JP4575984B2 - 原子層成長装置および薄膜形成方法 - Google Patents
原子層成長装置および薄膜形成方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 41
- 238000000034 method Methods 0.000 title claims description 23
- 239000007789 gas Substances 0.000 claims description 82
- 239000010408 film Substances 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 59
- 230000001590 oxidative effect Effects 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 238000001514 detection method Methods 0.000 claims description 25
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 238000005121 nitriding Methods 0.000 claims description 12
- 125000002524 organometallic group Chemical group 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 description 16
- 238000007254 oxidation reaction Methods 0.000 description 12
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical class [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000005404 monopole Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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Description
例えば、下記特許文献1には、窒化タンタル膜のプラズマALDが記載されている。当該文献1では、還元のために用いるH2プラズマパルスの発生時間は、2000〜4000m秒に固定されて設定されている(当該文献[0064]参照)。
すなわち、原子層成長装置は、
(A)高周波電力の供給を受けてプラズマを断続的に発生させるプラズマ発生源と,このプラズマ発生源に対向する位置に、基板が載置される基板ステージとが配設された成膜容器と、
(B)前記基板上で発光する、655.3nm〜657.3nmの波長帯域に含まれる光の発光強度を、成膜容器に設けられた観測窓を介して検出する発光強度検出部と、
(C)断続的にプラズマが発生する毎に、検出される前記光の発光強度の中のピーク発光強度を基準として、前記発光強度検出部で検出した発光強度の値が所定値以下となるとき、前記プラズマ発生源の高周波電力の供給を停止する電力制御部と、を有する。
また、前記発光強度検出部は、655.3〜657.3nmを透過帯域として含むバンドパスフィルタを用いて発光強度を検出することが好ましい。
さらに、前記プラズマ発生源は、アンテナ、誘導電極、または平行平板電極、すなわち、電磁波結合型、誘導結合型、または容量結合型であることが好ましい。
すなわち、薄膜形成方法は、
(D)成膜容器内に有機金属ガスを断続的に導入して、基板上に有機金属の成分を吸着させるステップと、
(E)基板に有機金属の成分が吸着する毎に、前記成膜容器内に酸化ガスまたは窒化ガスを導入してプラズマを発生し、前記有機金属の成分を酸化または窒化させるステップと、
(F)前記プラズマを発生させる毎に、前記基板上で発光する、655.3nm〜657.3nmの波長帯域に含まれる光の発光強度を、成膜容器に設けられた観測窓を介して検出するステップと、
(G)断続的にプラズマが発生する毎に、検出される前記光の発光強度の中のピーク発光強度を基準として、検出した発光強度の値が所定値以下となるとき、プラズマの発生を停止するステップと、を有する。
また、前記発光強度を検出するとき、655.3〜657.3nmを透過帯域として含むバンドパスフィルタを用いて発光強度を検出することが好ましい。
また、前記プラズマの発生は、アンテナ、誘導電極、または平行平板電極、すなわち、電磁波結合型、誘導結合型、または容量結合型のプラズマ発生源を用いて行うことが好ましい。
図1は、本発明の原子層成長装置の一実施例であるALD装置の構成を表す概略図である。図2は、図1に示すALD装置におけるアンテナアレイと給電ユニットを説明する図である。
図2に示すように、分配器36は、電力供給部34で生成された高周波信号を各アンテナ素子26に供給する。分配器13から各アンテナ素子26にいたる給電線の長さは同じである。
また、アンテナ素子26のそれぞれは、基板ステージ32の基板載置面と平行な方向に配置される。さらに、複数のアンテナ素子26の配列方向は基板ステージ32の基板載置面と平行な方向である。
基板ステージ32は、成膜容器12の内壁面よりも小さい寸法の、例えば矩形の金属板であり、図示されないパワーシリンダ等の昇降機構により上下に昇降される。基板ステージ32には、薄膜を形成する基板42が載置される。
基板ステージ32に載置された基板42の上方の、成膜容器12の側壁には、石英等の透明部材により観測窓33が設けられている。
光検出センサ11aは、成膜容器12の外側の、観測窓33に対応する部分に設けられている。光検出センサ11aの受光面の前面には、所定の波長の光を透過するバンドパスフィルタが設けられている。これにより、光検出センサ11aは、特定の波長の光を受光して発光強度を検出するように構成されている。光検出センサ11aで出力した信号は、制御部11bに送られる。バンドパスフィルタは、656.3nmの水素ラジカルの発光を主に検出するために、655.3〜657.3nmの波長帯域を少なくとも透過帯域とする。
