JPS6450569A - Manufacture of polycrystalline silicon thin film transistor - Google Patents
Manufacture of polycrystalline silicon thin film transistorInfo
- Publication number
- JPS6450569A JPS6450569A JP20870287A JP20870287A JPS6450569A JP S6450569 A JPS6450569 A JP S6450569A JP 20870287 A JP20870287 A JP 20870287A JP 20870287 A JP20870287 A JP 20870287A JP S6450569 A JPS6450569 A JP S6450569A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- region
- ion
- silicon
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20870287A JPS6450569A (en) | 1987-08-21 | 1987-08-21 | Manufacture of polycrystalline silicon thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20870287A JPS6450569A (en) | 1987-08-21 | 1987-08-21 | Manufacture of polycrystalline silicon thin film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6450569A true JPS6450569A (en) | 1989-02-27 |
Family
ID=16560663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20870287A Pending JPS6450569A (en) | 1987-08-21 | 1987-08-21 | Manufacture of polycrystalline silicon thin film transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6450569A (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5548132A (en) * | 1994-10-24 | 1996-08-20 | Micron Technology, Inc. | Thin film transistor with large grain size DRW offset region and small grain size source and drain and channel regions |
US6188085B1 (en) | 1993-06-10 | 2001-02-13 | Mitsubishi Denki Kabushiki Kaisha | Thin film transistor and a method of manufacturing thereof |
JP2002222959A (ja) * | 2001-01-29 | 2002-08-09 | Hitachi Ltd | 薄膜半導体装置、多結晶半導体薄膜製造方法及び製造装置 |
US6482686B1 (en) | 1993-08-27 | 2002-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
KR100355938B1 (ko) * | 1993-05-26 | 2002-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
US6528397B1 (en) | 1997-12-17 | 2003-03-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same |
US6608325B1 (en) | 1993-05-26 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device having columnar crystals |
JP2008199041A (ja) * | 2008-03-14 | 2008-08-28 | Hitachi Ltd | 薄膜半導体装置及び薄膜半導体装置を用いた画像表示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62122172A (ja) * | 1985-11-21 | 1987-06-03 | Sony Corp | 半導体装置の製造方法 |
-
1987
- 1987-08-21 JP JP20870287A patent/JPS6450569A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62122172A (ja) * | 1985-11-21 | 1987-06-03 | Sony Corp | 半導体装置の製造方法 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100355938B1 (ko) * | 1993-05-26 | 2002-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
US6608325B1 (en) | 1993-05-26 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device having columnar crystals |
US6188085B1 (en) | 1993-06-10 | 2001-02-13 | Mitsubishi Denki Kabushiki Kaisha | Thin film transistor and a method of manufacturing thereof |
US6255146B1 (en) | 1993-06-10 | 2001-07-03 | Mitsubishi Denki Kabushiki Kaisha | Thin film transistor and a method of manufacturing thereof |
US6482686B1 (en) | 1993-08-27 | 2002-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
US7045819B2 (en) | 1993-08-27 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8133770B2 (en) | 1993-08-27 | 2012-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US6214652B1 (en) | 1994-10-24 | 2001-04-10 | Micron Technology, Inc. | Thin film transistors and method of forming thin film transistors |
US5548132A (en) * | 1994-10-24 | 1996-08-20 | Micron Technology, Inc. | Thin film transistor with large grain size DRW offset region and small grain size source and drain and channel regions |
US6420219B2 (en) | 1994-10-24 | 2002-07-16 | Micron Technology, Inc. | Thin film transistors and method of forming thin film transistors |
US6017782A (en) * | 1994-10-24 | 2000-01-25 | Micron Technology, Inc. | Thin film transistor and method of forming thin film transistors |
US5936262A (en) * | 1994-10-24 | 1999-08-10 | Micron Technology, Inc. | Thin film transistors |
US5904513A (en) * | 1994-10-24 | 1999-05-18 | Micron Technology, Inc. | Method of forming thin film transistors |
US6528397B1 (en) | 1997-12-17 | 2003-03-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same |
US6806498B2 (en) | 1997-12-17 | 2004-10-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same |
JP2002222959A (ja) * | 2001-01-29 | 2002-08-09 | Hitachi Ltd | 薄膜半導体装置、多結晶半導体薄膜製造方法及び製造装置 |
JP2008199041A (ja) * | 2008-03-14 | 2008-08-28 | Hitachi Ltd | 薄膜半導体装置及び薄膜半導体装置を用いた画像表示装置 |
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