JPS6465862A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6465862A
JPS6465862A JP62223250A JP22325087A JPS6465862A JP S6465862 A JPS6465862 A JP S6465862A JP 62223250 A JP62223250 A JP 62223250A JP 22325087 A JP22325087 A JP 22325087A JP S6465862 A JPS6465862 A JP S6465862A
Authority
JP
Japan
Prior art keywords
groove
film
sio2 film
diameter
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62223250A
Other languages
Japanese (ja)
Other versions
JP2534273B2 (en
Inventor
Masataka Kase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62223250A priority Critical patent/JP2534273B2/en
Publication of JPS6465862A publication Critical patent/JPS6465862A/en
Application granted granted Critical
Publication of JP2534273B2 publication Critical patent/JP2534273B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a groove-type capacitor large enough in capacitance without providing a deep groove by a method wherein a groove is provided, whose diameter in the direction of its depth is larger than the diameter of its opening. CONSTITUTION:A SiO2 film 3 is bored applying a resist mask 4 and a groove 5 is made through a RIE. An SiO2 film 6 and a CVD SiN film 7 are laminated on the inner wall. Resist is buried in the groove 5 and subjected to development controlling the exposure to light rays so as to leave a resist 8 at a lower part. The upper parts of the SiO2 film 6 and the Si3N4 film 7 are removed through etching and then coated with a SiO2 film 3'. A SiO2 film 6' and a Si3N4 film 7' left as the lower part are made to be removed through etching to expose a substrate 1. Next, a trench groove 5' can be obtained through an isotropic etching, whose inner diameter l2 is larger than its diameter l1 at the opening. The inner wall 5' is coated with a SiO2 film 3''', and then a poly-Si layer 9, an insulating film, and a poly-Si opposed electrode layer 11 are formed. By this constitution, a groovetype capacitor large in capacitance can be obtained without making the groove deep.
JP62223250A 1987-09-07 1987-09-07 Semiconductor device Expired - Lifetime JP2534273B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62223250A JP2534273B2 (en) 1987-09-07 1987-09-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62223250A JP2534273B2 (en) 1987-09-07 1987-09-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6465862A true JPS6465862A (en) 1989-03-13
JP2534273B2 JP2534273B2 (en) 1996-09-11

Family

ID=16795152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62223250A Expired - Lifetime JP2534273B2 (en) 1987-09-07 1987-09-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2534273B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449000A2 (en) * 1990-03-08 1991-10-02 Fujitsu Limited Layer structure having contact hole for fin-shaped capacitors in DRAMS and method of producing the same
US5275974A (en) * 1992-07-30 1994-01-04 Northern Telecom Limited Method of forming electrodes for trench capacitors
US5658816A (en) * 1995-02-27 1997-08-19 International Business Machines Corporation Method of making DRAM cell with trench under device for 256 Mb DRAM and beyond
US5692281A (en) * 1995-10-19 1997-12-02 International Business Machines Corporation Method for making a dual trench capacitor structure
EP1071129A2 (en) * 1999-07-22 2001-01-24 Infineon Technologies North America Corp. Crystal-axis-aligned vertical side wall DRAM and process for manufacture thereof
US6194755B1 (en) 1998-06-22 2001-02-27 International Business Machines Corporation Low-resistance salicide fill for trench capacitors
JP2003501834A (en) * 1999-06-09 2003-01-14 インフィニオン テクノロジーズ ノース アメリカ コーポレイション Method of extending trench by anisotropic wet etching

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730363A (en) * 1980-07-03 1982-02-18 Ibm Memory cell
JPS60148165A (en) * 1984-01-13 1985-08-05 Toshiba Corp Manufacture of semiconductor memory device
JPS6132569A (en) * 1984-07-25 1986-02-15 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS6167257A (en) * 1984-09-10 1986-04-07 Toshiba Corp Semiconductor memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730363A (en) * 1980-07-03 1982-02-18 Ibm Memory cell
JPS60148165A (en) * 1984-01-13 1985-08-05 Toshiba Corp Manufacture of semiconductor memory device
JPS6132569A (en) * 1984-07-25 1986-02-15 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS6167257A (en) * 1984-09-10 1986-04-07 Toshiba Corp Semiconductor memory

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449000A2 (en) * 1990-03-08 1991-10-02 Fujitsu Limited Layer structure having contact hole for fin-shaped capacitors in DRAMS and method of producing the same
US5275974A (en) * 1992-07-30 1994-01-04 Northern Telecom Limited Method of forming electrodes for trench capacitors
US5658816A (en) * 1995-02-27 1997-08-19 International Business Machines Corporation Method of making DRAM cell with trench under device for 256 Mb DRAM and beyond
US5692281A (en) * 1995-10-19 1997-12-02 International Business Machines Corporation Method for making a dual trench capacitor structure
US6194755B1 (en) 1998-06-22 2001-02-27 International Business Machines Corporation Low-resistance salicide fill for trench capacitors
JP2003501834A (en) * 1999-06-09 2003-01-14 インフィニオン テクノロジーズ ノース アメリカ コーポレイション Method of extending trench by anisotropic wet etching
EP1071129A2 (en) * 1999-07-22 2001-01-24 Infineon Technologies North America Corp. Crystal-axis-aligned vertical side wall DRAM and process for manufacture thereof

Also Published As

Publication number Publication date
JP2534273B2 (en) 1996-09-11

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