JPS6447077A - Protective circuit for power mos field-effect transistor - Google Patents

Protective circuit for power mos field-effect transistor

Info

Publication number
JPS6447077A
JPS6447077A JP62204813A JP20481387A JPS6447077A JP S6447077 A JPS6447077 A JP S6447077A JP 62204813 A JP62204813 A JP 62204813A JP 20481387 A JP20481387 A JP 20481387A JP S6447077 A JPS6447077 A JP S6447077A
Authority
JP
Japan
Prior art keywords
temperature
transistor
mos field
power mos
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62204813A
Other languages
English (en)
Inventor
Shuichi Onabeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP62204813A priority Critical patent/JPS6447077A/ja
Publication of JPS6447077A publication Critical patent/JPS6447077A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Amplifiers (AREA)
JP62204813A 1987-08-18 1987-08-18 Protective circuit for power mos field-effect transistor Pending JPS6447077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62204813A JPS6447077A (en) 1987-08-18 1987-08-18 Protective circuit for power mos field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62204813A JPS6447077A (en) 1987-08-18 1987-08-18 Protective circuit for power mos field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6447077A true JPS6447077A (en) 1989-02-21

Family

ID=16496800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62204813A Pending JPS6447077A (en) 1987-08-18 1987-08-18 Protective circuit for power mos field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6447077A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641024A2 (en) 1993-08-23 1995-03-01 Fuji Electric Co. Ltd. Semiconductor power device
WO1999060628A1 (de) * 1998-05-15 1999-11-25 GKR Gesellschaft für Fahrzeugklimaregelung mbH Power-mos-transistor mit temperaturschutzschaltung
JP2008244595A (ja) * 2007-03-26 2008-10-09 Toshiba Corp 電力増幅器および送受信システム
JP2009289278A (ja) * 2009-08-31 2009-12-10 Toshiba Corp 多値型半導体記憶装置
US8040680B2 (en) 2007-12-27 2011-10-18 Kabushiki Kaisha Toshiba Information processing apparatus and nonvolatile semiconductor storage device
JP2012155760A (ja) * 2012-05-11 2012-08-16 Toshiba Corp 記憶装置及び情報処理装置
JP2013098316A (ja) * 2011-10-31 2013-05-20 Mitsubishi Electric Corp 炭化珪素半導体装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641024A2 (en) 1993-08-23 1995-03-01 Fuji Electric Co. Ltd. Semiconductor power device
EP0641024A3 (en) * 1993-08-23 1995-04-26 Fuji Electric Co Ltd Power semiconductor component.
US5521421A (en) * 1993-08-23 1996-05-28 Fuji Electric Co., Ltd. Semiconductor device
WO1999060628A1 (de) * 1998-05-15 1999-11-25 GKR Gesellschaft für Fahrzeugklimaregelung mbH Power-mos-transistor mit temperaturschutzschaltung
US6671152B1 (en) 1998-05-15 2003-12-30 Gkr Gesellschaft Fur Fahrzeugklimaregelung Mbh Power MOS transistor with overtemperature protection circuit
JP2008244595A (ja) * 2007-03-26 2008-10-09 Toshiba Corp 電力増幅器および送受信システム
US8040680B2 (en) 2007-12-27 2011-10-18 Kabushiki Kaisha Toshiba Information processing apparatus and nonvolatile semiconductor storage device
US8130492B2 (en) 2007-12-27 2012-03-06 Kabushiki Kaisha Toshiba Information processing apparatus and nonvolatile semiconductor storage device
US8760858B2 (en) 2007-12-27 2014-06-24 Kabushiki Kaisha Toshiba Information processing apparatus and nonvolatile semiconductor storage device
JP2009289278A (ja) * 2009-08-31 2009-12-10 Toshiba Corp 多値型半導体記憶装置
JP2013098316A (ja) * 2011-10-31 2013-05-20 Mitsubishi Electric Corp 炭化珪素半導体装置
JP2012155760A (ja) * 2012-05-11 2012-08-16 Toshiba Corp 記憶装置及び情報処理装置

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