JPS57152127A - Fabrication of electrode of semiconductor device - Google Patents

Fabrication of electrode of semiconductor device

Info

Publication number
JPS57152127A
JPS57152127A JP3647281A JP3647281A JPS57152127A JP S57152127 A JPS57152127 A JP S57152127A JP 3647281 A JP3647281 A JP 3647281A JP 3647281 A JP3647281 A JP 3647281A JP S57152127 A JPS57152127 A JP S57152127A
Authority
JP
Japan
Prior art keywords
intermediate layer
grain boundary
electrode
diffusion
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3647281A
Other languages
Japanese (ja)
Inventor
Shuichi Kanamori
Hiroki Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3647281A priority Critical patent/JPS57152127A/en
Publication of JPS57152127A publication Critical patent/JPS57152127A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To achieve fabrication of multilayer electrodes for use in a semiconductor of enhanced stability by a method wherein nitrogen plasma processing work is added after formation of a polycrystalline metal thin film to form a diffusion barrier intermediate layer with less grain boundary diffusion. CONSTITUTION:In a typical section in case of application to a bilayer, for example, a electrode construction, after formation of a film in which Mo or Ti is deposited as a intermediate layer 2 for diffusion barrier use, nitrogen plasma processing is carried out exposing the surface to plasma consisting of a mixture of nitrogen and argon. With this process, a nitride 11 of an intermediate layer metal (Mo or Ti) is selectively formed on the intermediate layer surface and grain boundary. This has a high electronic conductivity and a fine property, so that even if it is formed into grain boudary, any electric trouble does not come up. Therefore, a thermal stability can be improved by suppressing the grain boundary diffusion lowly. After this surface processing work, a metallic thin film 1 is formed and a multilayer electrode can be completed.
JP3647281A 1981-03-16 1981-03-16 Fabrication of electrode of semiconductor device Pending JPS57152127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3647281A JPS57152127A (en) 1981-03-16 1981-03-16 Fabrication of electrode of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3647281A JPS57152127A (en) 1981-03-16 1981-03-16 Fabrication of electrode of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57152127A true JPS57152127A (en) 1982-09-20

Family

ID=12470752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3647281A Pending JPS57152127A (en) 1981-03-16 1981-03-16 Fabrication of electrode of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57152127A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995008839A1 (en) * 1993-09-24 1995-03-30 Vlsi Technology, Inc. Barrier enhancement at the sialicide layer
EP0747502A1 (en) * 1995-06-07 1996-12-11 Applied Materials, Inc. Improved adhesion layer for tungsten deposition
KR100327060B1 (en) * 1998-01-16 2002-08-21 미쓰비시덴키 가부시키가이샤 Electrode for dielectric thin film element and its manufacturing method and ultrasonic vibrator using same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995008839A1 (en) * 1993-09-24 1995-03-30 Vlsi Technology, Inc. Barrier enhancement at the sialicide layer
EP0747502A1 (en) * 1995-06-07 1996-12-11 Applied Materials, Inc. Improved adhesion layer for tungsten deposition
US5725740A (en) * 1995-06-07 1998-03-10 Applied Materials, Inc. Adhesion layer for tungsten deposition
KR100327060B1 (en) * 1998-01-16 2002-08-21 미쓰비시덴키 가부시키가이샤 Electrode for dielectric thin film element and its manufacturing method and ultrasonic vibrator using same

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