JPH01739A - Thermal oxidation equipment for semiconductor substrates - Google Patents
Thermal oxidation equipment for semiconductor substratesInfo
- Publication number
- JPH01739A JPH01739A JP62-155694A JP15569487A JPH01739A JP H01739 A JPH01739 A JP H01739A JP 15569487 A JP15569487 A JP 15569487A JP H01739 A JPH01739 A JP H01739A
- Authority
- JP
- Japan
- Prior art keywords
- thermal oxidation
- semiconductor substrate
- semiconductor substrates
- core tube
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 title claims description 29
- 230000003647 oxidation Effects 0.000 title claims description 18
- 238000007254 oxidation reaction Methods 0.000 title claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000003779 heat-resistant material Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 12
- 239000000376 reactant Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体の製造装置、特に半導体基板の熱酸化
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus, and particularly to a thermal oxidation apparatus for semiconductor substrates.
半導体基板の熱酸化装置はM OS F E Tのゲー
ト絶縁膜等の形成に用いられる装置であり、一般に第2
図(a)〜(b)に示すような構成になっている。A thermal oxidation device for semiconductor substrates is a device used for forming gate insulating films, etc. of MOS FETs, and is generally used for the second
The configuration is as shown in FIGS. (a) to (b).
この第2図(a)に示す熱酸化袋ぎにより酸化膜の成長
を行うには、まずヒーター201により一定温度に加熱
された炉心管202内に、半導体基板204を所定間隔
で垂直に立てたボー)203を設置し、ガス注入口より
0.あるいはH,。To grow an oxide film using the thermal oxidation bag shown in FIG. 2(a), semiconductor substrates 204 are first placed vertically at predetermined intervals in a furnace tube 202 heated to a constant temperature by a heater 201. 203 and inject 0.0 from the gas inlet. Or H.
等の反応ガス206を注入し、温度や圧力を調整しつつ
一定時間放置することにより、半導体基板表面に酸化膜
を形成する。An oxide film is formed on the surface of the semiconductor substrate by injecting a reaction gas 206 such as the above, and leaving it for a certain period of time while adjusting the temperature and pressure.
反応終了後は炉心管内の反応ガスをN1等の不活性ガス
で置換した後、ヒーターを停止し冷却する。After the reaction is completed, the reaction gas in the reactor core tube is replaced with an inert gas such as N1, and then the heater is stopped and the reactor is cooled.
ボー)203上には第2図(b)に示すように水平面に
対して垂直なスリットが設けられ、 半導体基板204
を水平面に対して垂直に固定できる。As shown in FIG. 2(b), a slit perpendicular to the horizontal plane is provided on the semiconductor substrate 203.
can be fixed perpendicular to the horizontal plane.
しかし前述の従来の技術は炉心管内の垂直方向の温度分
布を一定に保つのは困難であり、上部の温度か高くなり
がちである。また反応終了時のNj′等の不活性ガスと
反応ガスの置換時に、ガスの比重の差から均一に置換す
ることは困難であり、−時的に炉心管内上部にて反応ガ
スの分圧が高くなりがちである。半導体基板の熱酸化工
程では酸化温度の高いほど、また反応ガス分圧の高いほ
ど酸化速度は増加するため、結果として、半導体基板表
面に形成される酸化膜膜厚の面内均一性が悪化するとい
う問題点を仔する。However, with the above-mentioned conventional technology, it is difficult to maintain a constant vertical temperature distribution within the reactor core tube, and the temperature in the upper part tends to be high. Furthermore, when replacing the reactant gas with an inert gas such as Nj' at the end of the reaction, it is difficult to replace the reactant gas uniformly due to the difference in specific gravity of the gas, and the partial pressure of the reactant gas at the upper part of the reactor tube sometimes increases. It tends to be expensive. In the thermal oxidation process of semiconductor substrates, the higher the oxidation temperature and the higher the partial pressure of the reactant gas, the higher the oxidation rate, and as a result, the in-plane uniformity of the oxide film formed on the surface of the semiconductor substrate deteriorates. Let's take a look at the problem.
