JPWO2011013775A1 - 太陽電池用透明導電性基板および太陽電池 - Google Patents

太陽電池用透明導電性基板および太陽電池 Download PDF

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Publication number
JPWO2011013775A1
JPWO2011013775A1 JP2011524839A JP2011524839A JPWO2011013775A1 JP WO2011013775 A1 JPWO2011013775 A1 JP WO2011013775A1 JP 2011524839 A JP2011524839 A JP 2011524839A JP 2011524839 A JP2011524839 A JP 2011524839A JP WO2011013775 A1 JPWO2011013775 A1 JP WO2011013775A1
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JP
Japan
Prior art keywords
oxide layer
tin oxide
transparent conductive
conductive substrate
substrate
Prior art date
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Withdrawn
Application number
JP2011524839A
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English (en)
Japanese (ja)
Inventor
雄志 松井
雄志 松井
謙一 南
謙一 南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of JPWO2011013775A1 publication Critical patent/JPWO2011013775A1/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
JP2011524839A 2009-07-30 2010-07-29 太陽電池用透明導電性基板および太陽電池 Withdrawn JPWO2011013775A1 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2009177702 2009-07-30
JP2009177702 2009-07-30
JP2010154101 2010-07-06
JP2010154101 2010-07-06
PCT/JP2010/062850 WO2011013775A1 (ja) 2009-07-30 2010-07-29 太陽電池用透明導電性基板および太陽電池

Publications (1)

Publication Number Publication Date
JPWO2011013775A1 true JPWO2011013775A1 (ja) 2013-01-10

Family

ID=43529427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011524839A Withdrawn JPWO2011013775A1 (ja) 2009-07-30 2010-07-29 太陽電池用透明導電性基板および太陽電池

Country Status (8)

Country Link
US (1) US20120125432A1 (https=)
EP (1) EP2461373A1 (https=)
JP (1) JPWO2011013775A1 (https=)
KR (1) KR20120037952A (https=)
CN (1) CN102473745A (https=)
IN (1) IN2012DN01227A (https=)
TW (1) TW201117391A (https=)
WO (1) WO2011013775A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012182161A (ja) * 2011-02-28 2012-09-20 Ulvac Japan Ltd 薄膜太陽電池、及び薄膜太陽電池の製造方法
JPWO2012169602A1 (ja) * 2011-06-08 2015-02-23 旭硝子株式会社 透明導電膜付き基板
CN114270530B (zh) 2019-08-09 2025-06-06 美光科技公司 晶体管及形成晶体管的方法
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
US10964811B2 (en) * 2019-08-09 2021-03-30 Micron Technology, Inc. Transistor and methods of forming transistors
EP4084104A4 (en) * 2019-12-24 2023-06-07 Panasonic Intellectual Property Management Co., Ltd. SOLAR CELL
US11637175B2 (en) 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors
CN115117022B (zh) * 2022-03-03 2026-04-24 晶科能源(海宁)有限公司 光伏电池及其形成方法、光伏组件

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027229A1 (ja) * 2003-08-29 2005-03-24 Asahi Glass Company, Limited 透明導電膜付き基体およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4460108B2 (ja) 1999-05-18 2010-05-12 日本板硝子株式会社 光電変換装置用基板の製造方法
JP2002260448A (ja) 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
WO2004102677A1 (ja) 2003-05-13 2004-11-25 Asahi Glass Company, Limited 太陽電池用透明導電性基板およびその製造方法
JPWO2007058118A1 (ja) 2005-11-17 2009-04-30 旭硝子株式会社 太陽電池用透明導電性基板およびその製造方法
JP2009177702A (ja) 2008-01-28 2009-08-06 Nec Corp 情報通信システム、端末、アクセス装置、加入者情報収容装置、サービスプロファイル送信方法及びプログラム
JP2010154101A (ja) 2008-12-24 2010-07-08 Olympus Imaging Corp 撮像装置および撮像装置用プログラム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027229A1 (ja) * 2003-08-29 2005-03-24 Asahi Glass Company, Limited 透明導電膜付き基体およびその製造方法

Also Published As

Publication number Publication date
TW201117391A (en) 2011-05-16
CN102473745A (zh) 2012-05-23
KR20120037952A (ko) 2012-04-20
EP2461373A1 (en) 2012-06-06
IN2012DN01227A (https=) 2015-04-10
WO2011013775A1 (ja) 2011-02-03
US20120125432A1 (en) 2012-05-24

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