JPS647549A - Integrated circuit - Google Patents
Integrated circuitInfo
- Publication number
- JPS647549A JPS647549A JP16112387A JP16112387A JPS647549A JP S647549 A JPS647549 A JP S647549A JP 16112387 A JP16112387 A JP 16112387A JP 16112387 A JP16112387 A JP 16112387A JP S647549 A JPS647549 A JP S647549A
- Authority
- JP
- Japan
- Prior art keywords
- design
- sic
- load resistor
- integrated circuit
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010354 integration Effects 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the area to be occupied by a load resistor and thereby to enhance device integration by a method wherein the load resistor is made of SiC. CONSTITUTION:An integrated circuit of this design is provided with a load resistor built of silicon carbide (SiC), with the beta-SiC, among others, equipped with a band gap energy Eg of 2.2eV, which is higher than that of the conventional resistor silicon which is 1.12eV. In this design, accordingly, a higher resistance may be attained with ease than in a design using polycrystalline silicon, which results in less change in resistance attributable to a rise in temperature. This design reduces the area to be occupied by a resistance body, enhancing device integration.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16112387A JPS647549A (en) | 1987-06-30 | 1987-06-30 | Integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16112387A JPS647549A (en) | 1987-06-30 | 1987-06-30 | Integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS647549A true JPS647549A (en) | 1989-01-11 |
Family
ID=15729040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16112387A Pending JPS647549A (en) | 1987-06-30 | 1987-06-30 | Integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS647549A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03160350A (en) * | 1989-11-17 | 1991-07-10 | Nippon Zeon Co Ltd | Method and apparatus for detecting extraneous substance |
US5404047A (en) * | 1992-07-17 | 1995-04-04 | Lsi Logic Corporation | Semiconductor die having a high density array of composite bond pads |
US5801421A (en) * | 1995-11-13 | 1998-09-01 | Micron Technology, Inc. | Staggered contact placement on CMOS chip |
WO2000024043A1 (en) * | 1998-10-21 | 2000-04-27 | IHP GMBH Innovations for High Performance Microelectronics Institut für innovative Mikroelektronik | Integrated polycrystalline silicon resistance with carbon or germanium |
-
1987
- 1987-06-30 JP JP16112387A patent/JPS647549A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03160350A (en) * | 1989-11-17 | 1991-07-10 | Nippon Zeon Co Ltd | Method and apparatus for detecting extraneous substance |
US5404047A (en) * | 1992-07-17 | 1995-04-04 | Lsi Logic Corporation | Semiconductor die having a high density array of composite bond pads |
US5801421A (en) * | 1995-11-13 | 1998-09-01 | Micron Technology, Inc. | Staggered contact placement on CMOS chip |
WO2000024043A1 (en) * | 1998-10-21 | 2000-04-27 | IHP GMBH Innovations for High Performance Microelectronics Institut für innovative Mikroelektronik | Integrated polycrystalline silicon resistance with carbon or germanium |
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