JPWO2008066209A1 - 薄膜付きダイヤモンド単結晶の製造方法、及び薄膜付きダイヤモンド単結晶 - Google Patents
薄膜付きダイヤモンド単結晶の製造方法、及び薄膜付きダイヤモンド単結晶 Download PDFInfo
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 202
- 239000010432 diamond Substances 0.000 title claims abstract description 202
- 239000010409 thin film Substances 0.000 title claims abstract description 196
- 239000013078 crystal Substances 0.000 title claims abstract description 124
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 60
- 125000004437 phosphorous atom Chemical group 0.000 claims abstract description 29
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000003746 surface roughness Effects 0.000 claims description 58
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 40
- 239000011574 phosphorus Substances 0.000 claims description 40
- 239000012071 phase Substances 0.000 claims description 20
- 238000001947 vapour-phase growth Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 21
- 239000007789 gas Substances 0.000 description 66
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 50
- 230000015572 biosynthetic process Effects 0.000 description 44
- 238000003786 synthesis reaction Methods 0.000 description 44
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 33
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 14
- 238000011156 evaluation Methods 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 150000002431 hydrogen Chemical class 0.000 description 8
- 239000012808 vapor phase Substances 0.000 description 7
- 238000005498 polishing Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 4
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- WMMGRPSGJRRNLN-UHFFFAOYSA-N 1-$l^{1}-phosphanylbutane Chemical group CCCC[P] WMMGRPSGJRRNLN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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Abstract
Description
11 単結晶基板の主面
20 リンドープダイヤモンドエピタキシャル薄膜付きダイヤモンド単結晶
21 リンドープダイヤモンドエピタキシャル薄膜
Claims (10)
- ダイヤモンド単結晶基板の主面上に、300Kでの抵抗率が300Ωcm以下の低抵抗リンドープエピタキシャル薄膜を気相成長させる方法であって、該ダイヤモンド単結晶基板の主面が{111}面を基準として0.50°以上のオフ角を有し、且つ気相成長の原料ガス中のリン原子が炭素原子の3%以上であることを特徴とする、低抵抗リンドープダイヤモンドエピタキシャル薄膜付きダイヤモンド単結晶の製造方法。
- ダイヤモンド単結晶基板の主面上に、300Kでの抵抗率が100Ωcm以下の低抵抗リンドープエピタキシャル薄膜を気相成長させる方法であって、該ダイヤモンド単結晶基板の主面が{111}面を基準として0.50°以上のオフ角を有し、該主面の法線ベクトルが{111}面の法線ベクトルに対して[110]方向から40°以内の方位に傾いており、且つ気相成長の原料ガス中のリン原子が炭素原子の3%以上であることを特徴とする、低抵抗リンドープダイヤモンドエピタキシャル薄膜付きダイヤモンド単結晶の製造方法。
- ダイヤモンド単結晶基板の主面上に、300Kでの抵抗率が100Ωcm以下の低抵抗リンドープエピタキシャル薄膜を気相成長させる方法であって、該ダイヤモンド単結晶基板の主面が{111}面を基準として0.50°以上のオフ角を有し、該主面の法線ベクトルが{111}面の法線ベクトルに対して[211]方向から40°以内の方位に傾いており、且つ気相成長の原料ガス中のリン原子が炭素原子の3%以上であることを特徴とする、低抵抗リンドープダイヤモンドエピタキシャル薄膜付きダイヤモンド単結晶の製造方法。
- 前記主面の表面粗さは10nm以上であることを特徴とする、請求項1〜3のいずれかに記載のリンドープダイヤモンドエピタキシャル薄膜付きダイヤモンド単結晶の製造方法。
- {111}面を基準としたオフ角を有する面を主面に持つダイヤモンド単結晶の該主面に低抵抗リンドープダイヤモンドエピタキシャル薄膜を成長した薄膜付きダイヤモンド単結晶であって、該薄膜表面が{111}面から0.50°以上のオフ角を有し、且つ、該低抵抗リンドープダイヤモンドエピタキシャル薄膜の抵抗率が300Kにおいて300Ωcm以下であることを特徴とする、低抵抗リンドープダイヤモンドエピタキシャル薄膜付きダイヤモンド単結晶。
- 前記低抵抗リンドープダイヤモンドエピタキシャル薄膜のリン濃度は5.0×1019cm−3以上であることを特徴とする、請求項5に記載の低抵抗リンドープダイヤモンドエピタキシャル薄膜付きダイヤモンド単結晶。
- {111}面を基準としたオフ角を有する面を主面に持つダイヤモンド単結晶の該主面に低抵抗リンドープダイヤモンドエピタキシャル薄膜を成長した薄膜付きダイヤモンド単結晶であって、該薄膜表面が{111}面から0.50°以上のオフ角を有し、該薄膜の法線ベクトルが{111}面の法線ベクトルに対して[110]方向から40°以内の方位に傾いており、且つ、該低抵抗リンドープダイヤモンドエピタキシャル薄膜の抵抗率が300Kにおいて100Ωcm以下であることを特徴とする、低抵抗リンドープダイヤモンドエピタキシャル薄膜付きダイヤモンド単結晶。
- {111}面を基準としたオフ角を有する面を主面に持つダイヤモンド単結晶の該主面に低抵抗リンドープダイヤモンドエピタキシャル薄膜を成長した薄膜付きダイヤモンド単結晶であって、該薄膜表面が{111}面から0.50°以上のオフ角を有し、該薄膜の法線ベクトルが{111}面の法線ベクトルに対して[211]方向から40°以内の方位に傾いており、且つ、該低抵抗リンドープダイヤモンドエピタキシャル薄膜の抵抗率が300Kにおいて100Ωcm以下であることを特徴とする、低抵抗リンドープダイヤモンドエピタキシャル薄膜付きダイヤモンド単結晶。
- 前記低抵抗リンドープダイヤモンドエピタキシャル薄膜のリン濃度は8.6×1019cm−3以上であることを特徴とする、請求項7または8に記載の低抵抗リンドープダイヤモンドエピタキシャル薄膜付きダイヤモンド単結晶。
- 前記薄膜表面の表面粗さは10nm以上であることを特徴とする、請求項5、7、8のいずれかに記載の低抵抗リンドープダイヤモンドエピタキシャル薄膜付きダイヤモンド単結晶。
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US (1) | US8119241B2 (ja) |
EP (1) | EP2226413B1 (ja) |
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JP4784915B2 (ja) * | 2005-02-03 | 2011-10-05 | 独立行政法人産業技術総合研究所 | リン原子がドープされたn型(100)面方位ダイヤモンド半導体単結晶膜及びその製造方法 |
JP5454867B2 (ja) * | 2009-04-17 | 2014-03-26 | 独立行政法人産業技術総合研究所 | 単結晶ダイヤモンド基板 |
US9966161B2 (en) * | 2015-09-21 | 2018-05-08 | Uchicago Argonne, Llc | Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics |
CN107923067B (zh) * | 2015-10-19 | 2023-04-28 | 住友电气工业株式会社 | 单晶金刚石、使用单晶金刚石的工具以及单晶金刚石的制造方法 |
JP7078947B2 (ja) * | 2017-02-06 | 2022-06-01 | 信越化学工業株式会社 | ダイヤモンド製膜用下地基板及びそれを用いたダイヤモンド基板の製造方法 |
CN110571310B (zh) * | 2019-09-20 | 2020-11-17 | 西安交通大学 | 一种(100)取向n型单晶金刚石电极欧姆接触形成方法 |
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JP2005162525A (ja) * | 2003-12-02 | 2005-06-23 | Sumitomo Electric Ind Ltd | 単結晶ダイヤモンド |
JP2006303131A (ja) * | 2005-04-20 | 2006-11-02 | Sumitomo Electric Ind Ltd | ダイヤモンド半導体の製造方法及びダイヤモンド半導体 |
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JP3051912B2 (ja) | 1996-09-03 | 2000-06-12 | 科学技術庁無機材質研究所長 | リンドープダイヤモンドの合成法 |
US7063742B1 (en) * | 1999-03-26 | 2006-06-20 | Japan Science And Technology Agency | N-type semiconductor diamond and its fabrication method |
JP4784915B2 (ja) | 2005-02-03 | 2011-10-05 | 独立行政法人産業技術総合研究所 | リン原子がドープされたn型(100)面方位ダイヤモンド半導体単結晶膜及びその製造方法 |
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US8119241B2 (en) | 2012-02-21 |
EP2226413B1 (en) | 2016-10-12 |
CN101400833B (zh) | 2012-05-02 |
JP5332609B2 (ja) | 2013-11-06 |
WO2008066209A1 (fr) | 2008-06-05 |
US20090169814A1 (en) | 2009-07-02 |
EP2226413A4 (en) | 2011-05-11 |
CN101400833A (zh) | 2009-04-01 |
EP2226413A1 (en) | 2010-09-08 |
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