本発明は、このような従来の半導体基板の熱酸化工程に
おける問題点を解決するもので、その目的とするところ
は半導体基板表面に、より均一な酸化膜を形成する巳と
を可能とする半導体基板の熱酸化装置を提供するところ
にある。The present invention solves these problems in the conventional thermal oxidation process of semiconductor substrates, and its purpose is to form a more uniform oxide film on the surface of a semiconductor substrate. The present invention provides a thermal oxidation device for a substrate.
本発明による半導体基板の熱酸化装置は、 耐熱材料よ
りなる炉心管、 炉心管を加熱するヒーター、炉心管内
において半導体基板を固定する機能を仔するボート等に
より形成される半導体基板の熱酸化装置において、 前
記ボートに水平面に対し90度以外の角度ををするスリ
ット(切り欠き)か設けられ、半導体基板を水平面に対
し00度以外の角度で固定する機能を有することを特徴
とする。The thermal oxidation device for semiconductor substrates according to the present invention includes a furnace tube made of a heat-resistant material, a heater for heating the furnace tube, a boat having a function of fixing the semiconductor substrate in the furnace tube, etc. , the boat is provided with a slit (notch) making an angle other than 90 degrees with respect to the horizontal plane, and has a function of fixing the semiconductor substrate at an angle other than 00 degrees with respect to the horizontal plane.
第1図(a)〜(b)は本発明による半導体基板の熱酸
化装置を示す図であり、ボートに斜めにスリットを形成
することにより半導体基板を水平面に対して90度以外
の角度で固定する機能を付与した例を示す。第1図(a
)は全体を示す図であり、第1図(b)はボートの拡大
図である。FIGS. 1(a) and 1(b) are diagrams showing a thermal oxidation apparatus for semiconductor substrates according to the present invention, in which the semiconductor substrate is fixed at an angle other than 90 degrees with respect to the horizontal plane by forming diagonal slits in the boat. Here is an example with the function added. Figure 1 (a
) is a view showing the whole boat, and FIG. 1(b) is an enlarged view of the boat.
(a)に示すように基本的なt+W成要索は従来のもの
と同一であり、(b)に示すボート上のスリットの角度
のみが異っている。半導体基板を斜めに形成されたスリ
ットに差しこむ事により水平面に対して垂直以外の角度
で固定し、以下従来と同一の方法で表面に酸化膜を形成
する。半導体基板を水平面及び炉心管に対して斜めに固
定することにより、炉心管内における垂直方向の高さを
縮小させ炉心管内の上下の部分で酸化を行なわず、(横
方向から見て)中央部の室間のみを用いて酸化を行う事
が可能となる。As shown in (a), the basic t+W component line is the same as the conventional one, and the only difference is the angle of the slit on the boat as shown in (b). A semiconductor substrate is inserted into an obliquely formed slit to be fixed at an angle other than perpendicular to a horizontal plane, and an oxide film is then formed on the surface using the same method as in the conventional method. By fixing the semiconductor substrate diagonally to the horizontal plane and the reactor core tube, the vertical height within the reactor core tube is reduced, and oxidation is not performed in the upper and lower parts of the reactor core tube, and the central part (as viewed from the side) is reduced. It becomes possible to carry out oxidation using only the room.
なお第1図ではウェハーの下端がガス注入口に近づくよ
うに傾けたが、逆に上端がガス注入口に近づくように傾
けても同様の効果が得られる。In FIG. 1, the wafer is tilted so that the lower end approaches the gas injection port, but the same effect can be obtained even if the wafer is tilted so that the upper end approaches the gas injection port.
