JPH0622982Y2 - Wafer boat for low pressure CVD - Google Patents
Wafer boat for low pressure CVDInfo
- Publication number
- JPH0622982Y2 JPH0622982Y2 JP461389U JP461389U JPH0622982Y2 JP H0622982 Y2 JPH0622982 Y2 JP H0622982Y2 JP 461389 U JP461389 U JP 461389U JP 461389 U JP461389 U JP 461389U JP H0622982 Y2 JPH0622982 Y2 JP H0622982Y2
- Authority
- JP
- Japan
- Prior art keywords
- pressure cvd
- alloy
- low pressure
- boat
- wafer boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【考案の詳細な説明】 (イ)産業上の利用分野 本考案は半導体装置に用いられる減圧ＣＶＤ装置用ウエ
ハボートの改良に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to improvement of a wafer boat for a low pressure CVD apparatus used for a semiconductor device.
(ロ)従来の技術 半導体素子製造プロセスにおいてSiO2,PSG等の膜をウエ
ハ上に生成するために減圧ＣＶＤ装置が使用されている
ことはよく知られている。ところで従来減圧ＣＶＤ装置
としは例えば特開昭６３−６２２２６号公報に記載され
ているものが知られている。その装置は、ウエハをポー
トの上に複数枚垂直に並べられたものが石英製反応管３
の内部に配置され、抵抗加熱炉でウエハを３００℃〜９
００℃程度の所定の温度に加熱する。石英反応管の内部
を排気ポンプによって減圧状態にした後反応ガスを管内
に導入すれば、化学反応によってウエハの表面にＣＶＤ
膜が生成されることもよく知られている。(B) Conventional Technology It is well known that a low pressure CVD apparatus is used to form a film of SiO 2 , PSG or the like on a wafer in a semiconductor device manufacturing process. By the way, as a conventional low pressure CVD apparatus, for example, the one described in JP-A-63-62226 is known. The apparatus is a quartz reaction tube 3 in which a plurality of wafers are vertically arranged on a port.
The wafer is placed inside the chamber and the wafer is heated at 300 ° C to 9 ° C in a resistance heating furnace.
It is heated to a predetermined temperature of about 00 ° C. If the inside of the quartz reaction tube is decompressed by an exhaust pump and a reaction gas is introduced into the tube, a chemical reaction causes CVD on the surface of the wafer.
It is also well known that films are produced.
ボートの材質としては石英等が選択される他、反応ガス
の流路を自由に加工できる等の理由からステンレス鋼
（SUS-304）が用いられていた。Quartz or the like is selected as the material of the boat, and stainless steel (SUS-304) has been used because the flow path of the reaction gas can be freely processed.
(ハ)考案が解決しようとする課題 しかしながら、ステンレス鋼はシリコン酸化膜（SiO2）
に比べて熱膨張係数が１桁以上高いので、ボートに付着
したシリコン酸化膜（SiO2）がＣＶＤの処理温度で砕け
て飛散し、飛散したフレークがウエハに付着してピンホ
ールを発生させる欠点があった。(C) Problems to be solved by the invention However, stainless steel has a silicon oxide film (SiO 2 )
The thermal expansion coefficient is more than one digit higher than that of, so the silicon oxide film (SiO 2 ) adhering to the boat is crushed and scattered at the CVD processing temperature, and the scattered flakes adhere to the wafer and form pinholes. was there.
(ニ)課題が解決するための手段 本考案は上記欠点に鑑み成されたのもで、ボートの材質
として４２アロイ合金を利用することにより、フレーク
の飛散を抑制し得る減圧ＣＶＤ用ウエハボートを提供す
るものである。(D) Means for Solving the Problems The present invention has been made in view of the above-mentioned drawbacks. Therefore, by using 42 alloy alloy as the material of the boat, a low pressure CVD wafer boat capable of suppressing the scattering of flakes is provided. It is a thing.
(ホ)作用 本考案によれば、４２アロイはステンレス鋼より熱膨張
係数が低く、よりシリコン酸化膜（SiO2）に近い値を持
つので、熱膨張係数の差によるフレーク数の数を減少で
きる。(E) Action According to the present invention, 42 alloy has a lower coefficient of thermal expansion than stainless steel and has a value closer to that of a silicon oxide film (SiO 2 ), so the number of flakes due to the difference in coefficient of thermal expansion can be reduced. .
(ヘ)実施例 以下に本考案を図面を参照しながら詳細に説明する。第
１図と第２図は夫々本考案のウエハボートを示す断面図
及び側面図である。同図において、(1)は内側に多数板
のウエハーをセットする為の図示せぬ溝が切られ、ウエ
ハー形状に対応して円筒形状の下側半分を成す肉厚ｔ＝
１〜２mmのカセット、(2)(3)は前記円筒形状の上側半分
を成し前記カセット(1)とで内径１００〜１５０mmのボ
ートを形成するボートカバー、(4)は前記円筒形状の側
面をカバーする側板、(5)はカセット(1)を一定のウエハ
ー毎に区切る中部仕切板、(6)は側板(4)に溶接取付られ
ボートの高さを調整する為のボート高さ調整金具、(7)
はボートカバー(2)(3)を固定するフックピン、(8)はボ
ートカバー(2)に開けられたガス気孔で、所望のピッチ
で複数個設けられている。(F) Embodiment Hereinafter, the present invention will be described in detail with reference to the drawings. 1 and 2 are a sectional view and a side view, respectively, showing a wafer boat of the present invention. In the figure, (1) is a groove (not shown) for setting a large number of wafers inside, and has a wall thickness t = which forms the lower half of the cylindrical shape corresponding to the wafer shape.
