JPWO2015033740A1 - 炭化珪素半導体素子および炭化珪素半導体素子の製造方法 - Google Patents
炭化珪素半導体素子および炭化珪素半導体素子の製造方法 Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 90
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims description 66
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- 238000010521 absorption reaction Methods 0.000 claims abstract description 65
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011229 interlayer Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- -1 tungsten nitride Chemical class 0.000 claims description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 7
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000007788 roughening Methods 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 claims description 2
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 description 19
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
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- 150000004767 nitrides Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
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- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 229910000943 NiAl Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
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- 238000010304 firing Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 239000007943 implant Substances 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 239000012299 nitrogen atmosphere Substances 0.000 description 1
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- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
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- 239000002344 surface layer Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
本発明の実施の形態1にかかる炭化珪素半導体素子の製造方法について、p型ウェル領域とn型ソース領域とをそれぞれイオン注入で形成する二重注入(Double Implante)プロセスによって二重注入型MOSFET(DIMOSFET)を作製(製造)する場合を例に説明する。図1は、本発明の実施の形態1にかかる赤外線吸収膜を形成した炭化珪素半導体素子の断面図、図2〜図4は、本発明の実施の形態1にかかる赤外線吸収膜の位置を示す平面図である。
(最大値−最小値)/(最大値+最小値)
の数式を用いて算出した。
図5は、本発明の実施の形態1にかかる赤外線吸収膜を形成した場合と、赤外線吸収膜を形成しない場合との接触抵抗の対比図である。図5に示すように、実施の形態1の赤外線吸収膜8を形成したMOSFET素子と、実施例1と同様の工程で作製し、赤外線吸収膜8を形成しないMOSFET素子と、のそれぞれについて、TLM領域において接触抵抗の測定を行った。図5に示すように、各種材料による赤外線吸収膜8を設置することにより、赤外線吸収膜8を設置しない場合に比べて、接触抵抗(平均値)および接触抵抗分布がいずれも小さくなることを確認できた。
図6は、本発明の実施の形態2にかかる赤外線吸収膜を形成した場合と、赤外線吸収膜を形成しない場合との接触抵抗の対比図である。実施の形態2では、実施の形態1と同様の工程で、赤外線吸収膜8として、チタンナイトライド膜を図2、図3、図4に示すそれぞれの形状(箇所)に形成した。そして、素子近傍に形成したコンタクト抵抗測定用のTLMパターン領域を用いて、p型コンタクト領域3のコンタクト抵抗のウエハ面内ばらつきを測定した。
実施の形態3は、実施の形態1と同様の工程で、チタンナイトライド膜を実施の形態1の図2に示した形状で赤外線吸収膜8をパターニングした後に、再度ドライエッチング装置にn-型炭化珪素基板1を挿入し、塩素ガスを用いたドライエッチングを5秒間実施し、赤外線吸収膜8の表面を粗面化した。このウエハにおいて、p型コンタクト領域3のコンタクト抵抗のウエハ面内ばらつきを測定した。
実施の形態4では、実施の形態1と同様の工程で、チタンナイトライド膜を実施の形態1の図2に示した形状で赤外線吸収膜8をパターニングした。そして、Ni形成後のRTAにおいて、昇温レートを毎秒0.5℃、毎秒1.0℃、毎秒4.0℃、毎秒10℃とした各サンプルを作製し、ソースコンタクト電極部16の断面を切出しNiシリサイドが形成されているかを確認した。
2 p型ウェル領域
3 p型コンタクト領域
4 n型ソース領域
5 ゲート絶縁膜
6 ゲート電極
7 層間絶縁膜
8 赤外線吸収膜
9 p型コンタクトパターン
10 Niパターン
11 取り出し電極
12 裏面電極
13 p型耐圧リング形状部
14 チップ領域
15 ウエハ
Claims (14)
- 炭化珪素半導体基板の表面に赤外線吸収膜を選択的に形成する工程と、
前記炭化珪素半導体基板上の前記赤外線吸収膜の形成領域を除く領域にアルミニウム膜と、ニッケル膜とを順に形成する工程と、
前記炭化珪素半導体基板に所定の昇温レートの急速アニール処理により均一に電極を形成する工程と、
を含むことを特徴とする炭化珪素半導体素子の製造方法。 - 前記急速アニール処理を行う工程は、前記炭化珪素半導体基板をカーボンサセプタ上に設置し、カーボンサセプタの測定温度で毎秒1℃以上の上昇温度での加熱を行うことを特徴とする請求項1に記載の炭化珪素半導体素子の製造方法。
- 前記赤外線吸収膜の表面を粗面化する工程を含むことを特徴とする請求項1または2に記載の炭化珪素半導体素子の製造方法。
- 炭化珪素半導体基板の表面に選択的に形成された赤外線吸収膜と、
前記炭化珪素半導体基板上の前記赤外線吸収膜の形成領域を除く領域に順に形成されたアルミニウム膜およびニッケル膜と、
前記炭化珪素半導体基板に所定の昇温レートの急速アニール処理により形成された均一な電極と、
を有することを特徴とする炭化珪素半導体素子。 - 前記赤外線吸収膜が、窒化チタン、窒化モリブデン、窒化タングステン、窒化クロムの少なくとも1つ、またはこれらの積層膜からなることを特徴とする請求項4に記載の炭化珪素半導体素子。
- 前記赤外線吸収膜が、窒化チタンとチタンの積層膜、窒化モリブデンとモリブデンの積層膜、窒化タングステンとタングステンの積層膜、または窒化クロムとクロムの積層膜からなることを特徴とする請求項4に記載の炭化珪素半導体素子。
- 前記赤外線吸収膜が10nm以上300nm以下の厚さで形成されたことを特徴とする請求項4に記載の炭化珪素半導体素子。
- 前記アルミニウム膜が10nm以上100nm以下の厚さで形成されたことを特徴とする請求項4に記載の炭化珪素半導体素子。
- 前記ニッケル膜が20nm以上100nm以下の厚さで形成されたことを特徴とする請求項4に記載の炭化珪素半導体素子。
- 前記赤外線吸収膜は、チップ領域のソースコンタクト電極部を除いた活性部に設けられたことを特徴とする請求項4に記載の炭化珪素半導体素子。
- 前記赤外線吸収膜は、チップ領域の全域に設けられたことを特徴とする請求項4に記載の炭化珪素半導体素子。
- 前記赤外線吸収膜は、ウェハのチップ領域を除いた領域に設けられたことを特徴とする請求項4に記載の炭化珪素半導体素子。
- 前記赤外線吸収膜は、層間絶縁膜の開口部のうち、n型領域およびp型領域を露出する開口部を除く領域に形成されたことを特徴とする請求項4〜12のいずれか一つに記載の炭化珪素半導体素子。
- 前記n型領域上に前記ニッケル膜が形成され、前記p型領域上に前記アルミニウム膜と前記ニッケル膜とが積層されたことを特徴とする請求項13に記載の炭化珪素半導体素子。
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