JPS649890A - Apparatus for molecular beam growth - Google Patents
Apparatus for molecular beam growthInfo
- Publication number
- JPS649890A JPS649890A JP16569887A JP16569887A JPS649890A JP S649890 A JPS649890 A JP S649890A JP 16569887 A JP16569887 A JP 16569887A JP 16569887 A JP16569887 A JP 16569887A JP S649890 A JPS649890 A JP S649890A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silane gas
- substrate
- silane
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16569887A JPS649890A (en) | 1987-07-01 | 1987-07-01 | Apparatus for molecular beam growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16569887A JPS649890A (en) | 1987-07-01 | 1987-07-01 | Apparatus for molecular beam growth |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS649890A true JPS649890A (en) | 1989-01-13 |
Family
ID=15817350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16569887A Pending JPS649890A (en) | 1987-07-01 | 1987-07-01 | Apparatus for molecular beam growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS649890A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02296797A (ja) * | 1989-05-09 | 1990-12-07 | Nec Corp | 選択的ボロンドープ層の形成方法 |
JPH05277557A (ja) * | 1992-03-27 | 1993-10-26 | Nippon Steel Corp | ストリップ搬送装置 |
-
1987
- 1987-07-01 JP JP16569887A patent/JPS649890A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02296797A (ja) * | 1989-05-09 | 1990-12-07 | Nec Corp | 選択的ボロンドープ層の形成方法 |
JPH05277557A (ja) * | 1992-03-27 | 1993-10-26 | Nippon Steel Corp | ストリップ搬送装置 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6417870A (en) | Manufacture of carbon | |
JPS5766625A (en) | Manufacture of film | |
US4974544A (en) | Vapor deposition apparatus | |
JPS64272A (en) | Microwave plasma cvd device | |
JPS649890A (en) | Apparatus for molecular beam growth | |
JPS61238962A (ja) | 膜形成装置 | |
JPS5927212B2 (ja) | プラズマ反応装置 | |
JPS56138921A (en) | Method of formation for impurity introduction layer | |
JP4510186B2 (ja) | カーボン薄膜製造方法 | |
JPS57161057A (en) | Chemical vapor phase growth device using plasma | |
JPH04180566A (ja) | 薄膜形成装置 | |
JPS6267822A (ja) | プラズマ処理装置 | |
JPH01234397A (ja) | ダイヤモンド状薄膜の製造方法及び装置 | |
JPS6417869A (en) | Microwave plasma chemical vapor deposition device | |
JPS56121629A (en) | Film forming method | |
JPS63155546A (ja) | イオンドーピング装置 | |
JPS59205470A (ja) | 硬質被膜の形成装置及びその形成方法 | |
JP2646582B2 (ja) | プラズマcvd装置 | |
JPS6447028A (en) | Plasma device | |
JPS5689835A (en) | Vapor phase growth apparatus | |
JPS647623A (en) | Cleaning method for si surface by dry type | |
JPS5615838A (en) | Gaseous phase growth device | |
JPH0361371A (ja) | 薄膜形成装置 | |
JPS6446936A (en) | Growth method of thin film | |
JPS5518077A (en) | Device for growing film under gas |