JPS6476719A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6476719A JPS6476719A JP23232087A JP23232087A JPS6476719A JP S6476719 A JPS6476719 A JP S6476719A JP 23232087 A JP23232087 A JP 23232087A JP 23232087 A JP23232087 A JP 23232087A JP S6476719 A JPS6476719 A JP S6476719A
- Authority
- JP
- Japan
- Prior art keywords
- film
- baked
- buried
- contact hole
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To flatten the surface of a buried polycrystalline silicon film by coating the film formed with an insulating film opened with a contact hole with a material having the same etching ratio as that of the film on the film, flattening the film, etching back it, and retaining the silicon in the hole. CONSTITUTION:After phosphorus of N-type impurity is diffused by a thermally diffusing method in a grown polycrystalline silicon film, the whole surface of the film 6 is coated by a spin ON method with a silica glass film 5 containing phosphorus, and flattened. Thereafter, it is baked in a nitrogen atmosphere, an organic solvent is scattered, and the film 6 is baked and solidified. Then, the films 6, 5 are etched back until an interlayer silicon oxide film 3 of a lower layer is exposed. As a result, the film 5 in a contact hole 4 is buried in the flattened state.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23232087A JPS6476719A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23232087A JPS6476719A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6476719A true JPS6476719A (en) | 1989-03-22 |
Family
ID=16937353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23232087A Pending JPS6476719A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6476719A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04208529A (en) * | 1990-01-12 | 1992-07-30 | Nec Corp | Manufacture of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227118A (en) * | 1983-06-08 | 1984-12-20 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS60140818A (en) * | 1983-12-28 | 1985-07-25 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-09-18 JP JP23232087A patent/JPS6476719A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227118A (en) * | 1983-06-08 | 1984-12-20 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS60140818A (en) * | 1983-12-28 | 1985-07-25 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04208529A (en) * | 1990-01-12 | 1992-07-30 | Nec Corp | Manufacture of semiconductor device |
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