JPWO2011081203A1 - 磁気抵抗素子の製造方法 - Google Patents
磁気抵抗素子の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 150
- 239000002184 metal Substances 0.000 claims abstract description 150
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 35
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- 230000001590 oxidative effect Effects 0.000 claims abstract description 8
- 239000011777 magnesium Substances 0.000 claims description 74
- 238000010438 heat treatment Methods 0.000 claims description 51
- 230000003647 oxidation Effects 0.000 claims description 45
- 238000007254 oxidation reaction Methods 0.000 claims description 45
- 239000001301 oxygen Substances 0.000 claims description 38
- 229910052760 oxygen Inorganic materials 0.000 claims description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 36
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 7
- 150000004706 metal oxides Chemical class 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 275
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 37
- 239000000395 magnesium oxide Substances 0.000 description 37
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 37
- 230000005415 magnetization Effects 0.000 description 18
- 230000005291 magnetic effect Effects 0.000 description 12
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
- 229910001882 dioxygen Inorganic materials 0.000 description 8
- 239000010936 titanium Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910003321 CoFe Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910019236 CoFeB Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- -1 helium (He) Chemical compound 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/01—Magnetic additives
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- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Magnetic Heads (AREA)
Abstract
Description
その他の方法として、第1のMg層を成膜後、高圧下で酸化処理を施し、その後第2のMg層を成膜して、低圧下で酸化処理を施す方法が報告されている(特許文献2参照)。
図1は、本実施形態に係る、TMR素子の製造工程を説明するフロー図である。また図2は、本実施形態に係るTMR素子の構成を概略的に示す断面図である。
なお、本実施形態では、下地層2として第1の下地層2aと第2の下地層2bとの積層体を用いているが、これに限定されず、下地層2は1層であっても良い。
以上説明した本実施形態において、金属層を成膜して、その後に酸化処理によって酸化層を形成する方法を用いたTMR素子について、高いMR比を得ることのできるTMR素子の製造方法について説明する。
本実施形態では、第1の金属層5aの形成時に、第1の金属層5aに酸素原子を意図的に含ませる(第1の金属層5aに酸素をドープする)。すなわち、本実施形態では、第1の金属層5aの形成時において、成膜チャンバに酸素ガスも導入して、その内部に酸素を含ませながら第1の金属層5aを形成する。
Claims (6)
- 第1の強磁性層が形成された基板を用意する工程と、
前記第1の強磁性層上にトンネルバリア層を作製する工程と、
前記トンネルバリア層上に第2の強磁性層を形成する工程と、を含み、
前記トンネルバリア層を作製する工程は、
前記第1の強磁性層上に第1の金属層を成膜する工程と、
前記第1の金属層を酸化する工程と、
前記酸化された第1の金属層上に第2の金属層を成膜する工程と、
前記酸化された第1の金属層及び前記第2の金属層を加熱処理する工程と
を有することを特徴とする磁気抵抗素子の製造方法。 - 前記第1の金属層を成膜する工程は、前記第1の金属層の内部に酸素を含有させるように該第1の金属層を形成することを特徴とする請求項1に記載の磁気抵抗素子の製造方法。
- 前記加熱処理する工程は、前記加熱処理により、前記酸化する工程にて前記酸化された第1の金属層の表面に残存する酸素と前記第2の金属層とを結合させることを特徴とする請求項1に記載の磁気抵抗素子の製造方法。
- 前記第1および第2の金属層の少なくとも一方は、マグネシウム、またはマグネシウムを含むことを特徴とする請求項1に記載の磁気抵抗素子の製造方法。
- 前記加熱処理する工程の後に、前記加熱処理が行われた基板の冷却を行うことを特徴とする請求項1に記載の磁気抵抗素子の製造方法。
- 第1の強磁性層が形成された基板を用意する工程と、
前記第1の強磁性層上にトンネルバリア層を作製する工程と、
前記トンネルバリア層上に第2の強磁性層を形成する工程と、を含み、
前記トンネルバリア層を作製する工程は、
前記第1の強磁性層上に第1の金属層を成膜する工程と、
前記第1の金属層を酸化する工程と、
前記酸化された第1の金属層上に第2の金属層を成膜する工程と、
前記酸化された第1の金属層及び前記第2の金属層を、該第2の金属層が沸騰する温度で加熱処理する工程と
を有することを特徴とする磁気抵抗素子の製造方法。
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US (1) | US8728830B2 (ja) |
EP (1) | EP2521194B1 (ja) |
JP (1) | JP5502900B2 (ja) |
KR (1) | KR101374325B1 (ja) |
CN (1) | CN102687297B (ja) |
TW (1) | TWI440236B (ja) |
WO (1) | WO2011081203A1 (ja) |
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EP2568305B1 (en) * | 2011-09-09 | 2016-03-02 | Crocus Technology S.A. | Magnetic tunnel junction with an improved tunnel barrier |
US8619394B1 (en) * | 2012-11-29 | 2013-12-31 | HGST Netherlands B.V. | Magnetic tunnel junction with barrier cooling for magnetic read head |
US9034491B2 (en) * | 2012-11-30 | 2015-05-19 | Seagate Technology Llc | Low resistance area magnetic stack |
WO2014097510A1 (ja) * | 2012-12-20 | 2014-06-26 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
JP6068662B2 (ja) * | 2013-09-25 | 2017-01-25 | キヤノンアネルバ株式会社 | 真空処理装置、真空処理方法、磁気抵抗効果素子の製造方法および磁気抵抗効果素子の製造装置 |
WO2015072140A1 (ja) * | 2013-11-18 | 2015-05-21 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
WO2015072139A1 (ja) * | 2013-11-18 | 2015-05-21 | キヤノンアネルバ株式会社 | 磁気抵抗効果素子の製造方法 |
KR102335104B1 (ko) | 2014-05-23 | 2021-12-03 | 삼성전자 주식회사 | 자기 소자 |
US9378760B2 (en) * | 2014-07-31 | 2016-06-28 | Seagate Technology Llc | Data reader with tuned microstructure |
KR102287755B1 (ko) | 2014-11-18 | 2021-08-09 | 삼성전자주식회사 | 자기 저항 메모리 소자를 형성하는 방법 |
JP2016134510A (ja) * | 2015-01-20 | 2016-07-25 | 東京エレクトロン株式会社 | 垂直磁化型磁気トンネル接合素子を形成する方法、及び垂直磁化型磁気トンネル接合素子の製造装置 |
KR101708548B1 (ko) * | 2015-02-06 | 2017-02-22 | 한양대학교 산학협력단 | 개선된 터널 배리어 구조를 갖는 mtj 셀 및 그 제작 방법 |
CN111276600B (zh) | 2015-03-31 | 2023-09-08 | Tdk株式会社 | 磁阻效应元件 |
CN107408625B (zh) * | 2015-03-31 | 2020-09-08 | Tdk株式会社 | 磁阻效应元件 |
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