以上述べたように本発明によれば、半導体基板を炉心管
内において(横方向から見て)斜めに設置することによ
り、炉心管内の上下の空間を用いずに熱酸化膜を形成す
ることができる。〔発明が解決しようとする問題点〕で
述べたように炉心管内部は上下方向における温度及び反
応ガス分圧のバラツキが大きく、そのため熱酸化膜膜厚
の面内均一性が悪化するが、本発明による半導体基板の
熱酸化装置を用いれば、半導体基板を従来の装置より温
度及び反応ガス分圧の均一性の卓れた空間のみを用いて
熱酸化を行うことにより、酸化膜膜厚の面内均一性を向
上させることができる。その結果、同−半4体基板から
より均一な品質の半導体装置をより高歩留りで生成する
ことが可能となる。As described above, according to the present invention, by installing the semiconductor substrate diagonally within the reactor core tube (as viewed from the lateral direction), it is possible to form a thermal oxide film without using the vertical space within the reactor core tube. . As stated in [Problems to be Solved by the Invention], there are large variations in temperature and reactant gas partial pressure in the vertical direction inside the reactor tube, which deteriorates the in-plane uniformity of the thermal oxide film thickness. By using the thermal oxidation device for semiconductor substrates according to the invention, the semiconductor substrate can be thermally oxidized using only a space where the temperature and partial pressure of the reactant gas are more uniform than in conventional devices, thereby improving the oxide film thickness. Internal uniformity can be improved. As a result, it becomes possible to produce semiconductor devices of more uniform quality at a higher yield from the same half-quad substrate.
第1図(a)、(b)は、本発明の実施例による半導体
基板の熱酸化装置を示す図である。
第2図(a)、(b)は、従来の半導体基板の熱酸化装
置を示す図である。
101.201・・・ヒーター
102.202・・・炉心管
103.203・・・ボート
104.204・・・半導体基板
105.205・・・ガス注入口
106.206・・・反応ガス
107 、 ?07 ・・・ ス リ ッ
ト以 上
出願人 セイコーエプソン株式会社
代理人 弁理士 最 上 務 他1名 へ、設”−・
11
(す
(bン
蓮 l 田
2°b 、 2o7とり)
第 λ lFIGS. 1(a) and 1(b) are diagrams showing a thermal oxidation apparatus for semiconductor substrates according to an embodiment of the present invention. FIGS. 2(a) and 2(b) are diagrams showing a conventional thermal oxidation apparatus for semiconductor substrates. 101.201...Heater 102.202...Furnace tube 103.203...Boat 104.204...Semiconductor substrate 105.205...Gas inlet 106.206...Reactant gas 107, ? 07... Slippery
To the above applicants: Seiko Epson Co., Ltd. agent, patent attorney Tsutomu Mogami, and one other person.
11 (su(bunren l 田2°b, 2o7tori) th λ l
Claims (1)
、炉心管内において半導体基板を固定する機能を有する
ボート等により形成される半導体基板の酸化装置におい
て、前記ボートに水平面に対し90度以外の角度を有す
るスリットが設けられ、半導体基板を水平面に対し90
度以外の角度で固定する機能を有することを特徴とする
半導体基板の熱酸化装置。In a semiconductor substrate oxidation device formed by a core tube made of a heat-resistant material, a heater for heating the core tube, a boat having a function of fixing a semiconductor substrate in the core tube, etc., the boat is provided at an angle other than 90 degrees with respect to a horizontal plane. A slit is provided, and the semiconductor substrate is separated from the horizontal plane by 90°.
A thermal oxidation device for a semiconductor substrate, characterized by having a function of fixing at an angle other than degrees.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-155694A JPH01739A (en) | 1987-06-23 | Thermal oxidation equipment for semiconductor substrates |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-155694A JPH01739A (en) | 1987-06-23 | Thermal oxidation equipment for semiconductor substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS64739A JPS64739A (en) | 1989-01-05 |
JPH01739A true JPH01739A (en) | 1989-01-05 |
Family
ID=
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