JPS56118363A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS56118363A
JPS56118363A JP2120380A JP2120380A JPS56118363A JP S56118363 A JPS56118363 A JP S56118363A JP 2120380 A JP2120380 A JP 2120380A JP 2120380 A JP2120380 A JP 2120380A JP S56118363 A JPS56118363 A JP S56118363A
Authority
JP
Japan
Prior art keywords
region
cell
resistance
minority carriers
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2120380A
Other languages
Japanese (ja)
Other versions
JPS6241421B2 (en
Inventor
Shiyouji Ariizumi
Makoto Segawa
Toshiaki Maiwa
Seiji Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2120380A priority Critical patent/JPS56118363A/en
Priority to US06/235,859 priority patent/US4399520A/en
Priority to DE8181300720T priority patent/DE3167256D1/en
Priority to EP81300720A priority patent/EP0034931B1/en
Publication of JPS56118363A publication Critical patent/JPS56118363A/en
Publication of JPS6241421B2 publication Critical patent/JPS6241421B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To minimize the increase in electric power consumption and make a higher integration advantageous, by setting load at a lower level the resistance value of only the load element existing in the region where the minority carrier reaches. CONSTITUTION:In the peripheral circuit part 32 which controls the memory cell part 31, such part 33 which generates minority carriers as input circuit and self-bias circuit of the substrate etc. are involved. The region A in the cell 31 is near the minority carriers generating part 33, so it is reached by the minority carriers. The value of the resistance of the cell in the region A are all to be R1. On the other hand, the region B connot practically be reached by the minority carriers. The value of the resistance of the cell in the region B are all to be R, and it is fixed that R2> R1. Polycrystalline Si is used for the resistance device. With such an arrangement, the level damage can be prevented and a higher integration can be achieved at the sacrifice of minimum increase in electric power consumption.
JP2120380A 1980-02-22 1980-02-22 Semiconductor integrated circuit Granted JPS56118363A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2120380A JPS56118363A (en) 1980-02-22 1980-02-22 Semiconductor integrated circuit
US06/235,859 US4399520A (en) 1980-02-22 1981-02-19 Semiconductor integrated circuit device
DE8181300720T DE3167256D1 (en) 1980-02-22 1981-02-20 Semiconductor integrated circuit
EP81300720A EP0034931B1 (en) 1980-02-22 1981-02-20 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2120380A JPS56118363A (en) 1980-02-22 1980-02-22 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS56118363A true JPS56118363A (en) 1981-09-17
JPS6241421B2 JPS6241421B2 (en) 1987-09-02

Family

ID=12048415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2120380A Granted JPS56118363A (en) 1980-02-22 1980-02-22 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS56118363A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254652A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254652A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Semiconductor memory device

Also Published As

Publication number Publication date
JPS6241421B2 (en) 1987-09-02

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