JPS5490970A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5490970A
JPS5490970A JP15760077A JP15760077A JPS5490970A JP S5490970 A JPS5490970 A JP S5490970A JP 15760077 A JP15760077 A JP 15760077A JP 15760077 A JP15760077 A JP 15760077A JP S5490970 A JPS5490970 A JP S5490970A
Authority
JP
Japan
Prior art keywords
pattern
film
sio
carbonization
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15760077A
Other languages
Japanese (ja)
Other versions
JPS6142853B2 (en
Inventor
Kazuya Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15760077A priority Critical patent/JPS5490970A/en
Publication of JPS5490970A publication Critical patent/JPS5490970A/en
Publication of JPS6142853B2 publication Critical patent/JPS6142853B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To establish fine pattern with good yield rate even to thick insulation film, by providing the pattern of organic compound such as photo resist film on the semiconductor substrate and removing the pattern after coating the insulation film on it.
CONSTITUTION: The photo resist pattern 12 is placed on the semiconductor substrate 11, heat treatment of 180 to 400°C is made in inactive gas, and hardening is made with carbonization. Next, thich SiO2 film 13 is grown on the entire surface of the substrate 11 including the pattern 12 with CVD method, and the thickness of the film 13 grown at the upper and side surface of the pattern 12 is very thin with the progress of carbonization since the O2 enters in the pattern 12 at the reaction of SiH4 +O2 → SiO2 +2H2. Then, since pin holes are caused much, the removal of the pattern 12 is made easy by either of heated sulphuric acid or O2 plasma. establishing the fine pattern of desired SiO2 film 13. Thus, the diffusion region 16 and so on are formed.
COPYRIGHT: (C)1979,JPO&Japio
JP15760077A 1977-12-28 1977-12-28 Manufacture for semiconductor device Granted JPS5490970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15760077A JPS5490970A (en) 1977-12-28 1977-12-28 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15760077A JPS5490970A (en) 1977-12-28 1977-12-28 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5490970A true JPS5490970A (en) 1979-07-19
JPS6142853B2 JPS6142853B2 (en) 1986-09-24

Family

ID=15653250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15760077A Granted JPS5490970A (en) 1977-12-28 1977-12-28 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5490970A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02164055A (en) * 1988-12-19 1990-06-25 Nec Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929016A (en) * 1972-07-11 1974-03-15
JPS5020271A (en) * 1973-06-25 1975-03-04

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929016A (en) * 1972-07-11 1974-03-15
JPS5020271A (en) * 1973-06-25 1975-03-04

Also Published As

Publication number Publication date
JPS6142853B2 (en) 1986-09-24

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