JPWO2014073597A1 - 導電体及びその製造方法 - Google Patents
導電体及びその製造方法 Download PDFInfo
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000002042 Silver nanowire Substances 0.000 claims abstract description 36
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- 239000000126 substance Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 30
- -1 triazine compound Chemical class 0.000 claims description 21
- 229910044991 metal oxide Inorganic materials 0.000 claims description 20
- 150000004706 metal oxides Chemical class 0.000 claims description 20
- 125000003545 alkoxy group Chemical group 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 10
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 claims description 9
- 125000000524 functional group Chemical group 0.000 claims description 9
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 9
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- 0 *c1nc(*)nc(NCC*[S+])n1 Chemical compound *c1nc(*)nc(NCC*[S+])n1 0.000 description 1
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- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
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Abstract
Description
基材と、
前記基材上に形成された銀ナノワイヤを含む透明導電膜と、
少なくとも一部が前記透明導電膜上に重なるように形成された金属膜と、
を有し、
前記透明導電膜と前記金属膜とが重なった部分に、前記透明導電膜及び前記金属膜のそれぞれに対し密着性を有して前記透明導電膜と前記金属膜との間の導通を妨げないバッファ膜を有することを特徴とするものである。
基材上に形成された銀ナノワイヤを含む透明導電膜上に、前記透明導電膜と次工程に形成される金属膜のそれぞれと密着性を有して前記透明導電膜と前記金属膜との間の導通を妨げないバッファ膜を形成する工程と、
前記バッファ膜上に前記金属膜の少なくとも一部を形成する工程と、
を有することを特徴とするものである。
また本発明では、前記バッファ膜に対して熱処理工程を施すことが好ましい。これにより、より効果的に透明導電膜と金属膜間の密着性を向上させることができる。
図1(a)に示す導電体1は、透明基材2と、透明基材2の上面2aに形成された透明導電膜3と、透明導電膜3上に形成されたバッファ膜4と、バッファ膜4上に形成された金属膜5とを有して構成される。
なおこの明細書において、「透明」「透光性」とは可視光線透過率が50%以上(好ましくは80%以上)の状態を指す。
また、有機物に対して熱処理が施されていることが密着性をより効果的に向上させるうえで好ましい。熱処理は、100℃前後で数分〜数十分行うことが好適である。この熱処理は、上記の化学式7や化学式8に示すトリアジン化合物を用いたバッファ膜4の形成工程中に施されるものであってもよいし、あるいは、バッファ膜4の形成工程後(金属膜5の成膜前、成膜中、成膜後のいずれであってもよい)に施されるものであってもよい。
金属膜4をCu膜で形成することが好ましい。
さらにレジスト層9を除去することで図6に示す導電体1が完成する。
いずれの導電体も、透明基材上に銀ナノワイヤを含む透明導電膜が形成された共通の導電基材を使用し、さらに金属膜として膜厚が150nmのCu膜を成膜した。
なお、実施例1、2については、透明導電膜の上面を逆スパッタしていない。
2 透明基材
3 透明導電膜
4 バッファ膜
5 金属膜
6 銀ナノワイヤ
7 樹脂層
8、9 レジスト層
金属膜5をCu膜で形成することが好ましい。
基材と、
前記基材上に形成された銀ナノワイヤを含む透明導電膜と、
少なくとも一部が前記透明導電膜上に重なるように形成された金属膜と、
を有し、
前記透明導電膜と前記金属膜とが重なった部分に、前記透明導電膜及び前記金属膜のそれぞれに対し密着性を有して前記透明導電膜と前記金属膜との間の導通を妨げないバッファ膜を有する導電体であって、
前記バッファ膜が、透明金属酸化物で形成されること、あるいは、前記透明導電膜及び前記金属膜の夫々に結合する官能基を備えた有機物であることを特徴とするものである。
基材上に形成された銀ナノワイヤを含む透明導電膜上に、前記透明導電膜と次工程に形成される金属膜のそれぞれと密着性を有して前記透明導電膜と前記金属膜との間の導通を妨げないバッファ膜を形成する工程と、
前記バッファ膜上に前記金属膜の少なくとも一部を形成する工程と、
を有する導電体の製造方法であって、
前記バッファ膜を、透明金属酸化物で形成すること、あるいは、前記透明導電膜及び前記金属膜の夫々に結合する官能基を備えた有機物で形成することを特徴とするものである。
Claims (17)
- 基材と、
前記基材上に形成された銀ナノワイヤを含む透明導電膜と、
少なくとも一部が前記透明導電膜上に重なるように形成された金属膜と、
を有し、
前記透明導電膜と前記金属膜とが重なった部分に、前記透明導電膜及び前記金属膜のそれぞれに対し密着性を有して前記透明導電膜と前記金属膜との間の導通を妨げないバッファ膜を有することを特徴とする導電体。 - 前記バッファ膜は、透明金属酸化物で形成される請求項1記載の導電体。
- 前記透明金属酸化物は、ITOである請求項2記載の導電体。
- 前記透明導電膜の上面は逆スパッタ面であり、前記バッファ膜は前記逆スパッタ面上に形成される請求項2又は3に記載の導電体。
- 前記バッファ膜は、前記透明導電膜及び前記金属膜の夫々に結合する官能基を備えた有機物である請求項1記載の導電体。
- 前記有機物は、アルコキシ基及びチオール基、あるいはアルコキシ基及びアジ基を有するトリアジン化合物である請求項5記載の導電体。
- 前記有機物に対して熱処理が施されている請求項5ないし7のいずれか1項に記載の導電体。
- 前記金属膜は、Cuで形成される請求項1ないし8のいずれか1項に記載の導電体。
- 基材上に形成された銀ナノワイヤを含む透明導電膜上に、前記透明導電膜と次工程に形成される金属膜のそれぞれと密着性を有して前記透明導電膜と前記金属膜との間の導通を妨げないバッファ膜を形成する工程と、
前記バッファ膜上に前記金属膜の少なくとも一部を形成する工程と、
を有することを特徴とする導電体の製造方法。 - 前記バッファ膜を、透明金属酸化物で形成する請求項10記載の導電体の製造方法。
- 前記透明金属酸化物を、ITOで形成する請求項11記載の導電体の製造方法。
- 前記透明導電層の上面を逆スパッタした後、前記上面に前記透明導電膜を形成する請求項10ないし12のいずれか1項に記載の導電体の製造方法。
- 前記バッファ膜を、前記透明導電膜及び前記金属膜の夫々に結合する官能基を備えた有機物で形成する請求項10記載の導電体の製造方法。
- 前記有機物を、アルコキシ基及びチオール基、あるいはアルコキシ基及びアジ基を有するトリアジン化合物で形成する請求項14記載の導電体の製造方法。
- 前記バッファ膜に対し熱処理工程を施す請求項14ないし16のいずれか1項に記載の導電体の製造方法。
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US20180015477A1 (en) * | 2016-07-15 | 2018-01-18 | Calvin Moore | Plastic shredder |
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JP6782211B2 (ja) | 2017-09-08 | 2020-11-11 | 株式会社東芝 | 透明電極、それを用いた素子、および素子の製造方法 |
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