JPS6480060A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6480060A JPS6480060A JP62235911A JP23591187A JPS6480060A JP S6480060 A JPS6480060 A JP S6480060A JP 62235911 A JP62235911 A JP 62235911A JP 23591187 A JP23591187 A JP 23591187A JP S6480060 A JPS6480060 A JP S6480060A
- Authority
- JP
- Japan
- Prior art keywords
- film
- nitride film
- dielectric
- electrode layer
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62235911A JPS6480060A (en) | 1987-09-19 | 1987-09-19 | Semiconductor integrated circuit device |
KR1019880011906A KR100212098B1 (ko) | 1987-09-19 | 1988-09-15 | 반도체 집적회로 장치 및 그 제조 방법과 반도체 집적 회로 장치의 배선기판 및 그 제조 방법 |
US07/246,514 US5153685A (en) | 1987-09-19 | 1988-09-19 | Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring |
US08/254,562 US5504029A (en) | 1987-09-19 | 1994-06-06 | Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs |
US08/620,867 US5753550A (en) | 1987-09-19 | 1996-03-25 | Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring |
US08/674,185 US5734188A (en) | 1987-09-19 | 1996-07-01 | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same |
KR1019970040515A KR0150941B1 (ko) | 1987-09-19 | 1997-08-25 | 반도체 집적회로장치 및 그 제조방법과 반도체 집적회로장치의 배선기판 및 그 제조방법 |
US09/013,605 US5930624A (en) | 1987-09-19 | 1998-01-26 | Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring |
US09/317,999 US6281071B1 (en) | 1987-09-19 | 1999-05-25 | Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiring |
US09/915,590 US20020028574A1 (en) | 1987-09-19 | 2001-07-27 | Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring |
US09/998,654 US6737318B2 (en) | 1987-09-19 | 2001-12-03 | Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring |
US10/774,524 US20040155289A1 (en) | 1987-09-19 | 2004-02-10 | Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62235911A JPS6480060A (en) | 1987-09-19 | 1987-09-19 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6480060A true JPS6480060A (en) | 1989-03-24 |
Family
ID=16993063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62235911A Pending JPS6480060A (en) | 1987-09-19 | 1987-09-19 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6480060A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5065215A (en) * | 1989-06-28 | 1991-11-12 | Nec Corporation | Semiconductor memory cell and method of manufacturing the same |
JPH03262150A (ja) * | 1990-03-13 | 1991-11-21 | Matsushita Electron Corp | 半導体容量装置 |
JPH04243157A (ja) * | 1991-01-18 | 1992-08-31 | Nec Corp | 半導体集積回路装置 |
US5237187A (en) * | 1990-11-30 | 1993-08-17 | Hitachi, Ltd. | Semiconductor memory circuit device and method for fabricating same |
US5276344A (en) * | 1990-04-27 | 1994-01-04 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having impurity regions of different depths and manufacturing method thereof |
US5283204A (en) * | 1992-04-15 | 1994-02-01 | Micron Semiconductor, Inc. | Method of forming passivation oxidation for improving cell leakage and cell area |
-
1987
- 1987-09-19 JP JP62235911A patent/JPS6480060A/ja active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5065215A (en) * | 1989-06-28 | 1991-11-12 | Nec Corporation | Semiconductor memory cell and method of manufacturing the same |
JPH03262150A (ja) * | 1990-03-13 | 1991-11-21 | Matsushita Electron Corp | 半導体容量装置 |
US5276344A (en) * | 1990-04-27 | 1994-01-04 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having impurity regions of different depths and manufacturing method thereof |
US5489791A (en) * | 1990-04-27 | 1996-02-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having impurity regions of different depths and manufacturing method thereof |
US5672533A (en) * | 1990-04-27 | 1997-09-30 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having impurity regions of different depths and manufacturing method thereof |
US5237187A (en) * | 1990-11-30 | 1993-08-17 | Hitachi, Ltd. | Semiconductor memory circuit device and method for fabricating same |
US5389558A (en) * | 1990-11-30 | 1995-02-14 | Hitachi, Ltd. | Method of making a semiconductor memory circuit device |
US6043118A (en) * | 1990-11-30 | 2000-03-28 | Hitachi, Ltd. | Semiconductor memory circuit device and method for fabricating a semiconductor memory device circuit |
JPH04243157A (ja) * | 1991-01-18 | 1992-08-31 | Nec Corp | 半導体集積回路装置 |
US5283204A (en) * | 1992-04-15 | 1994-02-01 | Micron Semiconductor, Inc. | Method of forming passivation oxidation for improving cell leakage and cell area |
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