JPWO2010100950A1 - 集光照射基板を用いた半導体薄膜の製造方法、半導体薄膜の製造装置、半導体薄膜の選択成長方法、および半導体素子 - Google Patents
集光照射基板を用いた半導体薄膜の製造方法、半導体薄膜の製造装置、半導体薄膜の選択成長方法、および半導体素子 Download PDFInfo
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Abstract
Description
本発明の一実施の形態について図1ないし図11に基づいて説明すると以下のとおりである。実施の形態1では、本発明に係る半導体薄膜の製造方法によって、基板上に周期極性反転構造を有する窒化ガリウム(GaN)薄膜を形成する場合について説明する。
本発明の第2の実施の形態について図12の(a)〜(h)に基づいて説明すれば、以下のとおりである。なお、実施の形態2において説明すること以外の構成は、実施の形態1と同じである。また、説明の便宜上、実施の形態1の図面に示した部材と同一の機能を有する部材については、同一の符号を付し、その説明を省略する。
本発明の第3の実施の形態について図13〜図24に基づいて説明すれば、以下のとおりである。実施の形態3では、図2に示す半導体薄膜の製造装置6の他の実施の形態について説明する。なお、実施の形態3において説明すること以外の構成は、前記実施の形態1および2と同じである。
2 有機薄膜
3 カーボン層(成長抑制層)
4 GaN薄膜(半導体薄膜)
4a Ga面極性のGaN薄膜(半導体薄膜)
4b N面極性のGaN薄膜(半導体薄膜)
4c 異種薄膜(半導体薄膜)
5 改質表面
6 半導体薄膜の製造装置
7 基板表面前処理手段
8 集光照射手段
9 薄膜成長手段
10 基板表面処理手段
11 集光レンズ
12 パルス光(光)
12a パルスレーザ光(光)
13 基準ドット(基準点)
20 光集積回路
21 サファイア基板(基板)
24 GaN層
25 リッジ型光導波路
30 集光部
31 光源
32 シャッター
33 ダイクロイックミラー
34 集光レンズ
40 支持部
41 ステージ(ピエゾ制御型ステージ)
50 観察部
51 ミラー
52 レンズ
53 撮像素子
54 増幅器
55 光源(照明用光源)
60 制御部
61 ロックイン増幅器
62 制御PC
63 支持部(ピエゾ)ドライバ
64 発振器
70 入力部
71 温度調節部
72 温度計
73 温度制御PC
74 基板加熱機構駆動部
75 基板加熱機構
76 ガス導入部
77 処理室
78 保持部
100 半導体薄膜の製造装置
101 基板表面前処理手段
102 有機薄膜塗布手段
103 集光照射手段
104 第1の薄膜成長手段
105 基板表面処理手段
106 第2の薄膜成長手段
Claims (15)
- 基板の表面を前処理する基板表面前処理手段と、
前処理された前記基板に有機薄膜を塗布する有機薄膜塗布手段と、
前記有機薄膜が塗布された前記基板に光を集光照射して、膜厚制御しながら成長抑制層を形成する集光照射手段と、
前記成長抑制層の周りに半導体薄膜を選択成長させる第1の薄膜成長手段と、
前記成長抑制層を除去して前記基板の表面を露出させた後、露出した前記基板の表面を改質する基板表面処理手段と、
改質後の前記基板の表面および前記半導体薄膜上に、半導体薄膜をさらに成長させる第2の薄膜成長手段と、
を備えることを特徴とする半導体薄膜の製造装置。 - 前記集光照射手段は、
前記基板を載置して水平または垂直方向に走査可能な支持部と、
前記支持部に載置された前記基板の表面に対して光を集光照射する集光部と、
前記基板の表面の光学像を観察して前記集光部から照射される光の集光点と前記基板の表面との距離を把握する観察部と、
前記観察部の観察結果に基づいて前記支持部を走査して、前記集光部に対する前記基板の位置決めを行う制御部と、
を備えることを特徴とする請求項1に記載の半導体薄膜の製造装置。 - 前記集光照射手段は、前記集光部から照射される光の集光点と前記基板の表面との距離、光強度、または走査速度を制御することにより、所望の厚さの前記成長抑制層を形成することを特徴とする請求項2に記載の半導体薄膜の製造装置。
- 前記支持部は、前記集光部から照射される光の集光点と前記基板との距離を一定に保持可能な、ピエゾ制御型ステージからなることを特徴とする請求項2または3に記載の半導体薄膜の製造装置。
- 前記集光照射手段は、前記支持部に載置された前記基板の裏面に対向する位置に、前記基板の表面に形成された基準点に対して前記基板の裏面から照明光を照射する照明用光源を備え、
前記観察部は、前記照明用光源により照明された前記基準点の光学像を撮像する撮像素子を備えており、
前記撮像素子は、前記基板を特定振動数で垂直方向に微小振動させたときの、前記基準点の光学像の大きさの変化を交流信号に変換し、
前記制御部は、前記特定振動数に対応する周波数の前記交流信号の振幅強度が最小となるように前記支持部を走査して、前記集光部に対する前記基板の位置決めを行うことを特徴とする請求項2に記載の半導体薄膜の製造装置。 - 前記基板表面処理手段は、
前記基板を保持する保持部と、
前記基板の表面温度を制御する温度調節部と、
ガス雰囲気を調節するガス導入部と、
前記ガス導入部と前記保持部とを格納する処理室と、
を備えることを特徴とする請求項1から3のいずれか1項に記載の半導体薄膜の製造装置。 - 基板に有機薄膜を塗布し、
前記有機薄膜を塗布した前記基板に光を集光照射して炭素を含む成長抑制層を形成し、
前記成長抑制層の周りに半導体薄膜を選択成長させ、
前記成長抑制層を除去することによって前記基板の表面を露出させ、
露出した前記基板の表面を改質させ、
改質後の前記基板の表面および前記半導体薄膜上に、半導体薄膜をさらに成長させることを特徴とする半導体薄膜の製造方法。 - 前記半導体薄膜は、窒化物薄膜であることを特徴とする請求項7に記載の半導体薄膜の製造方法。
- 前記成長抑制層を、高温環境で水素、或いはアンモニアを含むガス雰囲気中に前記基板を導入することによって除去することを特徴とする請求項7または8に記載の半導体薄膜の製造方法。
- 露出した前記基板の表面を、高温環境で水素、およびアンモニアを含むガス雰囲気中に前記基板を導入することによって改質させることを特徴とする請求項7または8に記載の半導体薄膜の製造方法。
- 前記光は、パルスレーザ光であることを特徴とする請求項7または8に記載の半導体薄膜の製造方法。
- 前記基板は、高温水素処理したサファイア基板であることを特徴とする請求項7または8に記載の半導体薄膜の製造方法。
- 前記半導体薄膜を有機金属気相成長法によって成長させることを特徴とする請求項7または8に記載の半導体薄膜の製造方法。
- 基板に有機薄膜を塗布し、
前記有機薄膜を塗布した前記基板に光を集光照射して炭素を含む成長抑制層を形成し、
前記成長抑制層の周りに半導体薄膜を選択成長させ、
前記成長抑制層を除去することを特徴とする半導体薄膜の選択成長方法。 - 請求項7または8に記載の半導体薄膜の製造方法によって製造された半導体薄膜を備えることを特徴とする半導体素子。
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US9747408B2 (en) * | 2015-08-21 | 2017-08-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Generating final mask pattern by performing inverse beam technology process |
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