JPS6432665A - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- JPS6432665A JPS6432665A JP3322188A JP3322188A JPS6432665A JP S6432665 A JPS6432665 A JP S6432665A JP 3322188 A JP3322188 A JP 3322188A JP 3322188 A JP3322188 A JP 3322188A JP S6432665 A JPS6432665 A JP S6432665A
- Authority
- JP
- Japan
- Prior art keywords
- dummy
- integrated circuit
- substrate
- layer
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 230000001681 protective effect Effects 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the direct and accurate observation of an integrated circuit by laminating the same material as a substrate onto the top face of a substrate, to which the integrated circuit is formed, shaping a dummy-element forming layer and forming a dummy-element not related to the operation of the integrated circuit to the dummy-element forming layer. CONSTITUTION:An integrated circuit 2, pad contact sections 3a, etc., are shaped onto a substrate 1 under the state of a wafer, and the top face of the substrate 1 is coated with an insulating layer 5. Polycrystalline silicon is laminated onto the insulating layer 5, and changed into a single crystal, thus forming a dummy- element forming layer 6. Sections shaped in at least pad regions 8 in the dummy- elemet forming layer 6 are removed, and dummy elements 7 are formed. A resin is attached from the upper section of the dummy-element layer 6 to shape a protective film 4. The insulating layer 5 and the protective film 4 are gotten rid of selectively to form bonding holes 9, and aluminum, etc., are evaporated to shape bonding pads 10. The substrate 1 is cut and changed into a chip, and connected to external wirings through the bonding pads 10, and packaging is conducted.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3322188A JPS6432665A (en) | 1987-04-06 | 1988-02-15 | Integrated circuit device |
| US07/251,768 US4920402A (en) | 1988-02-15 | 1988-10-03 | Integrated circuit device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8622587 | 1987-04-06 | ||
| JP3322188A JPS6432665A (en) | 1987-04-06 | 1988-02-15 | Integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6432665A true JPS6432665A (en) | 1989-02-02 |
Family
ID=26371884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3322188A Pending JPS6432665A (en) | 1987-04-06 | 1988-02-15 | Integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6432665A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175443A (en) * | 1990-02-21 | 1992-12-29 | Sharp Kabushiki Kaisha | Membrane switch |
-
1988
- 1988-02-15 JP JP3322188A patent/JPS6432665A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175443A (en) * | 1990-02-21 | 1992-12-29 | Sharp Kabushiki Kaisha | Membrane switch |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5731166A (en) | Semiconductor device | |
| WO2006063044A3 (en) | Method and device for wafer scale packaging of optical devices using a scribe and break process | |
| JPS5787145A (en) | Semiconductor device | |
| JPS6432665A (en) | Integrated circuit device | |
| JPS55163877A (en) | Semiconductor integrated circuit device | |
| JPS6480038A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS6431443A (en) | Semiconductor device | |
| JPS6442183A (en) | Method of packaging semiconductor device | |
| JPS6473650A (en) | Semiconductor device | |
| JPS5763831A (en) | Semiconductor device | |
| JPS5380182A (en) | Semiconductor device | |
| JPS6482656A (en) | Sealing structure for hybrid integrated circuit | |
| JPS5772338A (en) | Manufacture of semiconductor device | |
| JPS6468935A (en) | Face-down bonding of semiconductor integrated circuit device | |
| JPS54102971A (en) | Semiconductor device | |
| JPS53110371A (en) | Ceramic package type semiconductor device | |
| JPS5736859A (en) | Integrated circuit device | |
| JPS55127029A (en) | Semiconductor device | |
| JPS54160186A (en) | Semiconductor integrated circuit device | |
| JPS5739556A (en) | Ic electrode structure | |
| JPS55103747A (en) | Manufacture of semiconductor device | |
| JPS5679455A (en) | Semiconductor device | |
| JPS5649549A (en) | Semiconductor device | |
| KR970018294A (en) | Semiconductor device to which tape of polymer layer for protective layer is bonded and manufacturing method thereof | |
| JPS5637662A (en) | Semiconductor device |