JPWO2010026956A1 - 半導体装置及びその製造方法 - Google Patents
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Abstract
Description
本発明の第1の実施の形態に係る半導体装置の構成について説明する。図3は、本発明の第1の実施の形態に係る半導体装置の構成を示す断面図である。半導体装置は、半導体基板1、半導体素子配線2、半導体素子配線用ビア3、半導体素子最上層配線4、スーパーコネクト絶縁層9、スーパーコネクトビア8、スーパーコネクト配線10、及びバンプ7を具備する。
なお、上記例では、図4Bにおいて、従来の半導体素子の設計を変更せず、電源用パッド4vと信号用パッド4sとグランド用パッド4gをほぼ同一の大きさで形成し、その後に図4Cにおいて、レーザ等により、信号用パッド4sの面積を小さくしている。しかし、本発明はこの例に限定されるものではない。すなわち、図4Bにおいて、従来の半導体素子の設計を変更し、電源用パッド4v及びグランド用パッド4gよりも、信号用パッド4sの面積を小さく形成することも可能である。その場合、レーザ等による信号パッド4sの縮小化工程(図4C)を不要とすることができる。
本発明の第2の実施の形態に係る半導体装置の構成について説明する。図6は、本発明の第2の実施の形態に係る半導体装置の構成を示す断面図である。半導体装置は、半導体基板1、半導体素子配線2、半導体素子配線用ビア3、半導体素子最上層配線4、スーパーコネクト絶縁層9、スーパーコネクトビア8、スーパーコネクト配線10、及びバンプ7を具備する。ここで、半導体基板1、半導体素子配線2、半導体素子配線用ビア3、及び半導体素子最上層配線4については、第1の実施の形態と同様である。
本発明の第3の実施の形態に係る半導体装置の構成について説明する。図7は、本発明の第3の実施の形態に係る半導体装置の構成を示す断面図である。半導体装置は、半導体基板1、半導体素子配線2、半導体素子配線用ビア3、半導体素子最上層配線4、スーパーコネクト絶縁層9、スーパーコネクトビア8、スーパーコネクト配線10、及びバンプ7を具備する。ここで、各構成は、基本的に第2の実施の形態と同様である。ただし、以下の点につき第2の実施の形態と異なる。
本発明の第4の実施の形態に係る半導体装置の構成について説明する。図8は、本発明の第4の実施の形態に係る半導体装置の構成を示す断面図である。半導体装置は、半導体基板1、半導体素子配線2、半導体素子配線用ビア3、半導体素子最上層配線4、スーパーコネクト絶縁層9、スーパーコネクトビア8、スーパーコネクト配線10、及びバンプ7を具備する。ここで、各構成は、基本的に第3の実施の形態と同様である。ただし、以下の点につき第3の実施の形態と異なる。
本発明の第5の実施の形態に係る半導体装置の構成について説明する。図10は、本発明の第5の実施の形態に係る半導体装置の構成を示す断面図である。半導体装置は、半導体基板1、半導体素子配線2、半導体素子配線用ビア3、半導体素子最上層配線4、スーパーコネクト絶縁層9、スーパーコネクトビア8、スーパーコネクト配線10、及びバンプ7を具備する。ここで、各構成は、基本的に第4の実施の形態と同様である。
Claims (14)
- 半導体素子を有する半導体基板上に複数の絶縁層を介して設けられた素子配線と、
前記素子配線上に設けられた素子最上層配線と、
前記素子最上層配線上に設けられたスーパーコネクト絶縁層とスーパーコネクトビアとスーパーコネクト配線を備える配線層と、
前記スーパーコネクト配線上に設けられたバンプとを具備し、
前記素子最上層配線は、信号用パッドと電源用パッドとグランド用パッドを備え、
前記信号用パッドの面積は、前記電源用パッド及び前記グランド用パッドの面積よりも小さく、
前記電源用パッド及びグランド用パッドの少なくとも一つに複数の前記スーパーコネクトビアが設けられている
半導体装置。 - 信号用の前記スーパーコネクトビアと信号用の前記スーパーコネクト配線との接続部は、電源用の前記スーパーコネクトビアと電源用の前記スーパーコネクト配線との接続部、及び、グランド用の前記スーパーコネクトビアとグランド用の前記スーパーコネクト配線との接続部の少なくとも一方よりも面積が小さい
請求の範囲1に記載の半導体装置。 - 前記スーパーコネクト絶縁層は、前記絶縁層より厚い
請求の範囲1又は2に記載の半導体装置。 - 前記スーパーコネクト絶縁層が、前記絶縁層の5倍以上の厚さを有する
請求の範囲3に記載の半導体装置。 - 前記スーパーコネクト配線が、前記素子配線及び前記素子最上層配線より厚い
請求の範囲1又は2に記載の半導体装置。 - 前記スーパーコネクト配線が、前記素子配線及び前記素子最上層配線の3倍以上の厚さを有する
請求の範囲5に記載の半導体装置。 - 前記スーパーコネクト絶縁層が、前記絶縁層より厚く、前記スーパーコネクト配線が、前記素子配線及び前記素子最上層配線より厚い
請求の範囲1又は2に記載の半導体装置。 - 前記スーパーコネクト絶縁層が、前記絶縁層の5倍以上の厚さを有し、前記スーパーコネクト配線が、前記素子配線及び前記素子最上層配線の3倍以上の厚さを有する
請求の範囲7に記載の半導体装置。 - 前記電源用パッド及び前記グランド用パッドの少なくとも一方のパッドは、当該パッドと前記スーパーコネクト配線で接続される前記バンプを前記素子最上層配線へ投影したとき、前記投影像よりも外部へ延在している
請求の範囲1乃至8のいずれか一項に記載の半導体装置。 - 前記配線層が、二層以上の多層構造を有する
請求の範囲1乃至9のいずれか一項に記載の半導体装置。 - 前記多層構造において、一層の前記スーパーコネクト配線が電源プレーンであり、他の一層の前記スーパーコネクト配線がグランドプレーンである
請求の範囲10に記載の半導体装置。 - 前記グランドプレーンを有する前記配線層において、前記グランドプレーンと隣接して、信号用の前記スーパーコネクト配線が引き回されている
請求の範囲11に記載の半導体装置。 - (a)半導体基板上に半導体素子を形成する工程と、
(b)前記半導体基板上に複数の絶縁層を介して設けられた素子配線を形成する工程と、
