JPS6436066A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS6436066A
JPS6436066A JP62190091A JP19009187A JPS6436066A JP S6436066 A JPS6436066 A JP S6436066A JP 62190091 A JP62190091 A JP 62190091A JP 19009187 A JP19009187 A JP 19009187A JP S6436066 A JPS6436066 A JP S6436066A
Authority
JP
Japan
Prior art keywords
metallic electrode
barrier metal
insulation film
electrode
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62190091A
Other languages
Japanese (ja)
Inventor
Toshiaki Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62190091A priority Critical patent/JPS6436066A/en
Publication of JPS6436066A publication Critical patent/JPS6436066A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent a parasitic thyristor effect and to improve reliability in the writing of information and to make a cell formable in high density, by providing a metallic electrode so that a thin insulation film is interposed between a barrier metal and this electrode and next by breaking the thin insulation film to short-circuit the metallic electrode and the barrier metal. CONSTITUTION:An interlayer insulation film 7 is formed on a barrier metal 6, and this film 7 is opened to expose said barrier metal 6. Each memory cell is composed of the barrier metal 6 in contact with a P<+> base region 5, an insulation film 8, and a metallic electrode 9. An N<+> type buried layer 2 and the metallic electrode 9 are composed as word lines and digit lines in each line of memory cells. A voltage of a prescribed value or above is applied between the N<+> type buried layer 2 and the metallic electrode 9 in this cell composition, that is, between the P<+> type base region 5 and the metallic electrode 9, so that the insulation film 8 is broken to short-circuit the barrier metal 6 and the metallic electrode 9 and to write information.
JP62190091A 1987-07-31 1987-07-31 Semiconductor storage device Pending JPS6436066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62190091A JPS6436066A (en) 1987-07-31 1987-07-31 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62190091A JPS6436066A (en) 1987-07-31 1987-07-31 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS6436066A true JPS6436066A (en) 1989-02-07

Family

ID=16252217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62190091A Pending JPS6436066A (en) 1987-07-31 1987-07-31 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6436066A (en)

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