JPS60111420A - Heat treatment furnace - Google Patents

Heat treatment furnace

Info

Publication number
JPS60111420A
JPS60111420A JP21995883A JP21995883A JPS60111420A JP S60111420 A JPS60111420 A JP S60111420A JP 21995883 A JP21995883 A JP 21995883A JP 21995883 A JP21995883 A JP 21995883A JP S60111420 A JPS60111420 A JP S60111420A
Authority
JP
Japan
Prior art keywords
core tube
furnace
semiconductor substrate
furnace core
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21995883A
Other languages
Japanese (ja)
Inventor
Kenji Oka
健次 岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP21995883A priority Critical patent/JPS60111420A/en
Publication of JPS60111420A publication Critical patent/JPS60111420A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To equalize the characteristics of a semiconductor device by means of equalizing the temperature of a semiconductor substrate in a furnace while avoiding dispersion of heat treatment by a method wherein a rectangular furnace core tube is provided. CONSTITUTION:A furnace core tube 2 with rectangular section is provided on the central axis of a heating body 1. A boat 3 is fixed in the furnace core tube 2 while multiple semiconductor substrate 4 are horizontally mounted on the boat 3. The boat is shaped and located so that the gap between the semiconductor substrate 4 and the wall surface of the furnace core tube 2 may be equalized. In such a constitution, any introduced gas may be evenly heated while equalizing heat radiation from the wall surface of the furnace core tube 2 to the substrate 4. Resultantly the characteristics of any produced semiconductor element may be equalized.

Description

【発明の詳細な説明】 （発明の技術分針） 本発明は半導体装置の製造装置に関し、特に半導体基板
から半導体装置の完成した半導体ウェハーを製造するた
めに用いられる熱処理炉に関する。DETAILED DESCRIPTION OF THE INVENTION (Technology of the Invention) The present invention relates to an apparatus for manufacturing semiconductor devices, and more particularly to a heat treatment furnace used for manufacturing semiconductor wafers for completed semiconductor devices from semiconductor substrates.

（従来技術） 一般にシリコン半導体装置は、半導体基板に不純物を付
着させる工程、付着させた不純物を半導体基板内部へ拡
散させる工程、半導体基板表面に熱酸化膜を形成させる
工程等において熱処理炉を用いる。ここでは上記の三つ
の工程をまとめ熱処理と呼ぶことにする。(Prior Art) Generally, a silicon semiconductor device uses a heat treatment furnace in the process of attaching impurities to a semiconductor substrate, the process of diffusing the attached impurities into the inside of the semiconductor substrate, the process of forming a thermal oxide film on the surface of the semiconductor substrate, etc. Here, the above three steps will be collectively referred to as heat treatment.

熱処理は上記に述べたどの場合も、温度、雰囲気（ガス
）２時間がその熱処理を決定する重要な因子となりてい
る。このうち雰曲気（ガス）と時間は、近年のエレクト
ロニクスの発達で非常に精密にコントロールできるよう
になったが、温度は前記２つの因子よりもコントロール
性が悪い。これは、ガス流量と時間は卸に量を表わすも
のであるにすぎないが、温度は位置と時間と共に変化す
る分布関数のためである。すなわち、炉内半導体基板の
温度分布を均一に保つことは非常に困難であった。この
理由は炉内での温度分布、炉内開口部からの熱の外部へ
の放射、冷えた半導体基板を入れた後の炉の温度下降、
冷えたガスを注入するための対流等のためである。In all of the above-mentioned cases, temperature and atmosphere (gas) for 2 hours are important factors that determine the heat treatment. Of these, the atmosphere (gas) and time can now be controlled very precisely due to the recent development of electronics, but temperature is less controllable than the above two factors. This is because temperature is a distribution function that varies with position and time, whereas gas flow rate and time only represent quantity. That is, it is extremely difficult to maintain a uniform temperature distribution of the semiconductor substrate in the furnace. The reasons for this are the temperature distribution inside the furnace, the radiation of heat to the outside from the opening in the furnace, the temperature drop in the furnace after the cold semiconductor substrate is placed,
This is due to convection, etc. for injecting cold gas.

（発明の目的） 本発明の目的は炉内にある半導体基板の温度を均一に保
つことにより、熱処理のバラツキを抑え、半導体装置の
特性の均一化を与えることにある。(Objective of the Invention) An object of the present invention is to suppress variations in heat treatment by keeping the temperature of a semiconductor substrate in a furnace uniform, thereby uniformizing the characteristics of a semiconductor device.