1 to 2 mm cassette, (2) and (3) are boat covers that form the upper half of the cylindrical shape and form a boat having an inner diameter of 100 to 150 mm with the cassette (1), and (4) is the side surface of the cylindrical shape. Side plate that covers the, (5) middle partition plate that divides the cassette (1) into fixed wafers, and (6) is welded to the side plate (4) and is a boat height adjustment fitting for adjusting the height of the boat , (7)
Is a hook pin for fixing the boat covers (2) and (3), and (8) is a gas hole formed in the boat cover (2), and a plurality of gas holes are provided at a desired pitch.
そして、上記カセット(1)及びボートカバー(2)(3)は全
て４２アロイ合金（Ni：Fe＝40：60）から成る合金板を
加工して作られる。シリコン酸化膜とステンレス鋼、及
び４２アロイ合金の夫々の熱膨張係数は以下の通りであ
る。The cassette (1) and the boat covers (2) and (3) are all made by processing an alloy plate made of 42 alloy alloy (Ni: Fe = 40: 60). The thermal expansion coefficients of the silicon oxide film, stainless steel, and 42 alloy are as follows.
シリコン酸化膜……0.6×10-6cm／cm℃ ステンレス鋼（SUS304）…16.4×10-6cm／cm℃ ４２アロイ合金……7.0×10-6cm／cm℃ 即ち、４２アロイ合金は従来のステンレス鋼に比して熱
膨張係数が小さく、シリコン酸化膜のものに近似する。
従って、カセット(1)又はボートカバー(2)の内面に付着
したシリコン酸化膜が両者の熱膨張係数の差異により砕
けて飛散することにより生ずるフレーク数を従来のステ
ンレス鋼に比べて半減できる。しかも、材料の加工性や
価格の点から考慮しても何ら遜色無い。Silicon oxide film …… 0.6 × 10 -6 cm / cm ℃ Stainless steel (SUS304)… 16.4 × 10 -6 cm / cm ℃ 42 alloy alloy …… 7.0 × 10 -6 cm / cm ℃ That is, the 42 alloy alloy is conventional The coefficient of thermal expansion is smaller than that of stainless steel, and is close to that of a silicon oxide film.
Therefore, the number of flakes generated when the silicon oxide film attached to the inner surface of the cassette (1) or the boat cover (2) is crushed and scattered due to the difference in thermal expansion coefficient between the two can be halved compared to the conventional stainless steel. Moreover, it is no different from the viewpoint of material workability and price.
(ト)考案の効果 以上説明したように、本考案によれば材料として４２ア
ロイ合金を用いることによりフレーク数を半減できる減
圧ＣＶＤ用ウエハボートを提供でき、従って欠陥の無い
半導体装置の製造が行える利点を有する。また、材料の
加工性や価格の点からも、従来と遜色が無い利点をも有
する。(G) Effect of the Invention As described above, according to the present invention, it is possible to provide a low pressure CVD wafer boat capable of reducing the number of flakes by half by using a 42 alloy alloy as a material, and thus a semiconductor device without defects can be manufactured. Have advantages. In addition, it has an advantage that it is comparable to the conventional one in terms of workability and price of the material.
第１図及び第２図は夫々本考案を説明する為の断面図及
び平面図である。1 and 2 are a sectional view and a plan view, respectively, for explaining the present invention.
Claims (2)
の合金材料から成ることを特徴とする減圧ＣＶＤ用ウエ
ハボート。1. A coefficient of thermal expansion of 1.0 to 10.0 cm / cm ° C.
A wafer boat for low-pressure CVD, which is made of the above alloy material.
を特徴とする請求項第１項に記載の減圧ＣＶＤ用ウエハ
ボート。2. The low pressure CVD wafer boat according to claim 1, wherein the alloy material is a 42 alloy alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP461389U JPH0622982Y2 (en) | 1989-01-19 | 1989-01-19 | Wafer boat for low pressure CVD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP461389U JPH0622982Y2 (en) | 1989-01-19 | 1989-01-19 | Wafer boat for low pressure CVD |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0296728U JPH0296728U (en) | 1990-08-01 |
| JPH0622982Y2 true JPH0622982Y2 (en) | 1994-06-15 |
Family
ID=31207278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP461389U Expired - Lifetime JPH0622982Y2 (en) | 1989-01-19 | 1989-01-19 | Wafer boat for low pressure CVD |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0622982Y2 (en) |
-
1989
- 1989-01-19 JP JP461389U patent/JPH0622982Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0296728U (en) | 1990-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |