JPS64739A - Thermal oxidizing device for semiconductor substrate - Google Patents

Thermal oxidizing device for semiconductor substrate

Info

Publication number
JPS64739A
JPS64739A JP15569487A JP15569487A JPS64739A JP S64739 A JPS64739 A JP S64739A JP 15569487 A JP15569487 A JP 15569487A JP 15569487 A JP15569487 A JP 15569487A JP S64739 A JPS64739 A JP S64739A
Authority
JP
Japan
Prior art keywords
horizontal surface
core tube
semiconductor substrate
oxidation
angles except
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15569487A
Other languages
Japanese (ja)
Other versions
JPH01739A (en
Inventor
Mikio Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP15569487A priority Critical patent/JPS64739A/en
Publication of JPH01739A publication Critical patent/JPH01739A/en
Publication of JPS64739A publication Critical patent/JPS64739A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enable thermal oxidation only by using space having the excellent uniformity of a temperature and reaction-gas partial pressure by forming slits having angles except 90° to a horizontal surface to a boat and fixing a semiconductor substrate at angles except 90° to the horizontal surface.
CONSTITUTION: Semiconductor substrates 104 are fastened at angles except perpendicularity to a horizontal surface by inserting the substrates into obliquely shaped slits, and oxide films are formed onto the surfaces through the same method as conventional one. Height in the vertical direction in a core tube is shortened, oxidation is not performed in upper and lower sections in the core tube and oxidation can be executed only by employing space at a central section by askew fixing the semiconductor substrates 104 to the horizontal surface and the core tube 102.
COPYRIGHT: (C)1989,JPO&Japio
JP15569487A 1987-06-23 1987-06-23 Thermal oxidizing device for semiconductor substrate Pending JPS64739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15569487A JPS64739A (en) 1987-06-23 1987-06-23 Thermal oxidizing device for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15569487A JPS64739A (en) 1987-06-23 1987-06-23 Thermal oxidizing device for semiconductor substrate

Publications (2)

Publication Number Publication Date
JPH01739A JPH01739A (en) 1989-01-05
JPS64739A true JPS64739A (en) 1989-01-05

Family

ID=15611495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15569487A Pending JPS64739A (en) 1987-06-23 1987-06-23 Thermal oxidizing device for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS64739A (en)

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