JPS6471152A - Formation of insulating film - Google Patents

Formation of insulating film

Info

Publication number
JPS6471152A
JPS6471152A JP22642887A JP22642887A JPS6471152A JP S6471152 A JPS6471152 A JP S6471152A JP 22642887 A JP22642887 A JP 22642887A JP 22642887 A JP22642887 A JP 22642887A JP S6471152 A JPS6471152 A JP S6471152A
Authority
JP
Japan
Prior art keywords
insulating film
via hole
shaped
onto
layer conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22642887A
Other languages
Japanese (ja)
Inventor
Takumi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22642887A priority Critical patent/JPS6471152A/en
Publication of JPS6471152A publication Critical patent/JPS6471152A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To remove pinholes, and to shorten workhours by forming a via hole through etching, thermally treating an insulating film and burying pinholes in the insulating film with an insulating film material. CONSTITUTION:A via hole 16 is shaped to an inter-layer insulating film 13 between a first layer conductor 12 formed onto a substrate 11 and a second layer conductor 18 shaped onto the first layer conductor 12. An insulating organic material having the melting point or the softening point different from a thermosetting temperature is used as the insulating film 13. The via hole 16 is shaped through etching by employing a photolithographic technique after spin coating and thermosetting onto the substrate 11. The insulating film 13 is thermally treated at a temperature equal to or higher than the melting point or the softening point, and a pinhole 17 in the insulating film 13 is buried with an insulating film 13 material. Accordingly, the pinhole is removed, thus shortening workhours.
JP22642887A 1987-09-11 1987-09-11 Formation of insulating film Pending JPS6471152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22642887A JPS6471152A (en) 1987-09-11 1987-09-11 Formation of insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22642887A JPS6471152A (en) 1987-09-11 1987-09-11 Formation of insulating film

Publications (1)

Publication Number Publication Date
JPS6471152A true JPS6471152A (en) 1989-03-16

Family

ID=16844962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22642887A Pending JPS6471152A (en) 1987-09-11 1987-09-11 Formation of insulating film

Country Status (1)

Country Link
JP (1) JPS6471152A (en)

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