GB1516005A - Semiconductor stores - Google Patents

Semiconductor stores

Info

Publication number
GB1516005A
GB1516005A GB22532/76A GB2253276A GB1516005A GB 1516005 A GB1516005 A GB 1516005A GB 22532/76 A GB22532/76 A GB 22532/76A GB 2253276 A GB2253276 A GB 2253276A GB 1516005 A GB1516005 A GB 1516005A
Authority
GB
United Kingdom
Prior art keywords
storage
transfer
zone
insulating layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB22532/76A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1516005A publication Critical patent/GB1516005A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1516005 Semi-conductor data-storage element SIEMENS AG 10 June 1976 [21 July 1975] 22532/76 Heading H1K In a data store formed in a semi-conductor substrate each storage element, disposed at the intersection of a bit and word address line, consists of an electrically conductive zone formed by diffusion in the substrate and connected to or constituting part of one of its address lines, a storage electrode located over the substrate on an insulating layer and a transfer electrode connected to or forming part of its other address line and disposed on an insulating layer between and overlapping the zone and storage electrode. An outer conductive layer disposed on an insulating layer which extends over the transfer electrode is connected via a hole in the underlying insulation to either the transfer electrode or the zone and constitutes therewith one of the address lines. In the structure shown in Fig. 5 in which the storage and transfer electrodes of two adjacent cells are formed by parts of common polycrystalline silicon layers SK, TE, respectively and the diffused zones are portions of discrete bit lines BL, the outer conductive layer (of metal), connected at KT to the transfer electrodes, constitutes the word line. In an alternative paired cell structure, Fig. 7 the outer conductive layer forms a bit line BLM which is connected to a diffused zone BL common to the cells which have individual transfer and storage electrodes TE, SP.
GB22532/76A 1975-07-21 1976-06-10 Semiconductor stores Expired GB1516005A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2532594A DE2532594B2 (en) 1975-07-21 1975-07-21 Semiconductor memory

Publications (1)

Publication Number Publication Date
GB1516005A true GB1516005A (en) 1978-06-28

Family

ID=5952074

Family Applications (1)

Application Number Title Priority Date Filing Date
GB22532/76A Expired GB1516005A (en) 1975-07-21 1976-06-10 Semiconductor stores

Country Status (5)

Country Link
JP (1) JPS5212584A (en)
DE (1) DE2532594B2 (en)
FR (1) FR2319182A1 (en)
GB (1) GB1516005A (en)
NL (1) NL7607984A (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
JPS6034270B2 (en) * 1976-01-12 1985-08-07 テキサス・インスツルメンツ・インコ−ポレイテツド Semiconductor memory device and its manufacturing method
NL176415C (en) * 1976-07-05 1985-04-01 Hitachi Ltd SEMI-CONDUCTOR MEMORY DEVICE CONTAINING A MATRIX OF SEMI-CONDUCTOR MEMORY CELLS CONSISTING OF A FIELD-EFFECT TRANSISTOR AND A STORAGE CAPACITY.
IT1089299B (en) * 1977-01-26 1985-06-18 Mostek Corp PROCEDURE FOR MANUFACTURING A SEMICONDUCTIVE DEVICE
JPS54159887A (en) * 1978-06-08 1979-12-18 Nec Corp Semiconductor memory device
DE2905506A1 (en) * 1979-02-14 1980-09-04 Bosch Gmbh Robert IGNITION SENSOR, ESPECIALLY IN COMBUSTION ENGINES
DE2935254A1 (en) * 1979-08-31 1981-04-02 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING A MONOLITHIC STATIC STORAGE CELL
DE2935291A1 (en) * 1979-08-31 1981-03-19 Siemens AG, 1000 Berlin und 8000 München MONOLITHIC STATIC STORAGE CELL
EP0033130B1 (en) * 1980-01-25 1986-01-08 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS57210665A (en) * 1981-06-19 1982-12-24 Mitsubishi Electric Corp Semiconductor memory device
DE3138314A1 (en) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München TWO-DIMENSIONAL SEMICONDUCTOR IMAGE SENSOR HIGH PACKING DENSITY WITH PHOTOCONDUCTOR LAYER
DE3138295A1 (en) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München TWO-DIMENSIONAL SEMICONDUCTOR IMAGE SENSOR WITH HIGH PACKING DENSITY
JPS5921168U (en) * 1982-07-30 1984-02-08 三菱電機株式会社 mechanical seal
JP2533070Y2 (en) * 1989-06-14 1997-04-16 株式会社 テーアンテー Slide switch

Also Published As

Publication number Publication date
DE2532594B2 (en) 1980-05-22
NL7607984A (en) 1977-01-25
DE2532594A1 (en) 1977-02-03
FR2319182B3 (en) 1979-03-23
JPS56947B2 (en) 1981-01-10
JPS5212584A (en) 1977-01-31
FR2319182A1 (en) 1977-02-18

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee