JPS6489564A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6489564A
JPS6489564A JP62248311A JP24831187A JPS6489564A JP S6489564 A JPS6489564 A JP S6489564A JP 62248311 A JP62248311 A JP 62248311A JP 24831187 A JP24831187 A JP 24831187A JP S6489564 A JPS6489564 A JP S6489564A
Authority
JP
Japan
Prior art keywords
region
resistance
drain
current
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62248311A
Other languages
English (en)
Other versions
JPH0680832B2 (ja
Inventor
Kenji Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62248311A priority Critical patent/JPH0680832B2/ja
Priority to EP19910119868 priority patent/EP0478004A3/en
Priority to DE8888116192T priority patent/DE3876359T2/de
Priority to EP88116192A priority patent/EP0310112B1/en
Publication of JPS6489564A publication Critical patent/JPS6489564A/ja
Priority to US07/611,453 priority patent/US5060032A/en
Publication of JPH0680832B2 publication Critical patent/JPH0680832B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
JP62248311A 1987-09-30 1987-09-30 半導体装置 Expired - Lifetime JPH0680832B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62248311A JPH0680832B2 (ja) 1987-09-30 1987-09-30 半導体装置
EP19910119868 EP0478004A3 (en) 1987-09-30 1988-09-30 Insulated gate transistor operable at a low drain-source voltage
DE8888116192T DE3876359T2 (de) 1987-09-30 1988-09-30 Isolierter gate-transistor, verwendbar bei niedriger drain-source-spannung.
EP88116192A EP0310112B1 (en) 1987-09-30 1988-09-30 Insulated gate transistor operable at a low drain-source voltage
US07/611,453 US5060032A (en) 1987-09-30 1990-11-13 Insulated gate transistor operable at a low-drain-source voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62248311A JPH0680832B2 (ja) 1987-09-30 1987-09-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS6489564A true JPS6489564A (en) 1989-04-04
JPH0680832B2 JPH0680832B2 (ja) 1994-10-12

Family

ID=17176187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62248311A Expired - Lifetime JPH0680832B2 (ja) 1987-09-30 1987-09-30 半導体装置

Country Status (4)

Country Link
US (1) US5060032A (ja)
EP (2) EP0310112B1 (ja)
JP (1) JPH0680832B2 (ja)
DE (1) DE3876359T2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005333055A (ja) * 2004-05-21 2005-12-02 Toyota Central Res & Dev Lab Inc 半導体装置
JP2006332199A (ja) * 2005-05-24 2006-12-07 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置
JP2009010414A (ja) * 2008-08-26 2009-01-15 Mitsubishi Electric Corp 電力用半導体装置
JP2012186353A (ja) * 2011-03-07 2012-09-27 Fuji Electric Co Ltd 複合半導体装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680832B2 (ja) 1987-09-30 1994-10-12 日本電気株式会社 半導体装置
US5198688A (en) * 1989-03-06 1993-03-30 Fuji Electric Co., Ltd. Semiconductor device provided with a conductivity modulation MISFET
JP3182262B2 (ja) * 1993-07-12 2001-07-03 株式会社東芝 半導体装置
DE4335298C1 (de) * 1993-10-15 1995-03-23 Siemens Ag Schaltungsstruktur mit mindestens einem bipolaren Leistungsbauelement und Verfahren zu deren Betrieb
US5665988A (en) * 1995-02-09 1997-09-09 Fuji Electric Co., Ltd. Conductivity-modulation semiconductor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864059A (ja) * 1981-10-14 1983-04-16 Hitachi Ltd 高耐圧抵抗素子
EP0118007B1 (en) * 1983-02-04 1990-05-23 General Electric Company Electrical circuit comprising a hybrid power switching semiconductor device including an scr structure
JPS605568A (ja) * 1983-06-23 1985-01-12 Sanken Electric Co Ltd 縦型絶縁ゲ−ト電界効果トランジスタ
JPS6017026A (ja) * 1983-07-08 1985-01-28 Nishimura Watanabe Chiyuushiyutsu Kenkyusho:Kk 金属チタンの製造方法
JPS60170263A (ja) 1984-02-15 1985-09-03 Nec Corp 縦型電界効果トランジスタ
DE3628857A1 (de) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp Halbleitereinrichtung
CA1252225A (en) * 1985-11-27 1989-04-04 Sel Colak Lateral insulated gate transistors with coupled anode and gate regions
JPH0680832B2 (ja) 1987-09-30 1994-10-12 日本電気株式会社 半導体装置
US4901127A (en) * 1988-10-07 1990-02-13 General Electric Company Circuit including a combined insulated gate bipolar transistor/MOSFET

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005333055A (ja) * 2004-05-21 2005-12-02 Toyota Central Res & Dev Lab Inc 半導体装置
JP2006332199A (ja) * 2005-05-24 2006-12-07 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置
JP2009010414A (ja) * 2008-08-26 2009-01-15 Mitsubishi Electric Corp 電力用半導体装置
JP2012186353A (ja) * 2011-03-07 2012-09-27 Fuji Electric Co Ltd 複合半導体装置

Also Published As

Publication number Publication date
EP0310112A2 (en) 1989-04-05
DE3876359D1 (de) 1993-01-14
EP0478004A2 (en) 1992-04-01
EP0310112A3 (en) 1989-05-24
JPH0680832B2 (ja) 1994-10-12
US5060032A (en) 1991-10-22
EP0310112B1 (en) 1992-12-02
DE3876359T2 (de) 1993-04-01
EP0478004A3 (en) 1992-05-06

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