JPS6425564A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6425564A
JPS6425564A JP62181177A JP18117787A JPS6425564A JP S6425564 A JPS6425564 A JP S6425564A JP 62181177 A JP62181177 A JP 62181177A JP 18117787 A JP18117787 A JP 18117787A JP S6425564 A JPS6425564 A JP S6425564A
Authority
JP
Japan
Prior art keywords
transistor
base region
common collector
region
collector region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62181177A
Other languages
Japanese (ja)
Inventor
Shinichi Hirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62181177A priority Critical patent/JPS6425564A/en
Publication of JPS6425564A publication Critical patent/JPS6425564A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve integration density, by reducing a resistance component between the base region of a second transistor, which is connected in a Darlington pattern, and a common collector region. CONSTITUTION:A base region 3 of a second transistor is arranged around a base region of a first transistor in a ring shape. A common collector region 5 is arranged around the base region 3 of the second transistor in a ring shape. A large current flows through a path from the common collector region 5 to the base region 3 of the second transistor by way of an embedded layer 12 and an epitaxial layer 11. At this time, the distance through the embedded layer 12 becomes equal and minimum for the current passing any part of the common collector region 5. The resistance component from the common collector region 5 to the base region 3 of the second transistor can be made minimum.
JP62181177A 1987-07-22 1987-07-22 Semiconductor device Pending JPS6425564A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62181177A JPS6425564A (en) 1987-07-22 1987-07-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181177A JPS6425564A (en) 1987-07-22 1987-07-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6425564A true JPS6425564A (en) 1989-01-27

Family

ID=16096228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181177A Pending JPS6425564A (en) 1987-07-22 1987-07-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6425564A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033020A (en) * 2003-07-04 2005-02-03 Sanken Electric Co Ltd Semiconductor element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033020A (en) * 2003-07-04 2005-02-03 Sanken Electric Co Ltd Semiconductor element

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