JPS6442857A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6442857A
JPS6442857A JP20027087A JP20027087A JPS6442857A JP S6442857 A JPS6442857 A JP S6442857A JP 20027087 A JP20027087 A JP 20027087A JP 20027087 A JP20027087 A JP 20027087A JP S6442857 A JPS6442857 A JP S6442857A
Authority
JP
Japan
Prior art keywords
metal
solid
thereabouts
concentration
contained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20027087A
Other languages
English (en)
Inventor
Toshio Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20027087A priority Critical patent/JPS6442857A/ja
Publication of JPS6442857A publication Critical patent/JPS6442857A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP20027087A 1987-08-11 1987-08-11 Semiconductor device Pending JPS6442857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20027087A JPS6442857A (en) 1987-08-11 1987-08-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20027087A JPS6442857A (en) 1987-08-11 1987-08-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6442857A true JPS6442857A (en) 1989-02-15

Family

ID=16421535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20027087A Pending JPS6442857A (en) 1987-08-11 1987-08-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6442857A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02271633A (ja) * 1989-04-13 1990-11-06 Hitachi Ltd 半導体装置の配線層
JPH03182358A (ja) * 1989-12-11 1991-08-08 Canon Inc 記録ヘッド及び記録ヘッド用素子基板
JPH03250627A (ja) * 1990-01-31 1991-11-08 Fujitsu Ltd 半導体装置及びその製造方法
JPH04323871A (ja) * 1991-04-23 1992-11-13 Kobe Steel Ltd 耐熱性に優れた液晶ディスプレイ用配線電極薄膜材料
US5696975A (en) * 1994-09-02 1997-12-09 Compaq Computer Corporation Launching computer applications
WO2000000661A1 (fr) * 1998-06-29 2000-01-06 Kabushiki Kaisha Toshiba Cible de vaporisation
WO2000044047A1 (en) * 1999-01-20 2000-07-27 Infineon Technologies Ag Microelectronic structure
US6206985B1 (en) 1991-03-07 2001-03-27 Kabushiki Kaisha Kobe Seiko Sho A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films
US6882017B2 (en) 1998-08-21 2005-04-19 Micron Technology, Inc. Field effect transistors and integrated circuitry

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02271633A (ja) * 1989-04-13 1990-11-06 Hitachi Ltd 半導体装置の配線層
JPH03182358A (ja) * 1989-12-11 1991-08-08 Canon Inc 記録ヘッド及び記録ヘッド用素子基板
JPH03250627A (ja) * 1990-01-31 1991-11-08 Fujitsu Ltd 半導体装置及びその製造方法
US6206985B1 (en) 1991-03-07 2001-03-27 Kabushiki Kaisha Kobe Seiko Sho A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films
JPH04323871A (ja) * 1991-04-23 1992-11-13 Kobe Steel Ltd 耐熱性に優れた液晶ディスプレイ用配線電極薄膜材料
US5696975A (en) * 1994-09-02 1997-12-09 Compaq Computer Corporation Launching computer applications
WO2000000661A1 (fr) * 1998-06-29 2000-01-06 Kabushiki Kaisha Toshiba Cible de vaporisation
US9437486B2 (en) 1998-06-29 2016-09-06 Kabushiki Kaisha Toshiba Sputtering target
US6882017B2 (en) 1998-08-21 2005-04-19 Micron Technology, Inc. Field effect transistors and integrated circuitry
US6939799B2 (en) 1998-08-21 2005-09-06 Micron Technology, Inc. Method of forming a field effect transistor and methods of forming integrated circuitry
WO2000044047A1 (en) * 1999-01-20 2000-07-27 Infineon Technologies Ag Microelectronic structure

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