JPS647549A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPS647549A
JPS647549A JP16112387A JP16112387A JPS647549A JP S647549 A JPS647549 A JP S647549A JP 16112387 A JP16112387 A JP 16112387A JP 16112387 A JP16112387 A JP 16112387A JP S647549 A JPS647549 A JP S647549A
Authority
JP
Japan
Prior art keywords
design
sic
load resistor
integrated circuit
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16112387A
Other languages
Japanese (ja)
Inventor
Yuji Furumura
Fumitake Mieno
Takaaki Suzuki
Masahiko Toki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16112387A priority Critical patent/JPS647549A/en
Publication of JPS647549A publication Critical patent/JPS647549A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Abstract

PURPOSE:To reduce the area to be occupied by a load resistor and thereby to enhance device integration by a method wherein the load resistor is made of SiC. CONSTITUTION:An integrated circuit of this design is provided with a load resistor built of silicon carbide (SiC), with the beta-SiC, among others, equipped with a band gap energy Eg of 2.2eV, which is higher than that of the conventional resistor silicon which is 1.12eV. In this design, accordingly, a higher resistance may be attained with ease than in a design using polycrystalline silicon, which results in less change in resistance attributable to a rise in temperature. This design reduces the area to be occupied by a resistance body, enhancing device integration.
JP16112387A 1987-06-30 1987-06-30 Integrated circuit Pending JPS647549A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16112387A JPS647549A (en) 1987-06-30 1987-06-30 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16112387A JPS647549A (en) 1987-06-30 1987-06-30 Integrated circuit

Publications (1)

Publication Number Publication Date
JPS647549A true JPS647549A (en) 1989-01-11

Family

ID=15729040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16112387A Pending JPS647549A (en) 1987-06-30 1987-06-30 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS647549A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03160350A (en) * 1989-11-17 1991-07-10 Nippon Zeon Co Ltd Method and apparatus for detecting extraneous substance
US5404047A (en) * 1992-07-17 1995-04-04 Lsi Logic Corporation Semiconductor die having a high density array of composite bond pads
US5801421A (en) * 1995-11-13 1998-09-01 Micron Technology, Inc. Staggered contact placement on CMOS chip
WO2000024043A1 (en) * 1998-10-21 2000-04-27 IHP GMBH Innovations for High Performance Microelectronics Institut für innovative Mikroelektronik Integrated polycrystalline silicon resistance with carbon or germanium

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03160350A (en) * 1989-11-17 1991-07-10 Nippon Zeon Co Ltd Method and apparatus for detecting extraneous substance
US5404047A (en) * 1992-07-17 1995-04-04 Lsi Logic Corporation Semiconductor die having a high density array of composite bond pads
US5801421A (en) * 1995-11-13 1998-09-01 Micron Technology, Inc. Staggered contact placement on CMOS chip
WO2000024043A1 (en) * 1998-10-21 2000-04-27 IHP GMBH Innovations for High Performance Microelectronics Institut für innovative Mikroelektronik Integrated polycrystalline silicon resistance with carbon or germanium

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