JPS644079A - Manufacture of junction type fet - Google Patents
Manufacture of junction type fetInfo
- Publication number
- JPS644079A JPS644079A JP15907487A JP15907487A JPS644079A JP S644079 A JPS644079 A JP S644079A JP 15907487 A JP15907487 A JP 15907487A JP 15907487 A JP15907487 A JP 15907487A JP S644079 A JPS644079 A JP S644079A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- diffusion region
- layer
- type fet
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To make position alignment between a gate electrode and a p<+> diffusion region needless to upgrade integrity, by diffusing p-type impurities from a gate electrode to a semiconductor substrate just under the gate electrode. CONSTITUTION:After a gate electrode 7 is selectively formed on a surface of an (n) layer, ramp annealing is performed to diffuse p-type impurities from the gate electrode 7 to the (n) layer 2 just under the gate electrode 7 so that a p<+> diffusion region 8 is formed. A pn junction is thus formed between the (n) layer 2 and the p<+> diffusion region 8. The p<+> diffusion region 8 of a junction type FET composed in this way is formed with the gate electrode 7 as a diffusion source, and so fine processing can be realized sufficiently according to precision in the processing of the gate electrode 7, and also integrity can be upgraded.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15907487A JPS644079A (en) | 1987-06-26 | 1987-06-26 | Manufacture of junction type fet |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15907487A JPS644079A (en) | 1987-06-26 | 1987-06-26 | Manufacture of junction type fet |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS644079A true JPS644079A (en) | 1989-01-09 |
Family
ID=15685651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15907487A Pending JPS644079A (en) | 1987-06-26 | 1987-06-26 | Manufacture of junction type fet |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS644079A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60220975A (en) * | 1984-04-18 | 1985-11-05 | Toshiba Corp | Gaas field-effect transistor and manufacture thereof |
-
1987
- 1987-06-26 JP JP15907487A patent/JPS644079A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60220975A (en) * | 1984-04-18 | 1985-11-05 | Toshiba Corp | Gaas field-effect transistor and manufacture thereof |
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