すなわち、プラズマ中で酸化ガスから解離生成した酸素ラジカルが、基板42上に吸着した水素原子を有する有機金属分子と反応し、その際に生成する水素ラジカルがプラズマ中で励起され特定の光を放出する。光検出センサ11aはこの放出した光を検出し、この検出結果がプラズマの発生の制御に用いられる。
電力供給部34は、制御部11bの指示に応じて、例えば、80MHz等の高周波信号を生成する部分である。
制御部11bは、このようなとき、T1秒を酸化反応の開始時期とし、T2秒を酸化反応の終了時期として、光検出センサ11aの光強度の検出および電力供給部34の電力の供給を制御する。
上記例において、プラズマ発生時間は(T2−T1)秒であり、例えばαを1/e(eは、自然対数の底)としたとき、プラズマ発生時間(T2−T1) 秒は略数10m秒である。このプラズマ発生時間は、従来のような数100m秒〜数秒に固定されたプラズマ発生時間に比べて極めて短い。
上記実施形態では、光検出センサ11aを用いて酸化反応の進行を、水素ラジカルの発光により知ることができるので、酸化反応が終了した状態を知ることができる。また、基板に形成された薄膜は、プラズマに不必要に長時間晒されないので、薄膜の膜厚および特性が従来に比べて均一になる。さらに、不必要なプラズマ発生時間がなくなるので薄膜の形成を短時間に効率よく行うことができる。
プラズマが発生し、酸化反応が発生したとき、基板上で水素ラジカルが発生する。この水素ラジカルが励起され安定化するとき発光し、この光の発光強度が、成膜容器12に設けられた観測窓33を介して光検出センサ11aで検出される。制御部11bは、検出した発光強度の値が所定値以下になるとき、プラズマの発生を停止するように、電力供給部34からの電力の供給を停止する。なお、有機金属のガスおよび酸化ガスを交互に置換して流すとき、ガスの置換時、不活性ガス等を流すことにより成膜室28内のガスを正確に入れ替えるようにするとよい。
さらに、プラズマの発生は、プラズマ発生源としてアンテナを用いる電磁波結合型の替わりに、誘導結合型あるいは容量結合型の発生源を用いて行うこともできる。すなわち、プラズマを発生させる装置であれば特に制限されない。
11 給電ユニット
11a 光検出センサ
11b 制御部
11c 反射電力計測部
12 成膜容器
14,15 ガス供給部
16,17 排気部
22,23 供給管
24,25 排気孔
26 アンテナ素子
28 成膜室
29 シャワーヘッド
30 ヒータ
32 基板ステージ
38 インピーダンス整合器
39 モノポールアンテナ
42 基板
40 円筒部材
Claims (8)
- 水素を含む有機金属の成分を吸着した基板に酸化ガスあるいは窒化ガスを用いてプラズマを発生させて薄膜を形成する原子層成長装置であって、
高周波電力の供給を受けてプラズマを断続的に発生させるプラズマ発生源と、このプラズマ発生源に対向する位置に、基板が載置される基板ステージとが配設された成膜容器と、
前記基板上で発光する、655.3nm〜657.3nmの波長帯域に含まれる光の発光強度を、成膜容器に設けられた観測窓を介して検出する発光強度検出部と、
断続的にプラズマが発生する毎に検出される前記光の発光強度の中のピーク発光強度を基準として、前記発光強度検出部で検出した発光強度の値が所定値以下となるとき、前記プラズマ発生源の高周波電力の供給を停止する電力制御部と、を有することを特徴とする原子層成長装置。 - 前記電力制御部は、前記プラズマ発生源に供給する高周波電力の反射電力を計測し、反射電力が予め設定された値以下になった時点を基準として、前記発光強度の値の検出を開始する、請求項1に記載の原子層成長装置。
- 前記発光強度検出部は、655.3〜657.3nmを透過帯域として含むバンドパスフィルタを用いて発光強度を検出する、請求項1または2に記載の原子層成長装置。
- 前記プラズマ発生源は、アンテナ、誘導電極、または平行平板電極である、請求項1〜3のいずれか1項に記載の原子層成長装置。
- 水素を含む有機金属の成分を吸着した基板に酸化ガスあるいは窒化ガスを用いてプラズマを発生させて薄膜を形成する薄膜形成方法であって、
成膜容器内に有機金属ガスを断続的に導入して、基板上に有機金属の成分を吸着させるステップと、
基板に有機金属の成分が吸着する毎に、前記成膜容器内に酸化ガスまたは窒化ガスを導入してプラズマを発生し、前記有機金属の成分を酸化または窒化させるステップと、
前記プラズマを発生させる毎に、前記基板上で発光する、655.3nm〜657.3nmの波長帯域に含まれる光の発光強度を、成膜容器に設けられた観測窓を介して検出するステップと、
断続的にプラズマが発生する毎に検出される前記光の発光強度の中のピーク発光強度を基準として、検出した発光強度の値が所定値以下となるとき、プラズマの発生を停止するステップと、を有することを特徴とする薄膜形成方法。 - 前記発光強度を検出するとき、プラズマを発生させる発生手段に高周波電力を供給するときの反射電力を計測し、この反射電力が予め設定された値以下になった時点を基準として、前記発光強度の値の検出を開始する、請求項5に記載の薄膜形成方法。
- 前記発光強度を検出するとき、655.3〜657.3nmを透過帯域として含むバンドパスフィルタを用いて発光強度を検出する、請求項5または6に記載の薄膜形成方法。
- 前記プラズマの発生は、アンテナ、誘導電極、または平行平板電極のプラズマ発生源を用いて行う、請求項5〜7のいずれか1項に記載の薄膜形成方法。
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TW099104182A TWI512132B (zh) | 2009-02-12 | 2010-02-10 | Atomic layer growth device and film forming method |
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