(c)前記素子配線上に、信号用パッドと電源用パッドとグランド用パッドを備える素子最上層配線を形成する工程と、
(d)前記素子最上層配線上に、前記絶縁層の5倍以上の厚さを有するスーパーコネクト絶縁層と、前記スーパーコネクト絶縁層内に埋め込まれたスーパーコネクトビアとを形成する工程と、
(e)前記スーパーコネクトビア上に、配線厚さが前記素子配線及び前記素子最上層配線の3倍以上の厚さを有するスーパーコネクト配線を形成する工程と、
(f)前記スーパーコネクト配線上に形成されるバンプを形成する工程とを具備し、
前記(c)工程は、
(c1)前記信号用パッドの面積を、前記電源用パッド及び前記グランド用パッドよりも小さくする工程を備え、
前記(d)工程は、
(d1)前記電源用パッドと前記グランド用パッドの少なくとも一つに複数の前記スーパーコネクトビアを形成する工程を備える
半導体装置の製造方法。 - 前記(c1)工程は、レーザによるトリミングである
請求の範囲13に記載の半導体装置の製造方法。
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Citations (12)
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JPH09306917A (ja) * | 1996-05-13 | 1997-11-28 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH10242332A (ja) * | 1997-02-25 | 1998-09-11 | Casio Comput Co Ltd | 半導体装置 |
JP2000100814A (ja) * | 1998-09-18 | 2000-04-07 | Hitachi Ltd | 半導体装置 |
JP2000311964A (ja) * | 1999-04-27 | 2000-11-07 | Nec Corp | 半導体装置 |
JP2001284537A (ja) * | 2000-04-03 | 2001-10-12 | Nec Corp | 半導体装置およびその製造方法 |
JP2002359321A (ja) * | 2001-05-31 | 2002-12-13 | Tdk Corp | 電力増幅モジュール、回路要素集合基板及び回路要素特性調整方法 |
JP2003338541A (ja) * | 2002-05-20 | 2003-11-28 | Fujitsu Ltd | 半導体装置 |
JP2006032600A (ja) * | 2004-07-15 | 2006-02-02 | Nec Corp | 半導体装置 |
WO2007040229A1 (ja) * | 2005-10-03 | 2007-04-12 | Rohm Co., Ltd. | 半導体装置 |
JP2008108825A (ja) * | 2006-10-24 | 2008-05-08 | Denso Corp | 半導体装置 |
JP2008147224A (ja) * | 2006-12-06 | 2008-06-26 | Sony Corp | 半導体装置の製造方法および半導体装置 |
WO2008126468A1 (ja) * | 2007-03-30 | 2008-10-23 | Nec Corporation | 半導体装置及び半導体装置の製造方法 |
-
2009
- 2009-09-01 WO PCT/JP2009/065241 patent/WO2010026956A1/ja active Application Filing
- 2009-09-01 JP JP2010527783A patent/JPWO2010026956A1/ja active Pending
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JPH09306917A (ja) * | 1996-05-13 | 1997-11-28 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH10242332A (ja) * | 1997-02-25 | 1998-09-11 | Casio Comput Co Ltd | 半導体装置 |
JP2000100814A (ja) * | 1998-09-18 | 2000-04-07 | Hitachi Ltd | 半導体装置 |
JP2000311964A (ja) * | 1999-04-27 | 2000-11-07 | Nec Corp | 半導体装置 |
JP2001284537A (ja) * | 2000-04-03 | 2001-10-12 | Nec Corp | 半導体装置およびその製造方法 |
JP2002359321A (ja) * | 2001-05-31 | 2002-12-13 | Tdk Corp | 電力増幅モジュール、回路要素集合基板及び回路要素特性調整方法 |
JP2003338541A (ja) * | 2002-05-20 | 2003-11-28 | Fujitsu Ltd | 半導体装置 |
JP2006032600A (ja) * | 2004-07-15 | 2006-02-02 | Nec Corp | 半導体装置 |
WO2007040229A1 (ja) * | 2005-10-03 | 2007-04-12 | Rohm Co., Ltd. | 半導体装置 |
JP2008108825A (ja) * | 2006-10-24 | 2008-05-08 | Denso Corp | 半導体装置 |
JP2008147224A (ja) * | 2006-12-06 | 2008-06-26 | Sony Corp | 半導体装置の製造方法および半導体装置 |
WO2008126468A1 (ja) * | 2007-03-30 | 2008-10-23 | Nec Corporation | 半導体装置及び半導体装置の製造方法 |
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