（発明の構成） 本発明は、温度差をなくすため炉心管壁面と半導体基板
の距離を一定にすることを特徴とする。(Structure of the Invention) The present invention is characterized in that the distance between the wall surface of the reactor tube and the semiconductor substrate is kept constant in order to eliminate temperature differences.

距離を一定にすることにより外部から注入されたガスを
均一にあたためることができる。また壁面からの距離が
等しいので半導体基板への壁面からの熱放射も等しい。By keeping the distance constant, gas injected from the outside can be heated uniformly. Furthermore, since the distances from the wall surface are equal, the heat radiation from the wall surface to the semiconductor substrate is also equal.

このため半導体基板を均一に加熱すゐことかできる。Therefore, the semiconductor substrate can be heated uniformly.

（実施例） 以下、本発明を図面により詳述すると、第１図は本発明
の一実施例を示す。１は発熱体であり、この中心軸には
、第１図（ａ）で示すように断面が長方形の炉心管２が
設けられている。炉心管２内にはボート３がおかれ、こ
の上に多数の半導体基板４が水平に置かれる　（同図由
））。ボート３は、第１図（ａｌから明らかなように、
半導体基板４と炉心管２の壁面との距離が一定になるよ
つ表、形状および位置におかれる。(Example) Hereinafter, the present invention will be described in detail with reference to the drawings. FIG. 1 shows an example of the present invention. Reference numeral 1 denotes a heating element, and a furnace core tube 2 having a rectangular cross section is provided on the central axis of the heating element 1, as shown in FIG. 1(a). A boat 3 is placed inside the reactor core tube 2, and a number of semiconductor substrates 4 are placed horizontally on top of the boat 3 (see figure). Boat 3 is shown in Figure 1 (al.
The semiconductor substrate 4 and the wall surface of the furnace tube 2 are placed in a surface, shape, and position such that the distance between them is constant.

かかる構成により、外部から注入されたガスを均一にあ
たためることができ、基板４への炉心管２の壁面からの
熱放射も等しくなる。この結果、製造された半導体素子
の特性の均一化をはかることができる。With this configuration, the gas injected from the outside can be heated uniformly, and the heat radiation from the wall surface of the furnace tube 2 to the substrate 4 can also be made equal. As a result, the characteristics of the manufactured semiconductor elements can be made uniform.

本発明を断面が長方形の炉心管で説明し、だが、これに
限定されないことは熱論である。Although the present invention will be described with reference to a core tube having a rectangular cross section, it is obvious that the present invention is not limited thereto.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（ａ）は本発明の一実施例を示す横方向の断面図
、第１図（ｂ）はその縦方向の断面図である。 ｌ・・・・・・発熱体、２・・・・・・炉心管、３・・
・・・・ボート、４・・・・・・半導体装置FIG. 1(a) is a horizontal cross-sectional view showing one embodiment of the present invention, and FIG. 1(b) is a vertical cross-sectional view thereof. l... Heating element, 2... Furnace tube, 3...
...Boat, 4...Semiconductor device

Claims (1)

【特許請求の範囲】[Claims] 直方体の炉心管を有することを特徴とする熱処理炉。A heat treatment furnace characterized by having a rectangular parallelepiped furnace core tube.
JP21995883A 1983-11-22 1983-11-22 Heat treatment furnace Pending JPS60111420A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21995883A JPS60111420A (en) 1983-11-22 1983-11-22 Heat treatment furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21995883A JPS60111420A (en) 1983-11-22 1983-11-22 Heat treatment furnace

Publications (1)

Publication Number Publication Date
JPS60111420A true JPS60111420A (en) 1985-06-17

Family

ID=16743699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21995883A Pending JPS60111420A (en) 1983-11-22 1983-11-22 Heat treatment furnace

Country Status (1)

Country Link
JP (1) JPS60111420A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252932A (en) * 1986-04-25 1987-11-04 Matsushita Electric Ind Co Ltd Heat-treating apparatus for semiconductor wafer
JPH0794419A (en) * 1993-09-20 1995-04-07 Hitachi Ltd Semiconductor treating device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252932A (en) * 1986-04-25 1987-11-04 Matsushita Electric Ind Co Ltd Heat-treating apparatus for semiconductor wafer
JPH0794419A (en) * 1993-09-20 1995-04-07 Hitachi Ltd Semiconductor treating device

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