JPWO2007114155A1 - プラズマ原子層成長方法及び装置 - Google Patents
プラズマ原子層成長方法及び装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 44
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 230000005404 monopole Effects 0.000 claims abstract description 55
- 238000001179 sorption measurement Methods 0.000 claims abstract description 41
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims description 126
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 37
- 150000002894 organic compounds Chemical class 0.000 claims description 29
- 230000001590 oxidative effect Effects 0.000 claims description 26
- 238000005121 nitriding Methods 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 11
- 239000000376 reactant Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 230000003028 elevating effect Effects 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 19
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 15
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 239000002052 molecular layer Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 83
- 239000010409 thin film Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010926 purge Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
Description
Claims (10)
- モノポールアンテナが配置された成膜室の内部で、有機化合物からなる原料ガスを加熱した基板の表面に供給して、前記有機化合物が前記基板の表面に吸着した吸着層が形成された状態とする第1工程と、
前記原料ガスの供給を停止した後、前記成膜室の内部より前記原料ガスを除去する第2工程と、
前記成膜室の内部に反応物質を含む反応ガスを導入し、前記モノポールアンテナに高周波を供給して前記反応ガスのプラズマを発生させて原子状物質が生成された状態とし、前記原子状物質を前記吸着層に化合させて前記基板の上に前記吸着層に前記反応物質が化合した化合物層が形成された状態とする第3工程と
を少なくとも備えることを特徴とするプラズマ原子層成長方法。 - 請求項1記載のプラズマ原子層成長方法において、
前記反応物質は、酸素及び窒素から選択されたものである
ことを特徴とする プラズマ原子層成長方法。 - 請求項1記載のプラズマ原子層成長方法において、
前記第3工程では、前記モノポールアンテナと前記基板との距離を、前記第1工程より離間させる
ことを特徴とするプラズマ原子層成長方法。 - モノポールアンテナが配置された成膜室の内部で、有機化合物からなる原料ガスを加熱した基板の表面に供給して、前記有機化合物が前記基板の表面に吸着した吸着層が形成された状態とする第1工程と、
前記原料ガスの供給を停止した後、前記成膜室の内部より前記原料ガスを除去する第2工程と、
前記成膜室の内部に酸素を含む酸化ガスを導入し、前記モノポールアンテナに高周波を供給して前記酸化ガスのプラズマを発生させて原子状酸素が生成された状態とし、前記原子状酸素により前記吸着層を酸化して前記基板の上に酸化層が形成された状態とする第3工程と
を少なくとも備えることを特徴とするプラズマ原子層成長方法。 - 成膜室の内部で、有機化合物からなる原料ガスを加熱した基板の表面に供給して、前記有機化合物が前記基板の表面に吸着した吸着層が形成された状態とする第1工程と、
前記原料ガスの供給を停止した後、前記成膜室の内部より前記原料ガスを除去する第2工程と、
前記成膜室の内部に窒素を含む窒化ガスを導入し、前記モノポールアンテナに高周波を供給して前記窒化ガスのプラズマを発生させて原子状窒素が生成された状態とし、前記原子状窒素により前記吸着層を窒化して前記基板の上に窒化層が形成された状態とする第3工程と
を少なくとも備えることを特徴とするプラズマ原子層成長方法。 - 密閉可能な成膜室と、
この成膜室の内部に配置されて処理対象の基板が載置される基板台と、
この基板台の上に載置され基板を加熱する加熱手段と、
前記成膜室に有機化合物からなる原料ガスを導入する原料ガス供給手段と、
前記成膜室に反応物質を含む反応ガスを導入する反応ガス供給手段と、
前記反応ガス供給手段により導入される反応ガスのプラズマを発生させるモノポールアンテナから構成されたプラズマ発生手段と、
前記成膜室の内部を排気する排気手段と
を少なくとも備え、
前記原料ガス供給手段により前記原料ガスが導入されることで、前記加熱手段により加熱された処理対象の基板に前記有機化合物からなる吸着層が形成された後、前記プラズマ発生手段により発生された前記反応ガスのプラズマより生成された原子状物質により前記吸着層に前記反応物質が化合される
ことを特徴とするプラズマ原子層成長装置。 - 請求項6記載のプラズマ原子層成長装置において、
前記反応物質は、酸素及び窒素から選択されたものである
ことを特徴とするプラズマ原子層成長装置。 - 請求項6記載のプラズマ原子層成長装置において、
前記モノポールアンテナと前記基板台との距離を可変する昇降手段を備える
ことを特徴とするプラズマ原子層成長装置。 - 密閉可能な成膜室と、
この成膜室の内部に配置されて処理対象の基板が載置される基板台と、
この基板台の上に載置され基板を加熱する加熱手段と、
前記成膜室に有機化合物からなる原料ガスを導入する原料ガス供給手段と、
前記成膜室に酸素を含む酸化ガスを導入する酸化ガス供給手段と、
前記酸化ガス供給手段により導入される酸化ガスのプラズマを発生するモノポールアンテナから構成されたプラズマ発生手段と、
前記成膜室の内部を排気する排気手段と
を少なくとも備え、
前記原料ガス供給手段により前記原料ガスが導入されることで、前記加熱手段により加熱された処理対象の基板に前記有機化合物からなる吸着層が形成された後、前記プラズマ発生手段により発生された前記酸化ガスのプラズマより生成された原子状酸素により前記吸着層が酸化される
ことを特徴とするプラズマ原子層成長装置。 - 密閉可能な成膜室と、
この成膜室の内部に配置されて処理対象の基板が載置される基板台と、
この基板台の上に載置され基板を加熱する加熱手段と、
前記成膜室に有機化合物からなる原料ガスを導入する原料ガス供給手段と、
前記成膜室に窒素を含む窒化ガスを導入する窒化ガス供給手段と、
前記窒化ガス供給手段により導入される窒化ガスのプラズマを発生するモノポールアンテナから構成されたプラズマ発生手段と、
前記成膜室の内部を排気する排気手段と
を少なくとも備え、
前記原料ガス供給手段により前記原料ガスが導入されることで、前記加熱手段により加熱された処理対象の基板に前記有機化合物からなる吸着層が形成された後、前記プラズマ発生手段により発生された前記窒化ガスのプラズマより生成された原子状窒素により前記吸着層が窒化される
ことを特徴とするプラズマ原子層成長装置。
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JP (1) | JP4820864B2 (ja) |
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US20110008550A1 (en) * | 2008-01-25 | 2011-01-13 | Mitsui Engineering & Shipbuilding Co., Ltd | Atomic layer growing apparatus and thin film forming method |
JP5078656B2 (ja) * | 2008-02-18 | 2012-11-21 | 三井造船株式会社 | 原子層成長装置 |
US8607733B2 (en) * | 2008-02-18 | 2013-12-17 | Mitsui Engineering & Shipbuilding Co., Ltd. | Atomic layer deposition apparatus and atomic layer deposition method |
US7704884B2 (en) * | 2008-04-11 | 2010-04-27 | Micron Technology, Inc. | Semiconductor processing methods |
JP4638550B2 (ja) | 2008-09-29 | 2011-02-23 | 東京エレクトロン株式会社 | マスクパターンの形成方法、微細パターンの形成方法及び成膜装置 |
US9376754B2 (en) | 2009-02-12 | 2016-06-28 | Mitsui Engineering & Shipbuilding | Thin film forming method |
JP4575984B2 (ja) * | 2009-02-12 | 2010-11-04 | 三井造船株式会社 | 原子層成長装置および薄膜形成方法 |
JP4967066B2 (ja) * | 2010-04-27 | 2012-07-04 | 東京エレクトロン株式会社 | アモルファスシリコン膜の成膜方法および成膜装置 |
KR101288130B1 (ko) * | 2011-07-13 | 2013-07-19 | 삼성디스플레이 주식회사 | 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법 |
JP5741382B2 (ja) | 2011-09-30 | 2015-07-01 | 東京エレクトロン株式会社 | 薄膜の形成方法及び成膜装置 |
JP6406811B2 (ja) * | 2013-11-20 | 2018-10-17 | 国立大学法人名古屋大学 | Iii 族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法 |
JP6528366B2 (ja) * | 2014-07-08 | 2019-06-12 | 豊田合成株式会社 | 縦型トレンチmosfetの製造方法 |
US9685325B2 (en) * | 2014-07-19 | 2017-06-20 | Applied Materials, Inc. | Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD |
KR20180002774A (ko) | 2015-05-02 | 2018-01-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 낮은 k 및 낮은 습식 에칭 레이트 유전체 박막들을 증착하기 위한 방법들 |
JP2018157188A (ja) * | 2017-03-15 | 2018-10-04 | 東京エレクトロン株式会社 | 被加工物を処理する方法 |
US10727045B2 (en) | 2017-09-29 | 2020-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing a semiconductor device |
JP2019071497A (ja) * | 2019-02-13 | 2019-05-09 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
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US7419903B2 (en) * | 2000-03-07 | 2008-09-02 | Asm International N.V. | Thin films |
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TWI356101B (ja) | 2012-01-11 |
JP4820864B2 (ja) | 2011-11-24 |
EP2006888A9 (en) | 2009-07-22 |
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