylene tetramine Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001420 photoelectron spectroscopy Methods 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
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- 150000001768 cations Chemical class 0.000 description 3
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- 230000003746 surface roughness Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
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Abstract
Description
1a・・・・・・・・・・量子ドット
1ap・・・・・・・・・p型の量子ドット
1an・・・・・・・・・n型の量子ドット
3・・・・・・・・・・・基部層
5・・・・・・・・・・・キャリア収集部
5a・・・・・・・・・・開放端部
5b・・・・・・・・・・本体部
5bb・・・・・・・・・根元部
7・・・・・・・・・・・透明導電膜
9・・・・・・・・・・・ガラス基板
11・・・・・・・・・・電極層
13・・・・・・・・・・量子ドット
21・・・・・・・・・・ナノ粒子層
22・・・・・・・・・・マスクパターン
22a・・・・・・・・・開口部
23・・・・・・・・・・柱状晶
25・・・・・・・・・・半導体粒子
C・・・・・・・・・・・キャリア
Claims (13)
- 複数の量子ドットを有する量子ドット集積部と、該量子ドット集積部の面に配置された集電性を有する基部層と、該基部層から前記量子ドット集積部内に延伸し、開放端を有してなる柱状をした複数のキャリア収集部とを備えており、前記キャリア収集部は、開放端部と、該開放端部以外の本体部とを含み、かつ金属酸化物を主体とするものであり、前記開放端部は、前記本体部よりも金属に対する酸素のモル比が高いことを特徴とする光電変換装置。
- 前記金属酸化物が酸化亜鉛または酸化チタンであることを特徴とする請求項1に記載の光電変換装置。
- 前記本体部における前記金属酸化物の酸素/金属のモル比が1未満であることを特徴とする請求項1または2に記載の光電変換装置。
- 前記キャリア収集部が、副成分として、Li、Na、K、Ga、BおよびAlの群から選ばれる1種を含んでいることを特徴とする請求項1乃至3のうちいずれかに記載の光電変換装置。
- 前記副成分の含有量が1〜5原子%であることを特徴とする請求項4に記載の光電変換装置層。
- 前記副成分は、前記開放端部および前記本体部に分散していることを特徴とする請求項4または5に記載の光電変換装置。
- 前記複数のキャリア収集部のうち、一部が扁平状であることを特徴とする請求項1乃至6のうちいずれかに記載の光電変換装置。
- 前記扁平状のキャリア収集部は、横断面のアスペクト比が2以上であることを特徴とする請求項7に記載の光電変換装置。
- 前記扁平状のキャリア収集部は、前記基部層側の根元部よりも開放端側の幅が広いことを特徴とする請求項7または8に記載の光電変換装置。
- 前記複数のキャリア収集部は、延伸方向が異なるキャリア収集部を含んでおり、該延伸方向が異なるキャリア収集部同士の一部が接触していることを特徴とする請求項1乃至9のうちいずれかに記載の光電変換装置。
- 前記量子ドットが、n型の量子ドットとp型の量子ドットとを有しており、前記キャリア収集部の周囲に前記n型の量子ドットが配置され、該n型の量子ドットの外側に前記p型の量子ドットが配置されていることを特徴とする請求項1乃至10のうちいずれかに記載の光電変換装置。
- 前記量子ドット集積部、前記基部層および前記キャリア収集部を備えた光電変換層を複数積層してなることを特徴とする請求項1乃至11のうちいずれかに記載の光電変換装置。
- 請求項1乃至12のうちのいずれかに記載の光電変換装置を複数有しており、隣り合う前記光電変換装置同士を接続導体で電気的に接続してなることを特徴とする光電変換モジュール。
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