JPS5336487A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5336487A
JPS5336487A JP11149976A JP11149976A JPS5336487A JP S5336487 A JPS5336487 A JP S5336487A JP 11149976 A JP11149976 A JP 11149976A JP 11149976 A JP11149976 A JP 11149976A JP S5336487 A JPS5336487 A JP S5336487A
Authority
JP
Japan
Prior art keywords
semiconductor device
layer
decrease
existing
stored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11149976A
Other languages
Japanese (ja)
Inventor
Teruichiro Tanaka
Shuichi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11149976A priority Critical patent/JPS5336487A/en
Publication of JPS5336487A publication Critical patent/JPS5336487A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Abstract

PURPOSE:A p-type layer is provide to part of n<+> existing at the lower part of the base layer of npn transistor in order to decrease the quantity of the positive hole which is stored to an n-epitaxial layer. Thus, the switching speed is increased for I<2>L.
JP11149976A 1976-09-16 1976-09-16 Semiconductor device Pending JPS5336487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11149976A JPS5336487A (en) 1976-09-16 1976-09-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11149976A JPS5336487A (en) 1976-09-16 1976-09-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5336487A true JPS5336487A (en) 1978-04-04

Family

ID=14562833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11149976A Pending JPS5336487A (en) 1976-09-16 1976-09-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5336487A (en)

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